Kwinkqubo yophuhliso olukhulayo lweshishini le-semiconductor, ikristale enye ekhazimlisiweyoiiwafer zesiliconzidlala indima ebalulekileyo. Zisebenza njengezixhobo ezisisiseko zokuvelisa izixhobo ezahlukeneyo ze-microelectronic. Ukusuka kwiisekethe ezidibeneyo ezintsonkothileyo nezichanekileyo ukuya kwii-microprocessors ezikhawulezayo kunye nee-sensors ezisebenzayo ezininzi, i-crystal enye epholisiweyoiiwafer zesiliconzibalulekile. Umahluko ekusebenzeni kwazo kunye neenkcukacha zazo uchaphazela ngqo umgangatho kunye nokusebenza kweemveliso zokugqibela. Apha ngezantsi kukho iinkcukacha eziqhelekileyo kunye neeparameter ze-wafers ze-silicon ezipholisiweyo ze-single crystal:

Ububanzi: Ubungakanani bee-wafers ze-silicon ezine-semiconductor single crystal bulinganiswa ngobubanzi bazo, kwaye ziza ngeendlela ezahlukeneyo. Ii-diameters eziqhelekileyo ziquka ii-intshi ezi-2 (50.8mm), ii-intshi ezi-3 (76.2mm), ii-intshi ezi-4 (100mm), ii-intshi ezi-5 (125mm), ii-intshi ezi-6 (150mm), ii-intshi ezi-8 (200mm), ii-intshi ezili-12 (300mm), kunye nee-intshi ezili-18 (450mm). Ii-diameters ezahlukeneyo zilungele iimfuno ezahlukeneyo zemveliso kunye neemfuno zenkqubo. Umzekelo, ii-wafers ezincinci zisetyenziswa kakhulu kwizixhobo ezikhethekileyo, ezincinci ze-microelectronic, ngelixa ii-wafers ezinkulu zibonisa ukusebenza kakuhle kwemveliso kunye neenzuzo zeendleko ekuvelisweni kweesekethe ezihlanganisiweyo ezinkulu. Iimfuno zomphezulu zihlulwe njenge-single-side polished (SSP) kunye ne-double-side polished (DSP). Ii-wafers ezipolishiweyo zecala elinye zisetyenziselwa izixhobo ezifuna ukuba tyaba kakhulu kwelinye icala, njengee-sensors ezithile. Ii-wafers ezipolishiweyo zecala elinye zihlala zisetyenziswa kwiisekethe ezidibeneyo kunye nezinye iimveliso ezifuna ukuchaneka okuphezulu kuzo zombini iindawo. Imfuneko Yomphezulu (Ukugqiba): I-SSP epholisiweyo enecala elinye / I-DSP epholisiweyo enecala elinye.

Uhlobo/I-Dopant: (1) I-N-type Semiconductor: Xa ii-athomu ezithile zokungcola zingeniswa kwi-intrinsic semiconductor, zitshintsha i-conductivity yayo. Umzekelo, xa kongezwa izinto ze-pentavalent ezifana ne-nitrogen (N), i-phosphorus (P), i-arsenic (As), okanye i-antimony (Sb), ii-valence electrons zazo zenza ii-covalent bonds kunye nee-valence electrons zee-athomu ze-silicon ezijikelezileyo, zishiya i-electron eyongezelelweyo ingabotshelelwanga yi-covalent bond. Oku kubangela ukuba i-electron concentration ibe nkulu kune-hole concentration, yenze i-N-type semiconductor, eyaziwa ngokuba yi-electron-type semiconductor. Ii-N-type semiconductors zibalulekile kwizixhobo zokwenza ezifuna ii-electron njengee-charge carriers eziphambili, njengezixhobo ezithile zamandla. (2) I-P-type Semiconductor: Xa izinto ze-trivalent uncleansing ezifana ne-boron (B), i-gallium (Ga), okanye i-indium (In) zingeniswa kwi-silicon semiconductor, ii-valence electrons zee-athomu zokungcola zenza ii-covalent bonds kunye nee-athomu ze-silicon ezijikelezileyo, kodwa azinazo ubuncinane i-valence electron enye kwaye azinakwenza i-covalent bond epheleleyo. Oku kukhokelela ekuxinaniseni kwemingxuma okungaphezulu koxinaniselwano lwee-electron, nto leyo eyenza i-semiconductor yohlobo lwe-P, eyaziwa ngokuba yi-semiconductor yohlobo lwemingxuma. Ii-semiconductor zohlobo lwe-P zidlala indima ebalulekileyo ekuveliseni izixhobo apho imingxunya isebenza njengeenkampani eziphambili zokutshaja, ezifana nee-diode kunye nee-transistors ezithile.

