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Isikhokelo esiBanzi seSilicon Carbide Wafers / SiC wafer

I-SiC wafer's abstract

 I-silicon carbide (i-SiC) yafersibe yindawo ekhethwayo kumandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu be-elektroniki kuwo wonke amacandelo eemoto, ahlaziyekayo, kunye ne-aerospace. Iipotifoliyo zethu zibandakanya iipolytypes eziphambili kunye nezicwangciso ze-doping-nitrogen-doped 4H (4H-N), i-high-purity semi-insulating (HPSI), i-nitrogen-doped 3C (3C-N), kunye ne-p-type 4H / 6H (4H / 6H-P) - inikezelwa ngamabakala amathathu omgangatho: I-PRIME (iphuculwe ngokupheleleyo, i-device-graded, inkqubo ye-DUMMY) UPHANDO (umaleko we-epi wesiko kunye neeprofayili ze-doping ze-R&D). I-Wafer diameters span 2″, 4″, 6″, 8″, kunye ne-12″ ukuze zilungele zombini izixhobo zelifa kunye neefabs eziphambili. Sikwabonelela ngee-boules ze-monocrystalline kunye neekristale zembewu ezijoliswe ngokuchanekileyo ukuxhasa ukukhula kwekristale yangaphakathi.

Ii-wafers zethu ze-4H-N zibonakalisa ukuxinana komthuthi ukusuka kwi-1×10¹⁶ ukuya kwi-1×10¹⁹ cm⁻³ kunye nokuxhathisa kwe-0.01–10 Ω·cm, ukuhambisa ukuhamba kwe-electron okugqwesileyo kunye neendawo zokwaphuka ngaphezulu kwe-2 MV/cm-zilungele iidiode ze-Schottky, kunye ne-JSSFETY. I-HPSI substrates idlula i-1×10¹² Ω·cm ukuxhathisa ngoxinaniso lwemicropipe ngaphantsi kwe-0.1 cm⁻², iqinisekisa ukuvuza okuncinci kwi-RF kunye nezixhobo ze-microwave. I-Cubic 3C-N, ekhoyo kwiifomathi ze-2 "kunye ne-4", yenza i-heteroepitaxy kwi-silicon kwaye ixhasa i-novel photonic kunye nezicelo ze-MEMS. I-P-uhlobo lwe-4H/6H-P yama-wafers, afakwe nge-aluminiyam ukuya kwi-1×10¹⁶–5×10¹⁸ cm⁻³, iququzelela ulwakhiwo lwezixhobo ezihambelanayo.

I-SiC wafer, ii-PRIME wafers zenziwa ukupolishwa kwekhemikhali ukuya ku-<0.2 nm RMS yoburhabaxa bomphezulu, ukuguquguquka okupheleleyo phantsi kwe-3 µm, kunye ne-bow <10 µm. Isubstrates zeDUMMY zikhawulezisa ukudibanisa kunye novavanyo lokupakisha, ngelixa iiwafers UPHANDO zibonakalisa ubukhulu be-epi-layer ye-2–30 µm kunye ne-bespoke doping. Zonke iimveliso ziqinisekiswa nge-X-ray diffraction (i-rocking curve <30 arcsec) kunye ne-Raman spectroscopy, kunye neemvavanyo zombane-imilinganiselo yeHolo, iphrofayili ye-C-V, kunye ne-micropipe scanning-ukuqinisekisa ukuthotyelwa kwe-JEDEC kunye ne-SEMI.

Iibhowule ukuya kuthi ga kwi-150 mm ubukhulu zikhuliswa nge-PVT kunye ne-CVD kunye nokuxinana kwe-dislocation ngaphantsi kwe-1×10³ cm⁻² kunye nezibalo ze-micropipe eziphantsi. Iikristale zembewu zisikwa ngaphakathi kwe-0.1 ° ye-axis ye-c ukuqinisekisa ukukhula okuphindayo kunye nezivuno eziphezulu zokusika.

