I-Silicon Carbide Ceramics vs. I-Semiconductor I-Silicon Carbide: Izinto ezifanayo ezineZiphelo ezimbini ezahlukeneyo

1. Iimfuneko zoBumsulwa obuhlukeneyo kwiZinto eziluhlaza

 

I-SiC yodidi lwe-ceramic ineemfuno zobumsulwa obuthambileyo kwi-feedstock yayo ye-powder. Ngokwesiqhelo, iimveliso zodidi lwezorhwebo ezinobumsulwa obuyi-90%-98% zinokuhlangabezana neemfuno ezininzi zesicelo, nangona ii-ceramics zesakhiwo ezisebenza kakuhle zinokufuna ubumsulwa obuyi-98%-99.5% (umz., i-SiC ebophelelwe yi-reaction ifuna umxholo we-silicon okhululekileyo olawulwayo). Inyamezela ukungcola okuthile kwaye ngamanye amaxesha ngabom ifaka izixhobo zokuthambisa ezifana ne-aluminium oxide (Al₂O₃) okanye i-yttrium oxide (Y₂O₃) ukuphucula ukusebenza kokuthambisa, ukunciphisa amaqondo obushushu okuthambisa, kunye nokuphucula uxinano lwemveliso yokugqibela.

 

I-SiC ye-semiconductor-grade ifuna amanqanaba afanelekileyo okucoceka. I-SiC ye-substrate-grade single crystal ifuna ubumsulwa obuyi-≥99.9999% (6N), kunye nezinye izicelo eziphezulu ezifuna ubumsulwa obuyi-7N (99.99999%). Iileya ze-Epitaxial kufuneka zigcine amazinga okucoceka angaphantsi kwe-10¹⁶ atom/cm³ (ingakumbi ukuphepha ukungcola okunzulu okufana ne-B, Al, kunye ne-V). Nokuba ukungcola okuncinci okufana ne-iron (Fe), i-aluminium (Al), okanye i-boron (B) kunokuchaphazela kakhulu iipropati zombane ngokubangela ukusasazeka kwe-carrier, ukunciphisa amandla entsimi yokuqhekeka, kwaye ekugqibeleni kubeke emngciphekweni ukusebenza kwesixhobo kunye nokuthembeka, nto leyo ebangela ulawulo oluqinileyo lokucoceka.

 

Izinto ze-semiconductor ze-silicon carbide

 

2. Izakhiwo zeCrystal ezahlukeneyo kunye noMgangatho

 

I-SiC yodidi lwe-ceramic ifumaneka njenge-polycrystalline powder okanye imizimba e-sintered eyenziwe zii-microcrystals ezininzi ze-SiC ezijolise ngokungacwangciswanga. Le nto inokuba nee-polytypes ezininzi (umz., α-SiC, β-SiC) ngaphandle kolawulo oluqinileyo kwii-polytypes ezithile, endaweni yoko kugxininiswa kubuninzi bezinto kunye nokufana kwazo. Ulwakhiwo lwayo lwangaphakathi lunemida emininzi yeenkozo kunye nee-microscopic pores, kwaye inokuba nee-sintering aids (umz., Al₂O₃, Y₂O₃).

 

I-SiC ye-semiconductor-grade kufuneka ibe zi-substrates ze-single-crystal okanye ii-epitaxial layers ezinezakhiwo ze-crystal ezicwangcisiweyo kakhulu. Ifuna ii-polytypes ezithile ezifunyenwe ngeendlela zokukhula kwe-crystal ngokuchanekileyo (umz., 4H-SiC, 6H-SiC). Iimpawu zombane ezifana nokuhamba kwe-electron kunye ne-bandgap zinobuthathaka kakhulu ekukhetheni i-polytype, nto leyo edinga ulawulo olungqongqo. Okwangoku, i-4H-SiC ilawula imarike ngenxa yeempawu zayo zombane eziphezulu kubandakanya ukuhamba okuphezulu kwe-carrier kunye namandla e-field breakdown, okwenza ukuba ifaneleke kwizixhobo zamandla.

