Kubomi bemihla ngemihla, izixhobo zombane ezinjengee-smartphones kunye neewotshi ezihlakaniphile ziye zaba ngamaqabane ayimfuneko. Ezi zixhobo ziya zincinci ngakumbi kodwa zinamandla ngakumbi. Ngaba wakha wazibuza ukuba yintoni eyenza indaleko yabo iqhubeke? Impendulo ifumaneka kwizinto eziphathekayo ze-semiconductor, kwaye namhlanje, sigxininisa enye yezona zinto zibalaseleyo phakathi kwazo-ikristale yesafire.
Ikristale yeSapphire, eyona nto yenziwa yi-α-Al₂O₃, ineeathom ezintathu zeoksijini kunye neeathom ezimbini ze-aluminiyam ezidityaniswe ngokudibeneyo, zenza ulwakhiwo lweletisi enehexagonal. Ngelixa ifana nesafire yebakala elinqabileyo ngenkangeleko, iikristale zesafire yeshishini zigxininisa ukusebenza okuphezulu. I-inert ye-Chemical, ayinyibiliki emanzini kwaye iyamelana ne-acids kunye ne-alkalis, isebenza "njengekhaka lekhemikhali" eligcina uzinzo kwiindawo ezinzima. Ukongeza, ibonisa ukukhanya okucacileyo okugqwesileyo, ukuvumela ukuhanjiswa kokukhanya okusebenzayo; i-thermal conductivity enamandla, ukukhusela ukushisa okukhulu; kunye nokufakelwa kombane okubalaseleyo, ukuqinisekisa ukuhanjiswa komqondiso okuzinzileyo ngaphandle kokuvuza. Ngomatshini, isafire iqhayisa ubulukhuni be-Mohs be-9, okwesibini kuphela kwidayimane, iyenza inxibe kakhulu- kunye ne-rosion-resistant-ilungele ukufunwa kwezicelo.
Isixhobo esiyimfihlo kwi-Chip Manufacturing
(1) Izinto eziPhambili kwiiChips eziphantsi kwamandla
Njengomkhwa we-elektroniki ukuya kwi-miniaturization kunye nokusebenza okuphezulu, iitshiphusi zamandla aphantsi ziye zabaluleka. Iichips zesiNtu zithwaxwa kukuwohloka kwe-insulation kubukhulu be-nanoscale, okukhokelela ekuvuzeni kwangoku, ukonyuka kokusetyenziswa kwamandla, kunye nobushushu obugqithisileyo, obubeka esichengeni uzinzo kunye nobomi.
Abaphandi kwi-Shanghai Institute of Microsystem kunye neTeknoloji yoLwazi (i-SIMIT), i-Chinese Academy of Sciences, baphuhlise i-sapphire dielectric wafers eyenziwe nge-metal-intercalated oxidation technology, ukuguqula i-aluminium ye-crystal enye ibe yi-crystal-crystal alumina (isafire). Kwi-1 nm ubukhulu, le nto ibonisa ukuvuza okuphantsi kwe-ultra-low, i-dielectrics ye-amorphous eqhelekileyo ye-amorphous ngemiyalelo emibini yobukhulu ekunciphiseni ubuninzi belizwe kunye nokuphucula umgangatho wojongano kunye ne-semiconductors ye-2D. Ukudibanisa oku kunye nezixhobo ze-2D kwenza iitshiphusi ezinamandla aphantsi, zandisa kakhulu ubomi bebhetri kwii-smartphones kunye nokuphucula uzinzo kwizicelo ze-AI kunye ne-IoT.