Ngokudibanisa iipolytypes ezininzi, ukwahluka kwe-doping, amabakala asemgangathweni, ubungakanani be-SiC wafer, kunye ne-boule yangaphakathi kunye nemveliso yekristale yembewu, iqonga lethu le-SiC substrate lilungelelanisa amatyathanga okubonelela kwaye likhawulezise uphuhliso lwesixhobo kwizithuthi zombane, iigridi ezihlakaniphile, kunye nezicelo ezirhabaxa zokusingqongileyo.

I-SiC wafer's abstract

 I-silicon carbide (i-SiC) yafersbaye baba yi-substrate ye-SiC yokuzikhethela kumandla aphezulu, i-high-frequency, kunye nobushushu obuphezulu be-elektroniki kuwo wonke amacandelo emoto, ahlaziyekayo, kunye ne-aerospace. Iipotifoliyo zethu zibandakanya i-polytypes eziphambili kunye ne-doping schemes-i-nitrogen-doped 4H (4H-N), i-high-purity semi-insulating (HPSI), i-nitrogen-doped 3C (3C-N), kunye ne-p-type 4H / 6H (4H / 6H-P) -enikezelwa ngamabakala amathathu omgangatho: SiC waferI-PRIME (egudiswe ngokupheleleyo, iisubstrates zodidi lwesixhobo), i-DUMMY (egqitywe okanye ayipolishwanga kulingo lwenkqubo), kunye noPHANDO (umaleko we-epi oqhelekileyo kunye neeprofayili ze-doping ze-R&D). I-SiC Wafer diameters span 2″, 4″, 6″, 8″, kunye ne-12″ ukuze zilungele zombini izixhobo zelifa kunye neefabs eziphambili. Sikwabonelela ngee-boules ze-monocrystalline kunye neekristale zembewu ezijoliswe ngokuchanekileyo ukuxhasa ukukhula kwekristale yangaphakathi.

Iziqwenga zethu ze-4H-N SiC zibonakalisa uxinaniso lokuthwala ukusuka kwi-1×10¹⁶ ukuya kwi-1×10¹⁹ cm⁻³ kunye nokuxhathisa kwe-0.01–10 Ω·cm, ukuhambisa ukuhamba kwe-electron okugqwesileyo kunye nemimandla yokwaphuka ngaphezulu kwe-2 MV/cm—ilungele ii-Schottky diodes, ii-MOSFET diodes, kunye ne-JFETS. I-HPSI substrates idlula i-1×10¹² Ω·cm ukuxhathisa ngoxinaniso lwemicropipe ngaphantsi kwe-0.1 cm⁻², iqinisekisa ukuvuza okuncinci kwi-RF kunye nezixhobo ze-microwave. I-Cubic 3C-N, ekhoyo kwiifomathi ze-2 "kunye ne-4", yenza i-heteroepitaxy kwi-silicon kwaye ixhasa i-novel photonic kunye nezicelo ze-MEMS. I-SiC wafer P-uhlobo lwe-4H/6H-P ii-wafers, ezifakwe nge-aluminiyam ukuya kwi-1×10¹⁶–5×10¹⁸ cm⁻³, ziququzelela ulwakhiwo lwezixhobo ezihambelanayo.

I-SiC wafer PRIME wafers zenziwa ukupolishwa kwekhemikhali ukuya ku-<0.2 nm RMS yoburhabaxa bomphezulu, ukuguquguquka kobunzima bubonke phantsi kwe-3 µm, kunye ne-bow <10 µm. Isubstrates zeDUMMY zikhawulezisa ukudibanisa kunye novavanyo lokupakisha, ngelixa iiwafers UPHANDO zibonakalisa ubukhulu be-epi-layer ye-2–30 µm kunye ne-bespoke doping. Zonke iimveliso ziqinisekiswa nge-X-ray diffraction (i-rocking curve <30 arcsec) kunye ne-Raman spectroscopy, kunye neemvavanyo zombane-imilinganiselo yeHolo, iphrofayili ye-C-V, kunye ne-micropipe scanning-ukuqinisekisa ukuthotyelwa kwe-JEDEC kunye ne-SEMI.

