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Isikhokelo esipheleleyo seSilicon Carbide Wafers/SiC wafer

Isishwankathelo se-SiC wafer

 Iiwafer zeSilicon Carbide (SiC)ziye zaba yindawo ekhethwayo kwii-elektroniki ezinamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu kumacandelo eemoto, amandla avuselelekayo, kunye neenqwelo-moya. Ipotifoliyo yethu igubungela iipolytypes eziphambili kunye nezicwangciso ze-doping—i-4H (4H-N) ene-nitrogen, i-semi-insulating ephezulu (HPSI), i-3C (3C-N) ene-nitrogen, kunye ne-p-type 4H/6H (4H/6H-P)—ezinikezelwa ngamanqanaba amathathu asemgangathweni: i-PRIME (ii-substrates ezipolishwe ngokupheleleyo, ezikumgangatho wesixhobo), i-DUMMY (efakwe okanye engapolishwanga kwizilingo zenkqubo), kunye ne-RESEARCH (ii-epi layers ezenziwe ngokwezifiso kunye neeprofayili ze-doping ze-R&D). Ububanzi be-wafer bufikelela kwi-2″, 4″, 6″, 8″, kunye ne-12″ ukuze zilungele zombini izixhobo ezindala kunye neefabs eziphambili. Sikwabonelela ngee-monocrystalline boules kunye neekristale zembewu ezijolise ngqo ukuxhasa ukukhula kwekristale yangaphakathi.

Iiwafer zethu ze-4H-N zinoxinano oluvela kwi-1×10¹⁶ ukuya kwi-1×10¹⁹ cm⁻³ kunye neeresistivities ze-0.01–10 Ω·cm, zibonelela ngokuhamba kakuhle kwe-electron kunye neendawo zokuqhekeka ezingaphezulu kwe-2 MV/cm—zilungele ii-diode zeSchottky, iiMOSFET, kunye neeJFET. Iisubstrates ze-HPSI zidlula i-1×10¹² Ω·cm resistivity kunye nee-micropipe densities ezingaphantsi kwe-0.1 cm⁻², ziqinisekisa ukuvuza okuncinci kwizixhobo ze-RF kunye ne-microwave. I-Cubic 3C-N, ekhoyo kwiifomathi ze-2″ kunye ne-4″, ivumela i-heteroepitaxy kwi-silicon kwaye ixhasa usetyenziso olutsha lwe-photonic kunye ne-MEMS. Iiwafers ze-P-type 4H/6H-P, ezifakwe i-aluminium ukuya kwi-1×10¹⁶–5×10¹⁸ cm⁻³, ziququzelela uyilo lwezixhobo ezincedisayo.

Ii-wafer ze-SiC, ii-PRIME zinyangwa ngekhemikhali ukuya kwi-<0.2 nm RMS roughness, umahluko wobukhulu obupheleleyo phantsi kwe-3 µm, kunye ne-bow <10 µm. Ii-substrates ze-DUMMY zikhawulezisa uvavanyo lokuhlanganisa kunye nokupakisha, ngelixa ii-wafer ze-RESEARCH zine-epi-layer thicknesses ze-2–30 µm kunye ne-doping eyenzelwe wena. Zonke iimveliso ziqinisekiswe yi-X-ray diffraction (i-rocking curve <30 arcsec) kunye ne-Raman spectroscopy, kunye novavanyo lombane—ukulinganisa iHall, i-C–V profiles, kunye ne-micropipe scanning—ukuqinisekisa ukuthotyelwa kwe-JEDEC kunye ne-SEMI.

Iibhola ezifikelela kwi-150 mm ububanzi zikhuliswa nge-PVT kunye ne-CVD ezinobunzima bokuqhekeka ngaphantsi kwe-1×10³ cm⁻² kunye nokubalwa okuphantsi kwe-micropipe. Iikristale zembewu zinqunyulwa ngaphakathi kwe-0.1° ye-c-axis ukuqinisekisa ukukhula okuphindaphindwayo kunye nesivuno esiphezulu sokusika.

