Iiwafer ze-SOI (Silicon-On-Insulator)imele izinto ezikhethekileyo ze-semiconductor ezinomaleko we-silicon obhityileyo kakhulu owenziwe phezu komaleko we-oxide okhuselayo. Olu lwakhiwo lwesandwich olulodwa lubonelela ngophuculo olubalulekileyo lokusebenza kwezixhobo ze-semiconductor.
Ulwakhiwo lwesakhiwo:
Umaleko wesixhobo (iSilicon ephezulu):
Ubukhulu buqala kwiinanometers ezahlukeneyo ukuya kwiimicrometers, zisebenza njengomaleko osebenzayo wokwenziwa kweetransistor.
Umaleko we-Oxide ongcwatywe (IBHOKISI):
Umaleko wokukhusela we-silicon dioxide (ubukhulu obuyi-0.05-15μm) owahlula ngombane umaleko wesixhobo kwi-substrate.
Isiseko sendawo:
I-silicon enkulu (ubude obuyi-100-500μm) inika inkxaso yoomatshini.
Ngokweteknoloji yenkqubo yokulungiselela, iindlela eziphambili zenkqubo ze-SOI silicon wafers zingahlulwa ngolu hlobo: i-SIMOX (iteknoloji yokwahlukanisa i-oxygen injection), i-BESOI (iteknoloji yokunciphisa i-bonding), kunye ne-Smart Cut (iteknoloji yokususa i-intelligent).
I-SIMOX (iteknoloji yokwahlulwa kwe-oxygen injection) yindlela ebandakanya ukufaka ii-ion ze-oxygen ezinamandla aphezulu kwii-silicon wafers ukuze kwenziwe umaleko ofakwe kwi-silicon dioxide, oza kuthi emva koko ufakwe kwi-annealing yobushushu obuphezulu ukuze kulungiswe iziphene ze-lattice. I-core yi-direct ion oxygen injection ukuze kwenziwe i-oxygen emaleko angcwatywe.
I-BESOI (iteknoloji ye-Bonding Thinning) ibandakanya ukubopha ii-wafers ezimbini ze-silicon uze uzinciphise enye yazo ngokusila ngoomatshini kunye nokusika iikhemikhali ukuze kwenziwe isakhiwo se-SOI. Umongo usekwe ekubopheni nasekunciphiseni.
I-Smart Cut (iteknoloji ye-Intelligent Exfoliation) yenza umaleko wokukhupha i-hydrogen ion ngenaliti ye-hydrogen ion. Emva kokubopha, unyango lobushushu lwenziwa ukuze kususwe i-silicon wafer ecaleni komaleko we-hydrogen ion, kwenze umaleko we-silicon obhityileyo kakhulu. Umongo yi-hydrogen injection stripping.
Okwangoku, kukho enye iteknoloji eyaziwa ngokuba yiSIMBOND (iteknoloji yokubopha i-oxygen injection), eyaphuhliswa yiXinao. Enyanisweni, yindlela edibanisa ukuhlukaniswa kwe-oxygen injection kunye neteknoloji yokubopha. Kule ndlela yobugcisa, i-oxygen efakwe kwi-injection isetyenziswa njengomaleko wokuthintela ukuncitshiswa, kwaye umaleko we-oxygen ongcwatywayo lulwaleko lwe-thermal oxidation. Ke ngoko, ngaxeshanye iphucula iiparameter ezifana nokufana kwe-silicon ephezulu kunye nomgangatho womaleko we-oxygen ongcwatywayo.
Ii-wafer ze-silicon ze-SOI ezenziwe ngeendlela ezahlukeneyo zobugcisa zinemilinganiselo yokusebenza eyahlukileyo kwaye zifanelekile kwiimeko ezahlukeneyo zokusetyenziswa.
Oku kulandelayo yitheyibhile yesishwankathelo seenzuzo eziphambili zokusebenza kwee-wafers ze-silicon ze-SOI, kunye neempawu zazo zobugcisa kunye neemeko zokusetyenziswa kwazo. Xa kuthelekiswa ne-silicon enkulu yendabuko, i-SOI ineenzuzo ezibalulekileyo ekulinganiseni isantya kunye nokusetyenziswa kwamandla. (PS: Ukusebenza kwe-22nm FD-SOI kusondele kuleyo ye-FinFET, kwaye ixabiso lincitshiswa nge-30%.)
