Kubomi bemihla ngemihla, izixhobo ze-elektroniki ezifana neefowuni eziphathwayo kunye neewatshi ezikrelekrele ziye zaba ngamaqabane abalulekileyo. Ezi zixhobo ziya zisiba buthathaka ngakumbi kodwa zinamandla ngakumbi. Ngaba wakha wazibuza ukuba yintoni ebangela ukuba ziqhubeke zikhula? Impendulo ikwizinto ze-semiconductor, kwaye namhlanje, sigxila kwenye yezona zibalaseleyo phakathi kwazo—ikristale yesafire.
Ikristale yesafire, eyenziwe kakhulu yi-α-Al₂O₃, ineeathom ezintathu zeoksijini kunye neeathom ezimbini zealuminiyam ezidityaniswe ndawonye, zenza isakhiwo se-lattice esinamahexagonal. Nangona ifana nesafire ye-gem-grade ngembonakalo, iikristale zesafire zemizi-mveliso zigxininisa ukusebenza okuphezulu. Njengoko ingasebenzi kakuhle, ayinyibiliki emanzini kwaye imelana nee-asidi kunye nee-alkali, isebenza njenge "ikhaka leekhemikhali" eligcina uzinzo kwiindawo ezinzima. Ukongeza, ibonisa ukucaca okugqwesileyo kwe-optical, ivumela ukuhanjiswa kokukhanya okusebenzayo; ukuqhuba ngamandla kobushushu, ukuthintela ubushushu obugqithisileyo; kunye nokufakelwa kombane okugqwesileyo, okuqinisekisa ukuhanjiswa kwesignali okuzinzileyo ngaphandle kokuvuza. Ngokwemishini, isafire ine-Mohs yobunzima be-9, yesibini emva kwedayimani, eyenza ukuba inganyangeki kakhulu kwaye ingakhukuliseki—ilungele ukusetyenziswa okungafunekiyo.
Isixhobo Esiyimfihlo Ekwenziweni Kweetships
(1) Izinto ezibalulekileyo zeetships zamandla aphantsi
Njengoko i-elektroniki ithambekele ekubeni yi-miniaturization kunye nokusebenza okuphezulu, ii-chips ezinamandla aphantsi ziye zaba yinto ebalulekileyo. Ii-chips zemveli zinengxaki yokuwohloka kwe-insulation kubukhulu be-nanoscale, nto leyo ekhokelela ekuvuzeni kwamanzi, ukusetyenziswa kwamandla okwandileyo, kunye nokushisa kakhulu, nto leyo ebeka emngciphekweni uzinzo kunye nobomi bomntu.
Abaphandi kwiShanghai Institute of Microsystem and Information Technology (SIMIT), iChinese Academy of Sciences, baphuhlise ii-wafers ze-dielectric ze-sapphire ezenziweyo besebenzisa itekhnoloji ye-oxidation yesinyithi, beguqula i-aluminium yekristale enye ibe yi-alumina yekristale enye (isafire). Kubukhulu be-1 nm, le nto ibonisa ukuvuza okuphantsi kakhulu, iphumelela ngaphezu kwee-dielectrics eziqhelekileyo ezingaqhelekanga nge-oda ezimbini zobukhulu ekunciphiseni uxinano lwelizwe kunye nokuphucula umgangatho we-interface ngee-semiconductors ze-2D. Ukudibanisa oku nezinto ze-2D kwenza ii-chips ezinamandla aphantsi, kwandise kakhulu ubomi bebhetri kwiifowuni eziphathwayo kwaye kuphucula uzinzo kwizicelo ze-AI kunye ne-IoT.