Ngokudibanisa iintlobo ezininzi ze-polytypes, iintlobo ezahlukeneyo ze-doping, amanqanaba omgangatho, ubungakanani be-SiC wafer, kunye nemveliso ye-boule kunye ne-seed-crystal yangaphakathi, iqonga lethu le-SiC substrate lenza kube lula ukuhanjiswa kweenkonzo kwaye likhawulezise uphuhliso lwezixhobo zezithuthi zombane, iigridi ezikrelekrele, kunye nokusetyenziswa kwendalo enzima.

Isishwankathelo se-SiC wafer

 Iiwafer zeSilicon Carbide (SiC)ziye zaba yindawo ekhethwayo ye-SiC kwii-elektroniki ezinamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu kumacandelo eemoto, amandla avuselelekayo, kunye neenqwelo moya. Ipotifoliyo yethu igubungela ii-polytypes eziphambili kunye neenkqubo ze-doping—i-nitrogen-doped 4H (4H-N), i-high-purity semi-insulating (HPSI), i-nitrogen-doped 3C (3C-N), kunye ne-p-type 4H/6H (4H/6H-P)—ezinikezelwa ngamabakala amathathu omgangatho: i-SiC waferI-PRIME (ii-substrates ezicociweyo ngokupheleleyo, ezikumgangatho wesixhobo), i-DUMMY (efakwe okanye engapholishwanga kwiimvavanyo zenkqubo), kunye ne-RESEARCH (ii-epi layers ezenziwe ngokwezifiso kunye neeprofayili ze-doping ze-R&D). Ububanzi be-SiC Wafer bufikelela kwi-2″, 4″, 6″, 8″, kunye ne-12″ ukuze zilungele zombini izixhobo zakudala kunye neefabs eziphambili. Sikwabonelela ngee-monocrystalline boules kunye neekristale zembewu ezijolise ngqo ukuxhasa ukukhula kwekristale ngaphakathi.

Ii-wafer zethu ze-4H-N SiC zinoxinano oluvela kwi-1×10¹⁶ ukuya kwi-1×10¹⁹ cm⁻³ kunye nee-resistivities ze-0.01–10 Ω·cm, zibonelela ngokuhamba kakuhle kwe-electron kunye neendawo zokuqhekeka ezingaphezulu kwe-2 MV/cm—zilungele ii-diode zeSchottky, ii-MOSFET, kunye nee-JFET. Ii-substrates ze-HPSI zidlula i-1×10¹² Ω·cm resistivity kunye nee-micropipe densities ezingaphantsi kwe-0.1 cm⁻², ziqinisekisa ukuvuza okuncinci kwizixhobo ze-RF kunye ne-microwave. I-Cubic 3C-N, ekhoyo kwiifomathi ze-2″ kunye ne-4″, ivumela i-heteroepitaxy kwi-silicon kwaye ixhasa usetyenziso olutsha lwe-photonic kunye ne-MEMS. Ii-wafer ze-SiC wafer P-type 4H/6H-P, ezifakwe i-aluminium ukuya kwi-1×10¹⁶–5×10¹⁸ cm⁻³, ziququzelela uyilo lwezixhobo ezincedisayo.

Ii-wafer ze-SiC PRIME zilungiswa ngekhemikhali ukuya kwi-<0.2 nm RMS roughness, umahluko wobukhulu obupheleleyo phantsi kwe-3 µm, kunye ne-bow <10 µm. Ii-substrates ze-DUMMY zikhawulezisa uvavanyo lokuhlanganisa kunye nokupakisha, ngelixa ii-wafers ze-RESEARCH zine-epi-layer thicknesses ze-2–30 µm kunye ne-doping eyenzelwe wena. Zonke iimveliso ziqinisekiswe yi-X-ray diffraction (i-rocking curve <30 arcsec) kunye ne-Raman spectroscopy, kunye novavanyo lombane—ukulinganisa iHall, i-C–V profiles, kunye ne-micropipe scanning—ukuqinisekisa ukuthotyelwa kwe-JEDEC kunye ne-SEMI.

Iibhola ezifikelela kwi-150 mm ububanzi zikhuliswa nge-PVT kunye ne-CVD ezinobunzima bokuqhekeka ngaphantsi kwe-1×10³ cm⁻² kunye nokubalwa okuphantsi kwe-micropipe. Iikristale zembewu zinqunyulwa ngaphakathi kwe-0.1° ye-c-axis ukuqinisekisa ukukhula okuphindaphindwayo kunye nesivuno esiphezulu sokusika.