| Inzuzo yokusebenza | Umgaqo woBugcisa | Ukubonakaliswa Okuthile | Imizekelo yeSicelo esiQhelekileyo |
| Umthamo ophantsi weParasitic Capacitance | Umaleko wokufaka ubushushu (BOX) iibhloko zokudibanisa itshaja phakathi kwesixhobo kunye nesiseko | Isantya sokutshintsha sinyuke nge-15%-30%, ukusetyenziswa kwamandla kuncitshiswe nge-20%-50% | I-5G RF, iitships zonxibelelwano olusebenzisa amaxesha amaninzi |
| Ukuvuza okuncitshisiweyo kwangoku | Umaleko wokufaka ubushushu uthintela iindlela zangoku ezivuzayo | Ukuvuza komsinga kuncitshiswe nge>90%, ubomi bebhetri obongezelelweyo | Izixhobo ze-IoT, izixhobo ze-elektroniki ezinxitywayo |
| Ukuqina Kwemitha Okuphuculweyo | Umaleko wokuvala ubushushu uvimba ukuqokelelwa kweshaja ebangelwa yimitha | Ukunyamezelana kwemitha kuphucule izihlandlo ezi-3-5, kwanciphisa ukwehla kwesiganeko esinye | Izixhobo zasemoyeni, izixhobo zoshishino lweNyukliya |
| Ulawulo lweMpembelelo yeSiteshi esifutshane | Umaleko omncinci we-silicon unciphisa ukuphazamiseka kwentsimi yombane phakathi komsele wokuhambisa amanzi kunye nomthombo | Uzinzo lwe-voltage yomda oluphuculweyo, i-subthreshold slope eyenziwe ngcono | Iitships ze-node logic eziphambili (<14nm) |
| Ulawulo oluPhuculweyo lweThermal | Umaleko wokufaka ubushushu unciphisa ukudibana kokuqhuba kobushushu | Ukuqokelelwa kobushushu okungaphantsi kwama-30%, ubushushu bokusebenza obuphantsi ngama-15-25°C | Ii-IC ze-3D, izixhobo ze-elektroniki zeemoto |
| Ukuphucula Ubuninzi Bexesha Eliphezulu | Ukunciphisa amandla okuthwala izinto ezibangela iintsholongwane kunye nokuhambahamba okuphuculweyo kokuthwala izinto | Ukulibaziseka okuphantsi kwe-20%, kuxhasa ukusetyenzwa kwesiginali ye->30GHz | Unxibelelwano lwe-mmWave, iitships ze-satellite comm |
| Ukuguquguquka koyilo okwandisiweyo | Akukho mfuneko yokusebenzisa i-doxy kwi-well dosage, ixhasa ukwakheka kwe-back bias | Amanyathelo enkqubo ambalwa nge-13%-20%, uxinano lokudibanisa luphezulu nge-40% | Ii-IC zesignali ezixutyiweyo, iiSensors |
| Ukungakhuseleki kokungakhuseleki | Umaleko wokuvala uphahla uhlukanisa ii-PN junctions ezibangelwa zizinambuzane | Umda wangoku we-Latch-up unyuswe waya kwi->100mA | Izixhobo zamandla aphezulu |
Ngamafutshane, iingenelo eziphambili ze-SOI zezi: isebenza ngokukhawuleza kwaye inamandla angcono.
Ngenxa yezi mpawu zokusebenza ze-SOI, inezicelo ezininzi kwiindawo ezifuna ukusebenza kakuhle kwamaza kunye nokusebenza kokusetyenziswa kwamandla.
Njengoko kubonisiwe ngezantsi, ngokusekwe kumlinganiselo wamasimi esicelo ahambelana ne-SOI, kunokubonwa ukuba i-RF kunye nezixhobo zamandla zibangela uninzi lwemarike ye-SOI.
| Intsimi yesicelo | Ukwabelana kwimakethi |
| I-RF-SOI (Ubuninzi beRadio) | 45% |
| Amandla e-SOI | 30% |
| I-FD-SOI (Iphelile ngokupheleleyo) | 15% |
| I-SOI ebonakalayo | 8% |
| I-SOI yenzwa | 2% |
Ngokukhula kweemarike ezifana nonxibelelwano lweselula kunye nokuqhuba ngokuzimela, ii-SOI silicon wafers nazo kulindeleke ukuba zigcine izinga elithile lokukhula.
I-XKH, njengomyili ophambili kwitekhnoloji ye-wafer yeSilicon-On-Insulator (SOI), inika izisombululo ze-SOI ezipheleleyo ukusuka kwi-R&D ukuya kwimveliso yomthamo kusetyenziswa iinkqubo zokuvelisa eziphambili kushishino. Ipotifoliyo yethu epheleleyo ibandakanya ii-wafer ze-SOI ezingama-200mm/300mm eziquka ii-RF-SOI, i-Power-SOI kunye ne-FD-SOI ezahlukeneyo, kunye nolawulo oluqinileyo lomgangatho oluqinisekisa ukuhambelana okugqwesileyo kokusebenza (ubukhulu obufanayo ngaphakathi kwe-±1.5%). Sinikezela ngezisombululo ezenzelwe wena ezinobukhulu be-layer ye-oxide (BOX) ukusuka kwi-50nm ukuya kwi-1.5μm kunye neenkcukacha ezahlukeneyo zokumelana ukuze kuhlangatyezwane neemfuno ezithile. Sisebenzisa iminyaka eli-15 yobuchwephesha bobuchwephesha kunye nekhonkco lokubonelela eliqinileyo lehlabathi, sinikezela ngokuthembekileyo ngezixhobo ze-SOI substrate ezikumgangatho ophezulu kubavelisi be-semiconductor abaphambili kwihlabathi liphela, senza kube lula ukuvelisa ii-chip ezintsha kunxibelelwano lwe-5G, izixhobo ze-elektroniki zeemoto, kunye nezicelo zobukrelekrele bokwenziwa.
XKH'Iiwafer zeSOI:
Ixesha leposi: Epreli-24-2025