(2) Iqabane Eligqibeleleyo leGallium Nitride (GaN)
Kwicandelo le-semiconductor, i-gallium nitride (GaN) ivele njengeenkwenkwezi ezikhazimlayo ngenxa yeenzuzo zayo ezikhethekileyo. Njengesixhobo se-semiconductor esine-bandgap ebanzi ene-bandgap ye-3.4 eV—enkulu kakhulu kune-silicon's 1.1 eV—i-GaN igqwesile kwizicelo zobushushu obuphezulu, i-voltage ephezulu, kunye ne-frequency ephezulu. Ukuhamba kwayo okuphezulu kwe-electron kunye namandla entsimi okuqhekeka okubalulekileyo kwenza ukuba ibe yinto efanelekileyo kwizixhobo ze-elektroniki ezinamandla aphezulu, obushushu obuphezulu, i-frequency ephezulu, kunye nokukhanya okuphezulu. Kwizixhobo ze-elektroniki zamandla, izixhobo ezisekwe kwi-GaN zisebenza kwi-frequency ephezulu kunye nokusetyenziswa kwamandla okuphantsi, okubonelela ngokusebenza okuphezulu ekuguqulweni kwamandla kunye nolawulo lwamandla. Kwi-microwave communications, i-GaN ivumela izixhobo zamandla aphezulu, i-frequency ephezulu ezifana nee-amplifier zamandla ze-5G, ukuphucula umgangatho wokudluliselwa kwesignali kunye nozinzo.
Ikristale yesafire ithathwa njenge "qabane elifanelekileyo" leGaN. Nangona ukungafani kwayo kwelattice neGaN kuphezulu kune-silicon carbide (SiC), ii-substrates zesafire zibonisa ukungafani okuphantsi kobushushu ngexesha le-epitaxy yeGaN, zibonelela ngesiseko esizinzileyo sokukhula kweGaN. Ukongeza, ukuqhuba kakuhle kobushushu besafire kunye nokucaca kwe-optical kwenza kube lula ukusasazwa kobushushu ngokufanelekileyo kwizixhobo zeGaN ezinamandla aphezulu, kuqinisekisa uzinzo lokusebenza kunye nokusebenza kakuhle kokukhanya okuphumayo. Iimpawu zayo zokufakelwa kombane ezibalaseleyo zinciphisa ngakumbi ukuphazamiseka kwesignali kunye nokulahleka kwamandla. Ukudibana kwesafire kunye neGaN kukhokelele ekuphuhlisweni kwezixhobo ezisebenza kakhulu, kubandakanya ii-LED ezisekwe kwiGaN, ezilawula iimarike zokukhanyisa kunye neziboniso - ukusuka kwiibhalbhu ze-LED zasekhaya ukuya kwizikrini ezinkulu zangaphandle - kunye nee-laser diodes ezisetyenziswa kunxibelelwano lwe-optical kunye nokucubungula i-laser ngokuchanekileyo.
I-wafer ye-XKH yeGaN-on-sapphire
Ukwandisa iMida yeZicelo zeSemiconductor
(1) “Ikhaka” kwizicelo zoMkhosi nezeeNqwelo-moya
Izixhobo ezisetyenziswa emkhosini nakwi-aerospace zihlala zisebenza phantsi kweemeko ezinzima kakhulu. Esibhakabhakeni, iinqanawa zinyamezela amaqondo obushushu aphantse abe yi-zero, imitha enamandla ye-cosmic, kunye nemingeni yendawo engenamoya. Iinqwelo-moya zomkhosi, okwangoku, zijongene namaqondo obushushu angaphezulu kwe-1,000°C ngenxa yokufudumeza kwe-aerodynamic ngexesha lokubhabha ngesantya esiphezulu, kunye nemithwalo ephezulu yoomatshini kunye nokuphazamiseka kwe-electromagnetic.
Iimpawu ezikhethekileyo zekristale yesafire ziyenza ibe yinto efanelekileyo kwizinto ezibalulekileyo kwezi ndawo. Ukumelana kwayo okugqwesileyo nobushushu obuphezulu—ukumelana ukuya kuthi ga kwi-2,045°C ngelixa igcina ukuqina kwesakhiwo—kuqinisekisa ukusebenza okuthembekileyo phantsi koxinzelelo lobushushu. Ubulukhuni bayo bemitha bukwagcina ukusebenza kwiindawo zendalo kunye nezenyukliya, bukhusela ngempumelelo izixhobo ze-elektroniki ezinobuthathaka. Ezi mpawu zikhokelele ekusetyenzisweni ngokubanzi kwesafire kwiifestile ze-infrared (IR) ezinobushushu obuphezulu. Kwiinkqubo zokhokelo lwe-missile, iifestile ze-IR kufuneka zigcine ukucaca kwe-optical phantsi kobushushu obuphezulu kunye nesantya ukuqinisekisa ukufunyanwa ngokuchanekileyo kwethagethi. Iifestile ze-IR ezisekelwe kwisafire zidibanisa uzinzo oluphezulu lobushushu kunye nokudluliselwa kwe-IR okuphezulu, okuphucula kakhulu ukuchaneka kwesikhokelo. Kwi-aerospace, isafire ikhusela iinkqubo ze-optical zesathelayithi, ivumela ukufota okucacileyo kwiimeko ezinzima ze-orbital.