Iibhowule ukuya kuthi ga kwi-150 mm ubukhulu zikhuliswa nge-PVT kunye ne-CVD kunye nokuxinana kwe-dislocation ngaphantsi kwe-1×10³ cm⁻² kunye nezibalo ze-micropipe eziphantsi. Iikristale zembewu zisikwa ngaphakathi kwe-0.1 ° ye-axis ye-c ukuqinisekisa ukukhula okuphindayo kunye nezivuno eziphezulu zokusika.

Ngokudibanisa iipolytypes ezininzi, ukwahluka kwe-doping, amabakala asemgangathweni, ubungakanani be-SiC wafer, kunye ne-boule yangaphakathi kunye nemveliso yekristale yembewu, iqonga lethu le-SiC substrate lilungelelanisa amatyathanga okubonelela kwaye likhawulezise uphuhliso lwesixhobo kwizithuthi zombane, iigridi ezihlakaniphile, kunye nezicelo ezirhabaxa zokusingqongileyo.

Umfanekiso weSiC wafer

I-6inch 4H-N uhlobo lwe-SiC wafer's data sheet

 

6inch SiC wafers data sheet
Ipharamitha I-Sub-Parameter IBanga le-Z IBanga le-P D iBanga
Ububanzi   149.5-150.0 mm 149.5-150.0 mm 149.5-150.0 mm
Ukutyeba 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Ukutyeba 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
I-Wafer Orientation   I-off axis: 4.0 ° ukuya <11-20> ± 0.5 ° (4H-N); Kwi-axis: <0001> ±0.5° (4H-SI) I-off axis: 4.0 ° ukuya <11-20> ± 0.5 ° (4H-N); Kwi-axis: <0001> ±0.5° (4H-SI) I-off axis: 4.0 ° ukuya <11-20> ± 0.5 ° (4H-N); Kwi-axis: <0001> ±0.5° (4H-SI)
Ukuxinana kweMibhobho 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Ukuxinana kweMibhobho 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Ukuxhathisa 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ukuxhathisa 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Ukuqhelaniswa neFlethi okuPhambili   [10-10] ± 5.0 ° [10-10] ± 5.0 ° [10-10] ± 5.0 °
Ubude beFlethi obuPhambili 4H‑N 47.5 mm ± 2.0 mm    
Ubude beFlethi obuPhambili 4H‑SI Inotshi    
Ukungabandakanywa kuMda     3 mm  
Warp/LTV/TTV/Bow   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Uburhabaxa Polish Ra ≤ 1 nm    
Uburhabaxa CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Edge Cracks   Akukho nanye   Ubude obuqokelelweyo ≤ 20 mm, eyodwa ≤ 2 mm
Iipleyiti zeHex   Indawo eyongezelekayo ≤ 0.05% Indawo eyongezelekayo ≤ 0.1% Indawo eyongezelekayo ≤ 1%
Iindawo zePolytype   Akukho nanye Indawo eyongezelekayo ≤ 3% Indawo eyongezelekayo ≤ 3%
Ukubandakanywa kweKhabhoni   Indawo eyongezelekayo ≤ 0.05%   Indawo eyongezelekayo ≤ 3%
Imikrwelo yoMphezulu   Akukho nanye   Ubude obongezelekayo ≤ 1 × idiameter yewafer
IiChips zoMda   Akukho kuvunyelweyo ≥ 0.2 mm ububanzi & ubunzulu   Ukuya kuthi ga kwi-7 chips, ≤ 1 mm nganye
I-TSD (I-Treading Screw Dislocation)   ≤ 500 cm⁻²   N / A
I-BPD (iSiseko sokuchithwa kweNqwelomoya)   ≤ 1000 cm⁻²   N / A
Ungcoliseko loMphezulu   Akukho nanye    
Ukupakishwa   Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba

I-4inch 4H-N uhlobo lwe-SiC wafer's data sheet

 