(2) Iqabane eligqibeleleyo leGallium Nitride (GaN)
Kwintsimi ye-semiconductor, i-gallium nitride (i-GaN) iye yavela njengenkwenkwezi ekhanyayo ngenxa yeenzuzo zayo ezizodwa. Njengesixhobo semiconductor ye-wide-bandgap ene-bandgap ye-3.4 eV-inkulu kakhulu kune-silicon's 1.1 eV-i-GaN igqwesa kwi-high-temperature, i-high-voltage, kunye ne-high-frequency applications. Ukuhamba kwayo kwe-electron ephezulu kunye namandla okuphuka okubalulekileyo kwintsimi kwenza kube yinto efanelekileyo kumandla aphezulu, ubushushu obuphezulu, i-high-frequency, kunye nezixhobo zombane ezikhanyayo. Kwi-electronics yamandla, izixhobo ezisekelwe kwi-GaN zisebenza kwiifrikhwensi eziphezulu kunye nokusetyenziswa kwamandla aphantsi, kunika ukusebenza okuphezulu ekuguquleni amandla kunye nokulawula amandla. Kunxibelelwano lwe-microwave, i-GaN inika amandla amandla aphezulu, amacandelo aphezulu-frequency afana ne-5G amplifiers, ephucula umgangatho wokuhanjiswa komqondiso kunye nokuzinza.
Ikristale yeSapphire ithathwa “njengeqabane eligqibeleleyo” leGaN. Nangona i-lattice engafaniyo ne-GaN iphezulu kune-silicon carbide (SiC), i-sapphire substrates ibonisa ukungahambi kakuhle kwe-thermal ngexesha le-GaN epitaxy, inika isiseko esizinzile sokukhula kwe-GaN. Ukongeza, eyona ndlela ibalaseleyo yokufudumeza kwesafire kunye nokucaca okubonakalayo kuququzelela ukuchithwa kobushushu okusebenzayo kwizixhobo ezinamandla kakhulu ze-GaN, iqinisekisa uzinzo lokusebenza kunye nokusebenza kakuhle kokukhanya. Iimpawu zayo eziphezulu zokugquma umbane zinciphisa ngakumbi ukuphazamiseka komqondiso kunye nokulahlekelwa kwamandla. Ukudibanisa kwesafire kunye ne-GaN kuye kwakhokelela ekuphuhlisweni kwezixhobo zokusebenza eziphezulu, kubandakanywa ii-LED ezisekelwe kwi-GaN, ezilawula ukukhanya kunye nokubonisa iimarike-ukusuka kwii-bulb ze-LED zendlu ukuya kwizikrini ezinkulu zangaphandle-kunye ne-laser diode esetyenziselwa unxibelelwano lwe-optical kunye nokulungiswa kwe-laser ngokuchanekileyo.
I-XKH's GaN-on-sapphire wafer
Ukwandiswa kweMida yezicelo zeSemiconductor
(1) I-“Shield” kwi-Military and Aerospace Applications
Izixhobo kwizicelo zomkhosi kunye ne-aerospace zihlala zisebenza phantsi kweemeko ezinzima. Emajukujukwini, iziphekepheke zinyamezela amaqondo obushushu aphantse abe ngu-zero, imitha yemitha ye-cosmic enamandla, kunye nocelomngeni lwemekobume engenanto. Iinqwelomoya zomkhosi, okwangoku, zijongana namaqondo obushushu angaphezulu kwe-1,000 ° C ngenxa yokufudumeza kwe-aerodynamic ngexesha lokubhabha ngesantya esiphezulu, kunye nemithwalo ephezulu yomatshini kunye nokuphazamiseka kombane.
Iipropathi ezikhethekileyo zekristale yeSapphire zenza ukuba ibe yimathiriyeli efanelekileyo kumacandelo abalulekileyo kula macandelo. Ukuchasana kwayo okungaqhelekanga kwiqondo lokushisa eliphezulu-ukumelana ne-2,045 ° C ngelixa igcina ingqibelelo yesakhiwo-iqinisekisa ukusebenza okuthembekileyo phantsi koxinzelelo lwe-thermal. Ukuqina kwayo ngemitha kwakhona kugcina ukusebenza kwimekobume yecosmic neyenyukliya, ngokufanelekileyo ikhusela izixhobo zombane ezibuthathaka. Ezi mpawu zikhokelele ekusetyenzisweni ngokubanzi kwesafire kwiifestile ze-infrared (IR) ezinobushushu obuphezulu. Kwiinkqubo zesikhokelo somjukujelwa, iifestile ze-IR kufuneka zigcine ukucaca kwe-optical phantsi kobushushu obugqithisileyo kunye nesantya sokuqinisekisa ukufunyanwa okuchanekileyo. Iifestile ze-IR ezisekelwe kwiSapphire zidibanisa ukuzinza okuphezulu kwe-thermal kunye nokuhanjiswa kwe-IR ephezulu, ukuphucula kakhulu ukuchaneka kwesikhokelo. Kwi-aerospace, isafire ikhusela iisistim zesathelayithi zamehlo, ivumela umfanekiso ocacileyo kwiimeko ezinzima ze-orbital.
