I-Silicon Carbide Ceramics vs. I-Silicon Carbide ye-Semiconductor: Isixhobo esifanayo kunye neendawo ezimbini ezihlukeneyo

1. IiMfuno eziDivergent zokucoceka kwiMathiriyeli ekrwada

 

I-SiC ye-Ceramic-grade ineemfuno ezithambileyo zokucoceka kwi-powder feedstock. Ngokuqhelekileyo, iimveliso zodidi lwezorhwebo kunye ne-90% -98% yococeko zinokuhlangabezana neemfuno ezininzi zesicelo, nangona ii-ceramics zesakhiwo ezinomgangatho ophezulu zingafuna i-98% -99.5% yococeko (umzekelo, i-SiC edibeneyo yokuphendula ifuna umxholo we-silicon olawulwayo). Ibekezelela ukungcola okuthile kwaye ngamanye amaxesha ibandakanya ngamabomu izixhobo ezincedisayo ezifana ne-aluminium oxide (Al₂O₃) okanye i-yttrium oxide (Y₂O₃) ukuphucula ukusebenza kwe-sintering, ukushisa okuphantsi kwe-sintering, kunye nokuphucula ubuninzi bemveliso yokugqibela.

 

I-Semiconductor-grade SiC ifuna amanqanaba akufutshane-agqibeleleyo okucoceka. I-Substrate-grade single crystal SiC idinga ≥99.9999% (6N) ukucoceka, kunye nezinye izicelo eziphezulu ezifuna i-7N (99.99999%) ubunyulu. I-Epitaxial layers kufuneka igcine iqondo lokungcola ngaphantsi kwe-10¹⁶ atoms/cm³ (ingakumbi inqanda ubumdaka obunzulu obufana no-B, Al, kunye no-V). Nokuba ukulandelela ukungcola okunje ngentsimbi (Fe), i-aluminiyam (Al), okanye i-boron (B) inokuchaphazela kakhulu iipropati zombane ngokubangela ukuba umthuthi usasazeke, ukunciphisa amandla entsimi yokuphuka, kwaye ekugqibeleni kubeke esichengeni ukusebenza kwesixhobo kunye nokuthembeka, kufuneke ulawulo olungqongqo lokungacoceki.

 

Izinto ze-silicon carbide semiconductor

 

2. Izakhelo zeCrystal ezahlukeneyo kunye noMgangatho

 

I-Ceramic-grade SiC ikhona ngokuyintloko njengepolycrystalline powder okanye imizimba edibeneyo eyenziwe ngee-microcrystals ze-SiC ezininzi ezijoliswe ngokungakhethiyo. Izinto eziphathekayo zinokuthi ziqulethe iipolytypes ezininzi (umzekelo, i-α-SiC, i-β-SiC) ngaphandle kokulawula okungqongqo kwiipolytypes ezithile, ngokugxininisa endaweni yobuninzi bezinto eziphathekayo kunye nokufana. Ubume bayo bangaphakathi bubonisa imida eninzi yeenkozo kunye ne-microscopic pores, kwaye inokuba nezixhobo zokuncedisa (umz., Al₂O₃, Y₂O₃).

 

I-Semiconductor-grade SiC kufuneka ibe yi-single-crystal substrates okanye i-epitaxial layers enezakhiwo ze-crystal ezicwangcisiweyo kakhulu. Ifuna iipolytypes ezithile ezifunyenwe ngeendlela ezichanekileyo zokukhula kwekristale (umzekelo, i-4H-SiC, i-6H-SiC). Iipropati zombane ezifana nokushukuma kwe-electron kunye ne-bandgap zinovakalelo olugqithisileyo kukhetho lwe-polytype, lufuna ulawulo olungqongqo. Okwangoku, i-4H-SiC ilawula imarike ngenxa yeempawu zayo zombane eziphezulu ezibandakanya ukuhamba okuphezulu kunye nokuhamba kwamandla entsimi, okwenza ukuba ilungele izixhobo zamandla.

 

3. Inkqubo Complexity Ukuthelekisa

 

I-SiC ye-Ceramic-grade isebenzisa iinkqubo zokuvelisa ezilula (ukulungisa umgubo → ukwenza → ukucwina), okufana "nokwenza izitena." Inkqubo ibandakanya:

 

• Ukuxuba i-powder-grade ye-SiC powder (ngokuqhelekileyo i-micron-size) kunye nezibophelelo
• Ukwenza ngokucofa
• Ubushushu obuphezulu be-sintering (1600-2200 ° C) ukufezekisa ukuxinana ngokusasazwa kwamasuntswana
  Uninzi lwezicelo zinokwaneliswa ngu> 90% woxinaniso. Yonke le nkqubo ayifuni ulawulo oluchanekileyo lokukhula kwekristale, endaweni yoko igxile ekwenziweni kunye nokuhambelana kwe-sintering. Izinto ezilungileyo zibandakanya ukuguquguquka kwenkqubo kwiimilo ezintsonkothileyo, nangona kukho iimfuno ezisezantsi zococeko.