Iphepha ledatha ye-SiC ye-4inch
Ipharamitha Zero MPD Production IBanga leMveliso esemgangathweni (iBanga le-P) IBanga leDummy (iBanga D)
Ububanzi 99.5 mm–100.0 mm
Ukutyeba (4H-N) 350µm±15µm   350µm±25µm
Ukutyeba (4H-Si) 500 µm±15µm   500µm±25µm
I-Wafer Orientation I-off axis: 4.0 ° malunga ne- <1120> ± 0.5 ° ye-4H-N; Kwi-axis: <0001> ± 0.5 ° ye-4H-Si    
Uxinaniso lweMibhobho (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Uxinaniso lweMibhobho (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukuxhathisa (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ukuxhathisa (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Ukuqhelaniswa neFlethi okuPhambili   [10-10] ± 5.0 °  
Ubude beFlethi obuPhambili   32.5 mm ±2.0 mm  
Ubude beFlethi yesibini   18.0 mm ±2.0 mm  
Ukuqhelaniswa neFlethi yesibini   I-silicon ijonge phezulu: 90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °  
Ukungabandakanywa kuMda   3 mm  
LTV/TTV/Bow Warp ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Uburhabaxa IsiPolish Ra ≤1 nm; I-CMP Ra ≤0.2 nm   Ra ≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo Akukho nanye Akukho nanye Ubude obongezelekayo ≤10 mm; ubude obunye ≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo Indawo eyongezelekayo ≤0.05% Indawo eyongezelekayo ≤0.05% Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo Akukho nanye   Indawo eyongezelekayo ≤3%
Ukubandakanywa kweCarbon ebonakalayo Indawo eyongezelekayo ≤0.05%   Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo Akukho nanye   Ubude obongezelekayo ≤1 idayamitha yewafer
I-Edge Chips NgokuKhanya okuPhakamileyo Akukho kuvunyelweyo ≥0.2 mm ububanzi nobunzulu   I-5 ivunyelwe, ≤1 mm nganye
Ukungcoliswa komphezulu weSilicon ngokuKhanya okuPhakamileyo Akukho nanye    
Ukushenxiswa kwesikrufu somsonto ≤500 cm⁻² N / A  
Ukupakishwa Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba

4inch HPSI uhlobo SiC wafer data sheet

 

4inch HPSI uhlobo SiC wafer data sheet
Ipharamitha Zero MPD iBanga leMveliso (iBanga leZ) IBanga leMveliso esemgangathweni (iBanga le-P) IBanga leDummy (iBanga D)
Ububanzi   99.5-100.0 mm  
Ukutyeba (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
I-Wafer Orientation I-off axis: 4.0 ° malunga ne- <11-20> ± 0.5 ° ye-4H-N; Kwi-axis: <0001> ± 0.5 ° ye-4H-Si
Uxinaniso lweMibhobho (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukuxhathisa (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Ukuqhelaniswa neFlethi okuPhambili (10-10) ± 5.0 °
Ubude beFlethi obuPhambili 32.5 mm ±2.0 mm
Ubude beFlethi yesibini 18.0 mm ±2.0 mm
Ukuqhelaniswa neFlethi yesibini I-silicon ijonge phezulu: 90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °
Ukungabandakanywa kuMda   3 mm  
LTV/TTV/Bow Warp ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Uburhabaxa (C ubuso) Polish Ra ≤1 nm  
Uburhabaxa (Si face) CMP Ra ≤0.2 nm Ra ≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo Akukho nanye   Ubude obongezelekayo ≤10 mm; ubude obunye ≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo Indawo eyongezelekayo ≤0.05% Indawo eyongezelekayo ≤0.05% Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo Akukho nanye   Indawo eyongezelekayo ≤3%
Ukubandakanywa kweCarbon ebonakalayo Indawo eyongezelekayo ≤0.05%   Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo Akukho nanye   Ubude obongezelekayo ≤1 idayamitha yewafer
I-Edge Chips NgokuKhanya okuPhakamileyo Akukho kuvunyelweyo ≥0.2 mm ububanzi nobunzulu   I-5 ivunyelwe, ≤1 mm nganye
Ukungcoliswa komphezulu weSilicon ngokuKhanya okuPhakamileyo Akukho nanye   Akukho nanye
Ukushenxiswa kweScrew somsonto ≤500 cm⁻² N / A  
Ukupakishwa   Iikhasethi ezininzi zewafer okanye isikhongozeli esinye esisicaba  

