Ngomhla wama-26, iPower Cube Semi ibhengeze uphuhliso oluyimpumelelo lwe-2300V SiC yokuqala yaseMzantsi Korea (iSilicon Carbide) semiconductor yeMOSFET.
Xa kuthelekiswa ne-Si (i-Silicon) ekhoyo esekelwe kwi-semiconductors, i-SiC (i-Silicon Carbide) inokumelana nombane ophezulu, ngenxa yoko inconywa njengesixhobo sesizukulwana esilandelayo esikhokelela kwixesha elizayo le-semiconductors yamandla. Isebenza njengecandelo elibalulekileyo elifunekayo ekuqaliseni itekhnoloji ye-cutting-edge, efana nokwanda kwezithuthi zombane kunye nokwandiswa kwamaziko edatha aqhutywa bubulumko bokwenziwa.
Power Cube Semi yinkampani fabless ephuhlisa izixhobo semiconductor amandla kwiindidi ezintathu eziphambili: SiC (Silicon Carbide), Si (Silicon), kunye Ga2O3 (Gallium Oxide). Kungekudala, inkampani ifake isicelo kwaye yathengisa i-Schottky Barrier Diodes (SBDs) ephezulu kwinkampani yemoto yombane yehlabathi e-China, ifumana ukuqatshelwa koyilo lwe-semiconductor kunye nobuchwepheshe.
Ukukhutshwa kwe-2300V SiC MOSFET kuyaphawuleka njengetyala lokuqala lophuhliso eMzantsi Korea. I-Infineon, inkampani ye-semiconductor yamandla ehlabathi esekelwe eJamani, iphinde yazisa ukuqaliswa kwemveliso yayo ye-2000V ngo-Matshi, kodwa ngaphandle kwemveliso ye-2300V.
I-Infineon's 2000V CoolSiC MOSFET, isebenzisa iphakheji ye-TO-247PLUS-4-HCC, ihlangabezana nemfuno yokwanda koxinzelelo lwamandla phakathi kwabaqulunqi, iqinisekisa ukuthembeka kwenkqubo naphantsi kweemeko ezingqongqo zombane kunye neemeko zokutshintsha amaza.
I-CoolSiC MOSFET ibonelela ngombane othe ngqo othe ngqo wekhonkco langoku, evumela ukunyuka kwamandla ngaphandle kokunyuka kwangoku. Sisixhobo sokuqala esine-silicon carbide sokuqala kwimarike esinombane wokudilika we-2000V, sisebenzisa iphakheji ye-TO-247PLUS-4-HCC enomgama we-creepage we-14mm kunye nokukhutshwa kwe-5.4mm. Ezi zixhobo zibonakalisa ilahleko ephantsi yokutshintsha kwaye zifanelekile kwizicelo ezifana ne-solar string inverters, iinkqubo zokugcina amandla, kunye nokutshaja isithuthi sombane.
Uluhlu lweemveliso ze-CoolSiC MOSFET 2000V zifanelekile kwiinkqubo zebhasi ze-DC eziphezulu ze-voltage ukuya kwi-1500V DC. Xa kuthelekiswa ne-1700V SiC MOSFET, esi sixhobo sibonelela ngomlinganiselo owaneleyo we-overvoltage kwiinkqubo ze-1500V DC. I-CoolSiC MOSFET ibonelela nge-4.5V threshold voltage kwaye iza ixhotyiswe nge-diode yomzimba eyomeleleyo yokutshintsha nzima. Ngeteknoloji yoqhagamshelwano lwe.XT, la macandelo anika ukusebenza kakuhle kwe-thermal kunye nokumelana nokufuma okuqinileyo.
Ukongeza kwi-2000V CoolSiC MOSFET, i-Infineon kungekudala iza kuphehlelela ii-CoolSiC diode ezincedisayo ezipakishwe kwii-TO-247PLUS 4-pin kunye ne-TO-247-2 iiphakheji kwikota yesithathu ka-2024 nakwikota yokugqibela ka-2024, ngokulandelelanayo. Ezi diode zifanelekile ngokukodwa kwizicelo zelanga. Ukudibanisa imveliso yomqhubi wesango indibaniselwano nazo ziyafumaneka.
Uthotho lweemveliso zeCoolSiC MOSFET 2000V ngoku ziyafumaneka kwimarike. Ngaphaya koko, i-Infineon ibonelela ngeebhodi zovavanyo ezifanelekileyo: EVAL-COOLSIC-2KVHCC. Abaphuhlisi banokusebenzisa le bhodi njengeqonga elichanekileyo lovavanyo jikelele lokuvavanya zonke ii-CoolSiC MOSFETs kunye neediode ezilinganiswe kwi-2000V, kunye ne-EiceDRIVER compact single-channel isolation gate driver 1ED31xx series product ngokusebenzisa i-dual-pulse okanye i-PWM eqhubekayo yokusebenza.
UGung Shin-soo, iGosa eliPhezulu leTekhnoloji yePower Cube Semi, uthe, "Sikwazile ukwandisa amava ethu akhoyo kuphuhliso kunye nokuveliswa kobuninzi be-1700V SiC MOSFETs ukuya kwi-2300V.
Ixesha lokuposa: Apr-08-2024