Ngokudibanisa iintlobo ezininzi ze-polytypes, iintlobo ezahlukeneyo ze-doping, amanqanaba omgangatho, ubungakanani be-SiC wafer, kunye nemveliso ye-boule kunye ne-seed-crystal yangaphakathi, iqonga lethu le-SiC substrate lenza kube lula ukuhanjiswa kweenkonzo kwaye likhawulezise uphuhliso lwezixhobo zezithuthi zombane, iigridi ezikrelekrele, kunye nokusetyenziswa kwendalo enzima.

Umfanekiso we-SiC wafer

Iphepha ledatha le-SiC wafer yohlobo lwe-6 intshi 4H-N

 

Iphepha ledatha le-SiC wafers eziyi-6 intshi
Ipharamitha Ipharamitha engaphantsi Ibanga lika-Z Ibanga le-P Ibanga le-D
Ububanzi   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Ubukhulu 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Ubukhulu 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Uqeqesho lweWafer   I-axis engaphandle: 4.0° ukuya <11-20> ±0.5° (4H-N); I-axis engaphandle: <0001> ±0.5° (4H-SI) I-axis engaphandle: 4.0° ukuya <11-20> ±0.5° (4H-N); I-axis engaphandle: <0001> ±0.5° (4H-SI) I-axis engaphandle: 4.0° ukuya <11-20> ±0.5° (4H-N); I-axis engaphandle: <0001> ±0.5° (4H-SI)
Uxinano lweeMipayipi ezincinci 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Uxinano lweeMipayipi ezincinci 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Ukuxhathisa 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ukuxhathisa 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Uqhelaniso oluPhambili oluSicaba   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Ubude obuPhambili obuSicaba 4H‑N 47.5 mm ± 2.0 mm    
Ubude obuPhambili obuSicaba 4H‑SI I-Notch    
Ukukhutshwa komda     3 mm  
I-Warp/LTV/TTV/Bow   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Uburhabaxa Polish I-Ra ≤ 1 nm    
Uburhabaxa I-CMP I-Ra ≤ 0.2 nm   I-Ra ≤ 0.5 nm
Iintanda zomphetho   Akukho nanye   Ubude obuqokelelweyo ≤ 20 mm, enye ≤ 2 mm
Iipleyiti zeHex   Indawo eqokelelweyo ≤ 0.05% Indawo eqokelelweyo ≤ 0.1% Indawo eqokelelweyo ≤ 1%
Iindawo zePolytype   Akukho nanye Indawo eqokelelweyo ≤ 3% Indawo eqokelelweyo ≤ 3%
Ukubandakanywa kweCarbon   Indawo eqokelelweyo ≤ 0.05%   Indawo eqokelelweyo ≤ 3%
Imikrwelo yomphezulu   Akukho nanye   Ubude obuqokelelweyo ≤ 1 × ububanzi bewafer
Iitships zomphetho   Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.2 mm   Ukuya kuthi ga kwiitships ezi-7, ≤ 1 mm nganye
I-TSD (Ukususwa Kwesikrufu Somsonto)   ≤ 500 cm⁻²   N / A
I-BPD (Ukufuduka kweSiza esiSeko)   ≤ 1000 cm⁻²   N / A
Ungcoliseko lomphezulu   Akukho nanye    
Ukupakisha   Ikhasethi yewafer eninzi okanye isitya sewafer enye Ikhasethi yewafer eninzi okanye isitya sewafer enye Ikhasethi yewafer eninzi okanye isitya sewafer enye

Iphepha ledatha le-SiC wafer yohlobo lwe-4H-N oluyi-4 intshi

 