 

3. Uthelekiso lweNkqubo yoBunzima

 

I-SiC yodidi lwe-ceramic isebenzisa iinkqubo ezilula zokuvelisa (ukulungiswa komgubo → ukwenziwa → ukuhluza), efana "nokwenza izitena." Le nkqubo ibandakanya:

 

• Ukuxuba umgubo we-SiC okumgangatho wezorhwebo (oqhelekileyo ngobukhulu be-micron) kunye nee-binders
• Ukwenza ngokucinezela
• Ukutshisa okushushu okuphezulu (1600-2200°C) ukuze kufunyanwe uxinano ngokusasazwa kwamasuntswana
  Uninzi lwezicelo lunokwaneliswa yi->90% yoxinano. Yonke le nkqubo ayifuni ulawulo oluchanekileyo lokukhula kwekristale, endaweni yoko igxile ekwakhekeni nasekuguquguqukeni kokunyibilikisa. Iingenelo ziquka ukuguquguquka kwenkqubo kwiimilo ezintsonkothileyo, nangona kukho iimfuno zobumsulwa obuphantsi.

 

I-SiC ye-semiconductor-grade ibandakanya iinkqubo ezintsonkothileyo kakhulu (ukulungiswa komgubo ococekileyo kakhulu → ukukhula kwe-substrate yekristale enye → ukufakwa kwe-epitaxial wafer → ukwenziwa kwesixhobo). Amanyathelo aphambili aquka:

 

• Ukulungiswa kwe-substrate ikakhulu ngendlela yokuthutha umphunga ngokwasemzimbeni (PVT)
• Ukufakwa komgubo weSiC phantsi kweemeko ezinzima kakhulu (2200-2400°C, i-vacuum ephezulu)
• Ulawulo oluchanekileyo lwee-gradients zobushushu (±1°C) kunye neeparameter zoxinzelelo
• Ukukhula komaleko we-Epitaxial nge-chemical vapor deposition (CVD) ukwenza umaleko ongqindilili, oxutywe ngokulinganayo (ngesiqhelo ukusuka kwii-microns ezininzi ukuya kwi-tens)
  Yonke le nkqubo ifuna iindawo ezicocekileyo kakhulu (umz., amagumbi okucoca eKlasi le-10) ukuthintela ungcoliseko. Iimpawu ziquka ukuchaneka okugqithisileyo kwenkqubo, okufuna ulawulo lwamasimi obushushu kunye namazinga okuhamba kwegesi, kunye neemfuno ezingqongqo zokucoceka kwezinto eziluhlaza (>99.9999%) kunye nobunzima bezixhobo.

 

4. Umahluko obalulekileyo kwiindleko kunye neendlela zokuthengisa

 

Iimpawu zeSiC zeCeramic-grade:

• Izinto eziluhlaza: Umgubo wezinga lorhwebo
• Iinkqubo ezilula kakhulu
• Ixabiso eliphantsi: Amawaka ukuya kumashumi amawaka e-RMB ngetoni nganye
• Izicelo ezibanzi: Ii-Abrasives, ii-refractories, kunye nezinye iimboni ezixabisa kakhulu

 

Iimpawu zeSiC ze-semiconductor-grade:

• Imijikelo emide yokukhula kwe-substrate
• Ulawulo olunzima lweziphene
• Amaxabiso emveliso aphantsi
• Ixabiso eliphezulu: Amawaka ee-USD nge-substrate ye-6-intshi nganye
• Iimarike ezigxile kuzo: Izixhobo ze-elektroniki ezisebenza kakuhle njengezixhobo zamandla kunye nezixhobo ze-RF
  Ngophuhliso olukhawulezileyo lwezithuthi ezintsha zamandla kunye nonxibelelwano lwe-5G, imfuno yemarike ikhula ngokukhawuleza.