IiXKH'siifestile zamehlo esafire
(2) ISiseko esitsha seSuperconductors kunye neMicroelectronics
Kwi-superconductivity, isafire isebenza njengeyona ndawo ibalulekileyo yokwenziwa kweefilimu ezicekethekileyo, ezenza ukuba i-zero-resistance conduction-revolutioning power transmission, i-maglev trains, kunye ne-MRI systems. Iifilimu ezisebenza kakhulu ezikumgangatho ophezulu zifuna i-substrates ezinezakhiwo ezizinzileyo zelathisi, kunye nokuhambelana kwesafire kunye nezixhobo ezifana ne-magnesium diboride (MgB₂) ivumela ukukhula kweefilimu ezinoxinano olubalulekileyo lwangoku kunye nemagnethi ebalulekileyo. Umzekelo, iintambo zamandla ezisebenzisa iifilim ezixhaswa ngesafire eziphucukileyo ziphucula ngokumangalisayo ukuhanjiswa ngokunciphisa ukulahleka kwamandla.
Kwi-microelectronics, i-sapphire substrates ene-crystallographic orientations ethile-efana ne-R-plane (<1-102>) kunye ne-A-plane (<11-20>)-yenza i-silicone epitaxial layers isebenze kwiisekethe eziphambili ezidibeneyo (ICs). I-R-plane yesafire inciphisa iziphene ze-crystal kwi-ICs ezikhawulezayo, ukunyusa isantya sokusebenza kunye nokuzinza, ngelixa iipropati zokukhusela i-A-plane ye-sapphire kunye nemvume efanayo yenze ngcono i-microelectronics ye-hybrid kunye nokushisa okuphezulu kwe-superconductor integration. Ezi substrates zixhasa ii-chips ezingundoqo kwi-high-performance computing kunye neziseko zonxibelelwano lomnxeba.
XKH'sAI-lN-on-NPSS Wafer
Ikamva leCrystal yeSapphire kwiiSemiconductors
ISapphire sele ibonise ixabiso elikhulu kuzo zonke ii-semiconductors, ukusuka kulwakhiwo lwetshiphu ukuya kwi-aerospace kunye nee-superconductors. Njengoko iteknoloji ihambela phambili, indima yayo iya kwanda ngakumbi. Kubukrelekrele bokwenziwa, isafire exhaswa ngamandla aphantsi, iichips ezisebenza kakhulu ziya kuqhuba ukuqhubela phambili kwe-AI kukhathalelo lwempilo, uthutho, kunye nezezimali. Kwicomputing yobungakanani, iipropathi zezinto zesafire ziyibeka njengomgqatswa othembisayo wodibaniso lwequbit. Okwangoku, izixhobo ze-GaN-on-sapphire ziya kuhlangabezana neemfuno ezikhulayo ze-5G / 6G yonxibelelwano lwe-hardware. Ukuqhubela phambili, isafire iya kuhlala ililitye lembombo le-semiconductor innovation, inika amandla inkqubela phambili yetekhnoloji yoluntu.
XKH's GaN-on-sapphire epitaxial wafer
I-XKH ihambisa iifestile zesafire ezichanekileyo ezenziwe ngobunjineli kunye ne-GaN-on-sapphire izisombululo ze-wafer ze-cutting-edge applications. Ukusebenzisa ukukhula kwekristale yobunini kunye nobuchwepheshe bokupholishwa kwe-nanoscale, sibonelela ngeefestile zesafire ezithe tyaba ezinokuhanjiswa okukhethekileyo ukusuka kwi-UV ukuya kwi-IR spectra, ilungele i-aerospace, ukhuselo, kunye neenkqubo zelaser ezinamandla kakhulu.
Ixesha lokuposa: Apr-18-2025