Iphepha ledatha le-wafer ye-SiC ye-intshi ezi-4
Ipharamitha Imveliso ye-MPD engekhoyo Ibanga leMveliso eQhelekileyo (iBanga le-P) Udidi oluyiDummy (Udidi D)
Ububanzi 99.5 mm–100.0 mm
Ubukhulu (4H-N) 350 µm±15 µm   350 µm±25 µm
Ubukhulu (4H-Si) 500 µm±15 µm   500 µm±25 µm
Uqeqesho lweWafer I-axis engaphandle: 4.0° ukuya kwi-<1120> ±0.5° kwi-4H-N; I-axis engaphandle: <0001> ±0.5° kwi-4H-Si    
Uxinano lweeMipayipi ezincinci (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Uxinano lweeMipayipi ezincinci (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukuxhathisa (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ukuxhathisa (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Uqhelaniso oluPhambili oluSicaba   [10-10] ±5.0°  
Ubude obuPhambili obuSicaba   32.5 mm ±2.0 mm  
Ubude obuSicaba beSibini   18.0 mm ±2.0 mm  
Ulwazelelelo lweSibini oluSicaba   I-silicon ijonge phezulu: 90° CW ukusuka kwi-prime flat ±5.0°  
Ukukhutshwa komda   3 mm  
I-LTV/TTV/I-Bow Warp ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Uburhabaxa I-Polish Ra ≤1 nm; I-CMP Ra ≤0.2 nm   I-Ra ≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Akukho nanye Akukho nanye Ubude obuqokelelweyo ≤10 mm; ubude obunye ≤2 mm
Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.1%
Iindawo zePolytype Ngokukhanya Okuphezulu Akukho nanye   Indawo eqokelelweyo ≤3%
Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Indawo eqokelelweyo ≤0.05%   Indawo eqokelelweyo ≤3%
Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu Akukho nanye   Ubude obuqokelelweyo ≤1 ububanzi bewafer
Iitships zomphetho ngokukhanya okuphezulu Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2 mm   5 zivumelekile, ≤1 mm nganye
Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo Akukho nanye    
Ukusasazeka kwesikrufu somsonto ≤500 cm⁻² N / A  
Ukupakisha Ikhasethi yewafer eninzi okanye isitya sewafer enye Ikhasethi yewafer eninzi okanye isitya sewafer enye Ikhasethi yewafer eninzi okanye isitya sewafer enye

Iphepha ledatha le-wafer ye-SiC ye-HPSI eyi-4 intshi

 

Iphepha ledatha le-wafer ye-SiC ye-HPSI eyi-4 intshi
Ipharamitha Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z) Ibanga leMveliso eQhelekileyo (iBanga le-P) Udidi oluyiDummy (Udidi D)
Ububanzi   99.5–100.0 mm  
Ubukhulu (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Uqeqesho lweWafer I-axis engaphandle: 4.0° ukuya <11-20> ±0.5° kwi-4H-N; I-axis engaphandle: <0001> ±0.5° kwi-4H-Si
Uxinano lweeMipayipi ezincinci (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukuxhathisa (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Uqhelaniso oluPhambili oluSicaba (10-10) ±5.0°
Ubude obuPhambili obuSicaba 32.5 mm ±2.0 mm
Ubude obuSicaba beSibini 18.0 mm ±2.0 mm
Ulwazelelelo lweSibini oluSicaba I-silicon ijonge phezulu: 90° CW ukusuka kwi-prime flat ±5.0°
Ukukhutshwa komda   3 mm  
I-LTV/TTV/I-Bow Warp ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Uburhabaxa (ubuso buka-C) Polish I-Ra ≤1 nm  
Uburhabaxa (ubuso bukaSi) I-CMP I-Ra ≤0.2 nm I-Ra ≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Akukho nanye   Ubude obuqokelelweyo ≤10 mm; ubude obunye ≤2 mm
Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.1%
Iindawo zePolytype Ngokukhanya Okuphezulu Akukho nanye   Indawo eqokelelweyo ≤3%
Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Indawo eqokelelweyo ≤0.05%   Indawo eqokelelweyo ≤3%
Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu Akukho nanye   Ubude obuqokelelweyo ≤1 ububanzi bewafer
Iitships zomphetho ngokukhanya okuphezulu Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2 mm   5 zivumelekile, ≤1 mm nganye
Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo Akukho nanye   Akukho nanye
Ukusasazeka kweSikrufu sokuNxibelelanisa ≤500 cm⁻² N / A  
Ukupakisha   Ikhasethi yewafer eninzi okanye isitya sewafer enye  

Ukusetyenziswa kwe-SiC wafer

 