 

5. Imizekelo yesicelo esahlukileyo

 

I-SiC yodidi lwe-ceramic isebenza njenge "ihashe lomsebenzi wezoshishino" ngokuyintloko kwiindlela zokwakha. Isebenzisa iipropati zayo ezintle zoomatshini (ubulukhuni obuphezulu, ukumelana nokuguguleka) kunye neepropati zobushushu (ukumelana nobushushu obuphezulu, ukumelana nokuxinana), igqwesa kwezi zinto zilandelayo:

 

• Ii-abrasives (amavili okusila, iphepha lokusanda)
• Izinto ezirhabaxa (ii-linings ze-oven ezishushu kakhulu)
• Izinto ezimelana nokuguguleka/ukugqwala (imizimba yepompo, iilingi zepayipi)

 

Izixhobo zesakhiwo se-silicon carbide ceramic

 

I-SiC ye-semiconductor-grade isebenza njenge-"electronic elite," isebenzisa iipropati zayo ze-semiconductor ezibanzi ze-bandgap ukubonisa iingenelo ezikhethekileyo kwizixhobo ze-elektroniki:

 

• Izixhobo zamandla: ii-EV inverters, iigridi converters (ukuphucula ukusebenza kakuhle kokuguqulwa kwamandla)
• Izixhobo zeRF: Izikhululo zesiseko ze-5G, iinkqubo zerada (ezivumela amaza okusebenza aphezulu)
• I-Optoelectronics: Izinto ezingaphantsi komhlaba ze-LED eziluhlaza okwesibhakabhaka

 

I-wafer ye-epitaxial ye-SiC epitaxial engama-200-millimeter

 

Ubukhulu	I-SiC yodidi lwe-ceramic	I-SiC yebanga le-semiconductor
Ulwakhiwo lwekristale	Iipolycrystalline, iipolytypes ezininzi	Iikristale enye, iipolytypes ezikhethwe ngokungqongqo
Ukugxila kwiNkqubo	Uxinano kunye nolawulo lwemilo	Umgangatho wekristale kunye nolawulo lwepropathi yombane
Eyona nto iphambili ekusebenzeni	Amandla oomatshini, ukumelana nokugqwala, uzinzo lobushushu	Iipropati zombane (i-bandgap, intsimi yokuqhekeka, njl.njl.)
Imizekelo yesicelo	Izinto ezisetyenziswa kwisakhiwo, izinto ezinganyangekiyo, izinto ezisetyenziswa kwiqondo lobushushu eliphezulu	Izixhobo ezinamandla aphezulu, izixhobo ezisebenzisa amaza amaninzi, izixhobo ze-optoelectronic
Abaqhubi beendleko	Ukuguquguquka kwenkqubo, iindleko zezinto eziluhlaza	Izinga lokukhula kwekristale, ukuchaneka kwezixhobo, ubumsulwa bezinto ezikrwada

 

Ngamafutshane, umahluko osisiseko uvela kwiinjongo zazo ezahlukeneyo zokusebenza: i-SiC ye-ceramic-grade isebenzisa "imo (isakhiwo)" ngelixa i-SiC ye-semiconductor-grade isebenzisa "iipropati (zombane)." Eyokuqala ilandela ukusebenza koomatshini/ubushushu okungabizi kakhulu, ngelixa eyesibini imele eyona nto iphambili kubuchwepheshe bokulungiselela izinto njengezinto ezicocekileyo kakhulu, ezisebenzayo zekristale enye. Nangona zabelana ngemvelaphi efanayo yeekhemikhali, i-SiC ye-ceramic-grade kunye ne-semiconductor-grade zibonisa umahluko ocacileyo kubunyulu, ulwakhiwo lwekristale, kunye neenkqubo zokuvelisa - kodwa zombini zenza igalelo elikhulu kwimveliso yemizi-mveliso kunye nophuhliso lobuchwepheshe kwiindawo zazo.