Isicelo seSiC wafer

 

  • Iimodyuli zeSiC Wafer Power ze-EV Inverters
    Ii-MOSFET ezisekelwe kwi-SiC wafer kunye ne-diode ezakhelwe kumgangatho ophezulu we-SiC wafer substrates zizisa ilahleko esezantsi kakhulu yokutshintsha. Ngokusebenzisa itekhnoloji ye-SiC wafer, ezi modyuli zamandla zisebenza kumandla ombane aphezulu kunye namaqondo obushushu, nto leyo eyenza ukuba ii-inverters ze-traction zisebenze ngakumbi. Ukudibanisa i-wafer ye-SiC ifa kwizigaba zamandla kunciphisa iimfuno zokupholisa kunye neenyawo, kubonisa amandla apheleleyo e-SiC wafer innovation.

  • I-High-Frequency RF & 5G Devices on SiC Wafer
    Izandisi ze-RF kunye nokutshintsha okwenziwe kwiiplatifti ze-SiC ze-wafer ze-semi-insulating zibonisa ukuhanjiswa kwe-thermal ephezulu kunye nokutshatyalaliswa kwamandla. I-SiC wafer substrate inciphisa ilahleko ye-dielectric kwi-GHz frequencies, ngelixa amandla e-SiC wafer avumela ukusebenza okuzinzileyo phantsi kwamandla aphezulu, iimeko zokushisa eziphezulu-ukwenza i-SiC wafer i-substrate yokuzikhethela kwizikhululo zesiseko ze-5G ezizayo kunye neenkqubo ze-radar.

  • I-Optoelectronic kunye ne-LED Substrates esuka kwi-SiC Wafer
    Ii-LED eziluhlaza kunye ne-UV ezikhule kwi-SiC wafer substrates zixhamla kuthelekiso olugqwesileyo lwe-lattice kunye nokulahla ubushushu. Ukusebenzisa i-wafer ye-SiC epolishiweyo yobuso iqinisekisa iileya ze-epitaxial ezifanayo, ngelixa ubulukhuni bendalo be-SiC wafer buvumela ukuba i-wafer ibe yincinci kunye nokupakishwa kwesixhobo esithembekileyo. Oku kwenza i-SiC wafer ibe yindawo yokuya kwiqonga lamandla aphezulu, ubomi obude bezicelo ze-LED.

I-SiC wafer's Q&A

1. Q: Zenziwa njani ii-wafers ze-SiC?


A:

Ii-wafers ze-SiC zenziweAmanyathelo aneenkcukacha

  1. Iifafa zeSiCUkulungiswa kwezinto ezikrwada

    • Sebenzisa i-≥5N-grade SiC powder (ukungcola ≤1 ppm).
    • Sieve kwaye ubhake kwangaphambili ukususa intsalela yekhabhoni okanye iikhompawundi zenitrogen.

  1. SiCUkulungiswa kwekristale yembewu

    • Thatha iqhekeza le-4H-SiC yekristale enye, sila ecaleni kwendlela 〈0001〉 yokuqhelaniswa ukuya ~ 10 × 10 mm².

    • Ipolishi echanekileyo ukuya kwi-Ra ≤0.1 nm kwaye iphawule i-crystal orientation.

  2. SiCUHlumo lwe-PVT (uThutho loMphunga obonakalayo)

    • Layisha i-graphite crucible: ezantsi kunye ne-SiC powder, phezulu kunye nekristale yembewu.

    • Phuma uye kwi-10⁻³–10⁻⁵ Torr okanye gcwalisa ngasemva nge-helium ecocekileyo nge-1 atm.

    • Indawo yomthombo wobushushu ukuya kuma-2100–2300 ℃, gcina indawo yembewu ipholile 100–150 ℃.

    • Lawula izinga lokukhula kwi-1-5 mm / h ukulinganisa umgangatho kunye nokuphumelela.