 

I-SiC ye-Semiconductor-grade ibandakanya iinkqubo ezinzima kakhulu (ukulungiswa komgubo ococekileyo → ukukhula kwe-substrate yekristale enye → i-epitaxial wafer deposition → ukwenziwa kwesixhobo). Amanyathelo angundoqo aquka:

 

• Ukulungiswa kwesubstrate ngokuyintloko ngendlela yokuthutha umphunga womzimba (PVT).
• I-Sublimation ye-SiC powder kwiimeko ezinzima (2200-2400 ° C, i-vacuum ephezulu)
• Ulawulo oluchanekileyo lwemigangatho yobushushu (± 1 ° C) kunye neeparamitha zoxinzelelo
• Ukukhula kwe-Epitaxial layer ngokusebenzisa i-chemical vapor deposition (CVD) ukwenza umaleko ongqindilili olinganayo, one-doped (ngokuqhelekileyo eziliqela ukuya kumashumi eemicrons)
  Yonke le nkqubo ifuna iindawo ezicoceke kakhulu (umzekelo, amagumbi acocekileyo oKudidi lwe-10) ukunqanda ungcoliseko. Iimpawu zibandakanya ukuchaneka okugqithisileyo kwenkqubo, kufuna ulawulo phezu kwemimandla eshushu kunye namazinga okuhamba kwerhasi, kunye neemfuneko ezingqongqo zokucoceka kwezinto ezikrwada (> 99.9999%) kunye nobugocigoci bezixhobo.

 

4. Iiyantlukwano eziBalulekileyo zeendleko kunye nokuqhelaniswa neMarike

 

Iimpawu zeSiC zeCeramic:

• Imathiriyeli ekrwada: Umgubo wodidi lwentengiso
• Iinkqubo ezilula ngokwentelekiso
• Iindleko eziphantsi: Amawaka ukuya kumashumi amawaka e-RMB ngetoni nganye
• Usetyenziso olubanzi: Ii-abrasives, ii-refractories, kunye namanye amashishini angakhathaliyo

 

Iimpawu zeSiC zeSemiconductor:

• Imijikelo emide yokukhula kwe-substrate
• Umngeni wokulawula iziphene
• Amazinga esivuno esiphantsi
• Iindleko eziphezulu: Amawaka e-USD kwi-6-intshi substrate
• Iimarike ezigxilileyo: Izixhobo zombane ezisebenza ngokuphezulu njengezixhobo zamandla kunye namalungu eRF
  Ngophuhliso olukhawulezayo lwezithuthi zamandla amatsha kunye nonxibelelwano lwe-5G, imfuno yentengiso ikhula ngokukhawuleza.

 

5. Iimeko zeSicelo esahlukileyo

 

I-Ceramic-grade SiC isebenza "njengehashi lomsebenzi" ngokukodwa kwizicelo zesakhiwo. Ukusebenzisa iipropathi zayo ezigqwesileyo zoomatshini (ubunzima obuphezulu, ukuxhathisa ukunxiba) kunye neempawu zobushushu (ukumelana nobushushu obuphezulu, ukumelana ne-oxidation), iyagqwesa:

 

• Iibrasives (amavili okugaya, i-sandpaper)
• Iirefractories (iziko elinobushushu obuphezulu)
• Izinto ezinxitywayo/ezixhathisa ukubola (imizimba yempompo, iileyile zemibhobho)

 

I-silicon ye-carbide ye-ceramic structural components

 

I-SiC ye-Semiconductor-grade isebenza "njenge-electronic elite," isebenzisa iipropathi zayo ze-semiconductor ye-bandgap ebanzi ukubonisa iingenelo ezizodwa kwizixhobo zombane:

 

• Izixhobo zamandla: ii-EV inverters, iziguquli zegridi (ukuphucula ukusebenza kakuhle koguqulo lwamandla)
• Izixhobo ze-RF: Izikhululo zesiseko ze-5G, iinkqubo ze-radar (ukuvumela ukuhamba okuphezulu kokusebenza)
• I-Optoelectronics: I-Substrate imathiriyeli yee-LED eziluhlaza

 

I-200-millimeter ye-SiC epitaxial wafer

 

Ubungakanani	I-Ceramic-grade SiC	Semiconductor-grade SiC
Ulwakhiwo lweCrystal	Iipolycrystalline, iipolytypes ezininzi	Ikristale enye, iipolytypes ezikhethiweyo ngokungqongqo
Ugqaliselo lweNkqubo	Uxinaniso kunye nolawulo lokumila	Umgangatho weCrystal kunye nolawulo lwepropathi yombane
Umsebenzi oPhambili	Amandla omatshini, ukuxhathisa kwe-corrosion, ukuzinza kwe-thermal	Iipropati zombane (i-bandgap, ibala lokuqhekeka, njl.)
Iimeko zeSicelo	Amacandelo esakhiwo, amacandelo angagugiyo, amacandelo aphezulu obushushu	Izixhobo eziphezulu zamandla, izixhobo eziphezulu ze-frequency, izixhobo ze-optoelectronic
Iindleko Abaqhubi	Ukuguquguquka kwenkqubo, iindleko zempahla ekrwada	Izinga lokukhula kweCrystal, ukuchaneka kwezixhobo, ukucoceka kwezinto ezikrwada

 

Ngamafutshane, umahluko osisiseko uvela kwiinjongo zabo zokusebenza ezahlukileyo: iSiC ye-ceramic-grade isebenzisa "ifomu (isakhiwo)" ngelixa i-semiconductor-grade SiC isebenzisa "iipropathi (zombane)." Owangaphambili ulandelela iindleko ezisebenzayo zomatshini / ukusebenza kwe-thermal, ngelixa lo mva ubonisa i-pinacle ye-teknoloji yokulungiselela izinto eziphathekayo njengobunyulu obuphezulu, obunye-crystal obusebenzayo. Nangona ukwabelana ngemvelaphi yeekhemikhali ezifanayo, i-ceramic-grade kunye ne-semiconductor-grade SiC ibonisa umahluko ocacileyo kubunyulu, ubume bekristale, kunye neenkqubo zokuvelisa - kodwa zombini zenza igalelo elibalulekileyo kwimveliso yemizi-mveliso kunye nenkqubela phambili yezobuchwepheshe kwiindawo zabo.