Ukumelana: Ukumelana yinxalenye ebalulekileyo ebonakalayo elinganisa umbane wee-wafers ze-silicon ezikhazimlisiweyo zekristale enye. Ixabiso layo libonisa ukusebenza kombane wezinto. Okukhona umbane uphantsi, kokukhona umbane we-wafer ye-silicon ungcono; ngokuchaseneyo, kokukhona umbane uphezulu, kokukhona umbane uphantsi. Ukumelana kwee-wafers ze-silicon kuxhomekeka kwiimpawu zazo zezinto, kwaye ubushushu bunempembelelo enkulu. Ngokubanzi, ukumelana kwee-wafers ze-silicon kuyanda ngobushushu. Kwizicelo ezisebenzayo, izixhobo ezahlukeneyo ze-microelectronic zinemfuno ezahlukeneyo zokumelana kwii-wafers ze-silicon. Umzekelo, ii-wafers ezisetyenziswa kwimveliso yesekethe edibeneyo zifuna ulawulo oluchanekileyo lokumelana ukuqinisekisa ukusebenza kwesixhobo okuzinzileyo nokuthembekileyo.

Ulwalathiso: Indlela esekwe ngayo ikristale yewafer imele indlela esekwe ngayo ikristale yelatisi yesilicon, edla ngokuchazwa zii-Miller indices ezifana ne (100), (110), (111), njl. Iindlela ezahlukeneyo zekristale zineempawu ezahlukeneyo zomzimba, ezifana noxinano lomgca, oluyahluka ngokusekwe kwindlela esekwe ngayo. Lo mahluko unokuchaphazela ukusebenza kwewafer kumanyathelo okucubungula alandelayo kunye nokusebenza kokugqibela kwezixhobo ze-microelectronic. Kwinkqubo yokuvelisa, ukukhetha iwafer yesilicon enolwalathiso olufanelekileyo kwiimfuno ezahlukeneyo zesixhobo kunokuphucula ukusebenza kwesixhobo, kuphucule ukusebenza kakuhle kwemveliso, kwaye kuphucule umgangatho wemveliso.

Iflethi/Inotshi: Umphetho othe tyaba (iFlat) okanye i-V-notch (iNotshi) kumjikelezo we-silicon wafer idlala indima ebalulekileyo ekulungelelanisweni kwekristale kwaye iyinto ebalulekileyo ekuchongeni nasekusebenzeni kwe-wafer. Ii-wafers ezinobubanzi obahlukeneyo zihambelana nemigangatho eyahlukeneyo yobude beFlat okanye iNotshi. Imiphetho yokulungelelanisa yahlulwe ngokwe-flat yokuqala kunye ne-flat yesibini. Iflethi yokuqala isetyenziselwa ikakhulu ukumisela ukujongwa kwekristale esisiseko kunye nesalathiso sokucubungula se-wafer, ngelixa iflethi yesibini inceda ngakumbi ekulungelelanisweni nasekusebenzeni ngokuchanekileyo, ukuqinisekisa ukusebenza ngokuchanekileyo kunye nokuhambelana kwe-wafer kuyo yonke imigca yemveliso.

Ubukhulu: Ubukhulu be-wafer budla ngokubalulwa kwii-micrometer (μm), kwaye ubukhulu obuqhelekileyo buphakathi kwe-100μm kunye ne-1000μm. Ii-wafer ezinobukhulu obahlukeneyo zifanelekile kwiintlobo ezahlukeneyo zezixhobo ze-microelectronic. Ii-wafer ezincinci (umz., 100μm – 300μm) zihlala zisetyenziselwa ukwenza ii-chip ezifuna ulawulo oluqinileyo lobukhulu, ukunciphisa ubungakanani kunye nobunzima be-chip kunye nokunyusa uxinano lokudibanisa. Ii-wafer ezinkulu (umz., 500μm – 1000μm) zisetyenziswa kakhulu kwizixhobo ezifuna amandla aphezulu oomatshini, njengezixhobo ze-semiconductor zamandla, ukuqinisekisa uzinzo ngexesha lokusebenza.

Uburhabaxa bomphezulu: Uburhabaxa bomphezulu yenye yeeparameter eziphambili zokuvavanya umgangatho we-wafer, njengoko ichaphazela ngokuthe ngqo ukunamathelana phakathi kwe-wafer kunye nezixhobo zefilimu ezincinci ezifakwe emva koko, kunye nokusebenza kombane kwesixhobo. Ihlala ichazwa njengoburhabaxa be-root mean square (RMS) (in nm). Uburhabaxa bomphezulu obuphantsi buthetha ukuba umphezulu we-wafer uthambile, nto leyo enceda ekunciphiseni izinto ezifana nokusasazeka kwe-electron kwaye iphucula ukusebenza kunye nokuthembeka kwesixhobo. Kwiinkqubo zokuvelisa i-semiconductor eziphambili, iimfuno zoburhabaxa bomphezulu ziya ziba nzima ngakumbi, ngakumbi kwimveliso yesekethe edibeneyo ephezulu, apho uburhabaxa bomphezulu kufuneka bulawulwe kwiinanometer ezimbalwa okanye nangaphantsi.