  3. SiCIngot Annealing

    • I-Aneal i-SiC ingot ekhulileyo kwi-1600-1800 ℃ iiyure ezi-4-8.

    • Injongo: ukukhulula uxinzelelo lwe-thermal kunye nokunciphisa ukuxinana kwe-dislocation.

  4. SiCI-Wafer Slicing

    • Sebenzisa isarha yedayimani yocingo ukuze unqumle ingot ibe yi-0.5-1 mm yamawafa angqingqwa.

    • Nciphisa ukungcangcazela kunye namandla asecaleni ukuphepha iintanda ezincinci.

  5. SiCWaferUkusila & ukupolisha

    • Ukusila ngokurhabaxaukususa umonakalo wokusarha (uburhabaxa ~10–30 µm).

    • Ukusila kakuhleukufikelela flatness ≤5 µm.

    • Ukukhazimliswa kweMichiza-Mechanical (CMP)ukufikelela kwisiphelo esifana nesipili (Ra ≤0.2 nm).

  6. SiCWaferUkucoca & Ukuhlola

    • Ukucoca nge-ultrasonickwisisombululo sePiranha (H₂SO₄:H₂O₂), amanzi e-DI, emva koko IPA.

    • XRD/Raman spectroscopyukuqinisekisa i-polytype (4H, 6H, 3C).

    • I-Interferometryukulinganisa ukucaba (<5 µm) kunye nokujika (<20 µm).

    • Iingongoma ezine probeukuvavanya ukuxhathisa (umzekelo HPSI ≥10⁹ Ω·cm).

    • Ukuhlolwa kwesiphenephantsi kwepolarized light microscope kunye ne-scratch tester.

  7. SiCWaferUHlelo & noHlelo

    • Hlela amaqhekeza nge-polytype kunye nodidi lombane:

      • 4H-SiC N-uhlobo (4H-N): umxhasi wogxininiso 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC High Purity Semi-Insulating (4H-HPSI): resistivity ≥10⁹ Ω·cm

      • 6H-SiC N-uhlobo (6H-N)

      • Abanye: 3C-SiC, P-uhlobo, njl.

  8. SiCWaferUkupakishwa kunye noThutho

    • Beka kwiibhokisi ezicocekileyo nezingenathuli.

    • Bhala ibhokisi nganye enobubanzi, ubukhulu, i-polytype, ibakala lokuxhathisa, kunye nenombolo yebhetshi.

      Iifafa zeSiC

2. Q: Zeziphi iingenelo eziphambili zee-SiC wafers ngaphezu kwee-silicone wafers?


A: Xa kuthelekiswa ne-silicon wafers, ii-SiC wafers zinika amandla:

  • Ukusebenza kwamandla ombane aphezulu(>1,200 V) kunye nokumelana okuphantsi.

  • Uzinzo oluphezulu lobushushu(>300 °C) kunye nophuculo lolawulo lobushushu.

  • Izantya zokutshintsha ngokukhawulezangelahleko esezantsi yokutshintsha, ukunciphisa ukupholisa kwenqanaba lenkqubo kunye nobukhulu kwiziguquli zamandla.

4. Q: Ziziphi iziphene eziqhelekileyo ezichaphazela isivuno se-SiC wafer kunye nokusebenza?


A: Iziphene eziphambili kwii-SiC wafers ziquka i-micropipes, i-basal plane dislocations (BPDs), kunye nemikrwelo yomhlaba. Imibhobho inokubangela ukusilela kwesixhobo esiyingozi; Ii-BPDs zonyuka kwi-resistance ekuhambeni kwexesha; kunye nemikrwelo yomphezulu ikhokelela ekwaphukeni kwewafer okanye ukukhula kakubi kwe-epitaxial. Ukuhlolwa okungqongqo kunye nokunciphisa isiphene kubalulekile ke ngoko ukwandisa isivuno se-wafer ye-SiC.

Ixesha lokuposa: Jun-30-2025
Cofa u-enter ukukhangela okanye i-ESC ukuvala