  • Iimodyuli zamandla zeSiC Wafer zee-EV Inverters
    IiMOSFET kunye neediode ezisekelwe kwi-SiC wafer ezakhiwe kwi-substrates ze-SiC wafer ezikumgangatho ophezulu zizisa ilahleko yokutshintsha esezantsi kakhulu. Ngokusebenzisa itekhnoloji ye-SiC wafer, ezi modules zamandla zisebenza kwiivolthi eziphezulu kunye namaqondo obushushu, zivumela ii-inverters zokudonsa ezisebenzayo ngakumbi. Ukudibanisa ii-SiC wafer dies kwizigaba zamandla kunciphisa iimfuno zokupholisa kunye ne-footprint, kubonisa amandla apheleleyo okuvelisa i-SiC wafer.

  • Izixhobo zeRF kunye ne-5G eziQhelekileyo kwiSiC Wafer
    Ii-amplifiers ze-RF kunye neeswitshi ezenziwe kwiiplatifomu ze-SiC wafer ezigcina ubushushu obuphantsi zibonisa ukuhanjiswa kobushushu okuphezulu kunye ne-voltage yokuqhekeka. I-substrate ye-SiC wafer inciphisa ukulahleka kwe-dielectric kwiifrequency ze-GHz, ngelixa amandla ezinto ze-SiC wafer evumela ukusebenza okuzinzileyo phantsi kwamandla aphezulu, kunye neemeko zobushushu obuphezulu—okwenza i-SiC wafer ibe yi-substrate ekhethwayo kwizikhululo zesiseko ze-5G zesizukulwana esilandelayo kunye neenkqubo ze-radar.

  • Ii-Optoelectronic kunye nee-LED Substrates ezivela kwi-SiC Wafer
    Ii-LED eziluhlaza okwesibhakabhaka kunye ne-UV ezikhuliswe kwi-substrates ze-SiC wafer zixhamla kwi-lattice matching egqwesileyo kunye nokusasazwa kobushushu. Ukusebenzisa i-C-face SiC wafer ekhazimlisiweyo kuqinisekisa ukuba iileya ze-epitaxial ziyafana, ngelixa ubunzima be-SiC wafer buvumela ukuncitshiswa kwe-wafer encinci kunye nokupakishwa kwesixhobo okuthembekileyo. Oku kwenza i-SiC wafer ibe yindawo efanelekileyo yokusetyenziswa kwe-LED enamandla aphezulu, ubomi obude.

Imibuzo neempendulo zeSiC wafer

1. Q: Zenziwa njani ii-wafer zeSiC?


A:

Ii-wafer ze-SiC ezenziweyoAmanyathelo aneenkcukacha

  1. Iiwafer zeSiCUkulungiswa kwezinto eziluhlaza

    • Sebenzisa umgubo we-SiC we-≥5N-grade (ukungcola ≤1 ppm).
    • Hluza uze ubhake kwangaphambili ukuze ususe iikhompawundi zekhabhoni okanye zenitrogen eziseleyo.

  1. I-SiCUkulungiswa kweKrisimesi yeMbewu

    • Thatha iqhekeza lekristale enye ye-4H-SiC, uyinqumle ecaleni kwe-〈0001〉 ukuya kwi-~10 × 10 mm².

    • Ipolishi echanekileyo ibe yiRa ≤0.1 nm kwaye uphawule ulwalathiso lwekristale.

  2. I-SiCUkukhula kwePVT (Uthutho loMphunga oPhilayo)

    • Faka i-graphite crucible: ezantsi nge-SiC powder, phezulu nge-seed crystal.

    • Yisa kwi-10⁻³–10⁻⁵ Torr okanye ugcwalise nge-helium ecocekileyo kakhulu kwi-1 atm.

    • Fudumeza indawo yomthombo ukuya kwi-2100–2300 ℃, gcina indawo yembewu ipholile kwi-100–150 ℃.

    • Lawula izinga lokukhula kwi-1–5 mm/h ukuze ulinganise umgangatho kunye nomthamo.

  3. I-SiCIngot Annealing

    • Faka i-SiC ingot ekhulileyo kwi-1600–1800 ℃ kangangeeyure ezi-4–8.