Utshintsho Lobukhulu Obupheleleyo (TTV): Utshintsho lobukhulu obupheleleyo lubhekisa kumahluko phakathi kobukhulu obukhulu nobuncinci obulinganiswa kwiindawo ezininzi kumphezulu we-wafer, odla ngokubonakaliswa nge-μm. I-TTV ephezulu inokukhokelela ekuphambukeni kwiinkqubo ezifana ne-photolithography kunye nokukrola, okuchaphazela ukuhambelana kokusebenza kwesixhobo kunye nemveliso. Ke ngoko, ukulawula i-TTV ngexesha lokwenziwa kwe-wafer linyathelo eliphambili ekuqinisekiseni umgangatho wemveliso. Kwimveliso yezixhobo ze-microelectronic ezichanekileyo, i-TTV idla ngokufuneka ukuba ibe ngaphakathi kwee-micrometer ezimbalwa.

I-Bow: I-Bow ibhekisa ekuphambukeni phakathi komphezulu we-wafer kunye ne-flat plane efanelekileyo, edla ngokulinganiswa nge-μm. Ii-wafers ezinokugoba kakhulu zinokwaphuka okanye zifumana uxinzelelo olungalinganiyo ngexesha lokucubungula okulandelayo, okuchaphazela ukusebenza kakuhle kwemveliso kunye nomgangatho wemveliso. Ingakumbi kwiinkqubo ezifuna ukugoba okuphezulu, njenge-photolithography, ukugoba kufuneka kulawulwe ngaphakathi koluhlu oluthile ukuqinisekisa ukuchaneka kunye nokuhambelana kwepateni ye-photolithography.

I-Warp: I-Warp ibonisa ukuphambuka phakathi komphezulu we-wafer kunye nesimo esifanelekileyo se-spherical, esilinganiswa nge-μm. Ngokufana ne-bow, i-warp luphawu olubalulekileyo lokuthamba kwe-wafer. I-warp egqithisileyo ayichaphazeli kuphela ukuchaneka kokubekwa kwe-wafer kwizixhobo zokucubungula kodwa inokubangela iingxaki ngexesha lenkqubo yokupakisha i-chip, njengokubopha okubi phakathi kwe-chip kunye nezinto zokupakisha, nto leyo echaphazela ukuthembeka kwesixhobo. Kwimveliso ye-semiconductor ephezulu, iimfuno ze-warp ziya ziba nzima ukuhlangabezana neemfuno zeenkqubo zokuvelisa i-chip eziphambili kunye nokupakisha.

Iprofayili yoMphetho: Iprofayili yomphetho we-wafer ibalulekile ekucutshungulweni nasekuphathweni kwayo okulandelayo. Ihlala ichazwa yi-Edge Exclusion Zone (EEZ), echaza umgama ukusuka kumphetho we-wafer apho kungavumelekanga ukucutshungulwa khona. Iprofayili yomphetho eyilwe kakuhle kunye nolawulo oluchanekileyo lwe-EEZ kunceda ukuphepha iziphene zomphetho, uxinaniso loxinzelelo, kunye neminye imiba ngexesha lokucutshungulwa, ukuphucula umgangatho kunye nesivuno se-wafer iyonke. Kwezinye iinkqubo zokuvelisa eziphambili, ukuchaneka kweprofayili yomphetho kufuneka kube kwinqanaba le-sub-micron.

Ukubalwa kweeNgcambu: Inani kunye nobungakanani bokusasazwa kweengcambu kumphezulu we-wafer kuchaphazela kakhulu ukusebenza kwezixhobo ze-microelectronic. Iingcambu ezigqithisileyo okanye ezinkulu zinokukhokelela ekusileleni kwezixhobo, ezifana neesekethe ezimfutshane okanye ukuvuza, okunciphisa isivuno semveliso. Ke ngoko, inani leengcambu lidla ngokulinganiswa ngokubala iingcambu kwindawo nganye, njengenani leengcambu ezinkulu kune-0.3μm. Ulawulo oluqinileyo lokubala kweengcambu ngexesha lokwenziwa kwe-wafer luyindlela ebalulekileyo yokuqinisekisa umgangatho wemveliso. Ubuchwephesha bokucoca obuphambili kunye nendawo yokuvelisa ecocekileyo zisetyenziselwa ukunciphisa ungcoliseko lweengcambu kumphezulu we-wafer.

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