Ii-XKHiifestile zesafire ezibonakalayo
(2) Isiseko esitsha seeSuperconductors kunye neeMicroelectronics
Kwi-superconductivity, i-sapphire isebenza njengesiseko esibalulekileyo kwiifilimu ezincinci eziqhuba i-superconducting, ezenza ukuba i-conduction ingaxhathisi—iguqula ukuhanjiswa kwamandla, oololiwe be-maglev, kunye neenkqubo ze-MRI. Iifilimu eziqhuba i-superconducting eziphezulu zifuna ii-substrates ezinezakhiwo ze-lattice ezizinzileyo, kwaye ukuhambelana kwe-sapphire nezinto ezifana ne-magnesium diboride (MgB₂) kuvumela ukukhula kweefilimu ezinoxinano oluphuculweyo lwangoku kunye ne-magnetic field ebalulekileyo. Umzekelo, iintambo zamandla ezisebenzisa iifilimu eziqhuba i-sapphire ezixhaswa yi-sapphire ziphucula kakhulu ukusebenza kakuhle kokudluliselwa ngokunciphisa ukulahleka kwamandla.
Kwi-microelectronics, ii-substrates ze-sapphire ezine-orientation ethile ye-crystallographic—ezifana ne-R-plane (<1-102>) kunye ne-A-plane (<11-20>)—zivumela ii-silicon epitaxial layers ezilungiselelwe ii-advanced integrated circuits (ICs). I-R-plane sapphire inciphisa iziphene ze-crystal kwii-IC ezikhawulezayo, inyusa isantya sokusebenza kunye nozinzo, ngelixa ii-insulating ze-A-plane sapphire kunye ne-uniform permittivity ziphucula i-hybrid microelectronics kunye nokuhlanganiswa kwe-superconductor yobushushu obuphezulu. Ezi substrates zixhasa ii-core chips kwi-high-performance computing kunye ne-telecommunication infrastructure.
XKH'sAIsitya se-lN-on-NPSS
Ikamva leSapphire Crystal kwiSemiconductors
I-Sapphire sele ibonakalise ixabiso elikhulu kuzo zonke ii-semiconductors, ukusuka ekwenziweni kwee-chip ukuya kwi-aerospace kunye nee-superconductors. Njengoko iteknoloji iqhubela phambili, indima yayo iya kwanda ngakumbi. Kwi-artificial intelligence, ii-sapphire ezixhaswa yi-sapphire eziphantsi, ezisebenza kakuhle ziya kuqhuba uphuhliso lwe-AI kwezempilo, ezothutho, kunye nezemali. Kwi-quantum computing, iipropati zezinto ze-sapphire ziyibeka njengomviwa othembisayo wokuhlanganiswa kwe-qubit. Okwangoku, izixhobo ze-GaN-on-sapphire ziya kuhlangabezana neemfuno ezikhulayo zezixhobo zonxibelelwano ze-5G/6G. Ukuya phambili, i-sapphire iya kuhlala ilitye lesiseko lokuvelisa izinto ezintsha ze-semiconductor, inika amandla inkqubela phambili yetekhnoloji yoluntu.
I-wafer ye-epitaxial ye-XKH yeGaN-on-sapphire
I-XKH ibonelela ngeefestile ze-sapphire optical ezicwangciswe ngokuchanekileyo kunye nezisombululo ze-GaN-on-sapphire wafer kwizicelo ezisemgangathweni. Sisebenzisa ubuchwepheshe bokukhulisa iikristale obukhethekileyo kunye nobuchwepheshe bokupholisha obuncinci, sibonelela ngeefestile ze-sapphire ezithe tyaba kakhulu ezinokudluliselwa okugqwesileyo ukusuka kwi-UV ukuya kwi-IR spectra, ezifanelekileyo kwiinkqubo ze-aerospace, zokhuselo, kunye ne-laser enamandla aphezulu.
Ixesha leposi: Epreli-18-2025