    • Injongo: ukunciphisa uxinzelelo lobushushu kunye nokunciphisa uxinano lokusasazeka.

  4. I-SiCUkusikwa kweWafer

    • Sebenzisa isarha yentsimbi yedayimani ukuze usike i-ingot ibe zii-wafers ezinobukhulu obuyi-0.5–1 mm.

    • Nciphisa ukungcangcazela kunye namandla asecaleni ukuze uphephe ukuqhekeka okuncinci.

  5. I-SiCIsonka esisicabaUkusila nokupolisha

    • Ukugaya okurhabaxaukususa umonakalo wokusarha (uburhabaxa ~10–30 µm).

    • Ukusila kakuhleukufikelela ekubeni tyaba ≤5 µm.

    • Ukupholisha ngeKhemikhali-ngoMatshini (i-CMP)ukufikelela esiphelweni esifana nesipili (Ra ≤0.2 nm).

  6. I-SiCIsonka esisicabaUkucoca kunye nokuhlola

    • Ukucoca nge-ultrasonickwisisombululo sePiranha (H₂SO₄:H₂O₂), amanzi e-DI, emva koko IPA.

    • I-XRD/Raman spectroscopyukuqinisekisa i-polytype (4H, 6H, 3C).

    • I-Interferometryukulinganisa ubucaba (<5 µm) kunye ne-warp (<20 µm).

    • Iprobe enamanqaku amaneukuvavanya ukuxhathisa (umz. i-HPSI ≥10⁹ Ω·cm).

    • Ukuhlolwa kweempazamophantsi kwe-polarized light microscope kunye ne-scratch tester.

  7. I-SiCIsonka esisicabaUkwahlulahlula kunye nokuHlela

    • Hlela ii-wafers ngokwe-polytype kunye nohlobo lombane:

      • Uhlobo lwe-4H-SiC N (4H-N): uxinzelelo lomthwali 10¹⁶–10¹⁸ cm⁻³

      • I-4H-SiC High Purity Semi-Insulating (4H-HPSI): i-resistivity ≥10⁹ Ω·cm

      • Uhlobo lwe-6H-SiC N (6H-N)

      • Ezinye: 3C-SiC, P-type, njl.

  8. I-SiCIsonka esisicabaUkupakishwa kunye nokuthunyelwa

    • Beka kwiibhokisi zewafer ezicocekileyo nezingenathuli.

    • Bhala ibhokisi nganye ngobubanzi, ubukhulu, uhlobo lwepolytype, inqanaba lokumelana, kunye nenombolo yebhetshi.

      Iiwafer zeSiC

2. Q: Zeziphi iingenelo eziphambili zee-wafers zeSiC kunee-wafers zesilicon?


A: Xa kuthelekiswa nee-wafer ze-silicon, ii-wafer ze-SiC zivumela:

  • Ukusebenza kwe-voltage ephezulu(>1,200 V) kwaye ayixhathisi kakhulu.

  • Uzinzo oluphezulu lobushushu(>300 °C) kunye nolawulo oluphuculweyo lobushushu.

  • Isantya sokutshintsha esikhawulezayongokulahlekelwa okuncinci kokutshintsha, okunciphisa ukupholisa kwinqanaba lenkqubo kunye nobukhulu kwii-power converters.

4. Q: Zeziphi iziphene eziqhelekileyo ezichaphazela isivuno kunye nokusebenza kwe-SiC wafer?


A: Iziphene eziphambili kwii-wafers zeSiC ziquka ii-micropipes, i-basal plane dislocations (ii-BPD), kunye nemikrwelo yomphezulu. Ii-micropipes zinokubangela ukungasebenzi kakuhle kwesixhobo; ii-BPD ziyanda ukumelana nokuhamba kwexesha; kwaye imikrwelo yomphezulu ikhokelela ekuqhekekeni kwee-wafer okanye ukukhula okungalunganga kwe-epitaxial. Ukuhlolwa okungqongqo kunye nokunciphisa iziphene kubalulekile ke ngoko ukuze kuphuculwe isivuno se-wafer yeSiC.

Ixesha lokuthumela: Juni-30-2025
Cofa u-enter ukuze uphendle okanye ucofe u-ESC ukuze uvale