Ngomhla wama-26, iPower Cube Semi ibhengeze uphuhliso oluphumeleleyo lwe-semiconductor yokuqala ye-2300V SiC (Silicon Carbide) MOSFET yaseMzantsi Korea.
Xa kuthelekiswa nee-semiconductors ezisekelwe kwi-Si (Silicon) ezikhoyo, i-SiC (Silicon Carbide) inokumelana nee-voltage eziphezulu, yiyo loo nto ibizwa ngokuba sisixhobo sesizukulwana esilandelayo esikhokela ikamva lee-semiconductors zamandla. Isebenza njengecandelo elibalulekileyo elifunekayo ekuqaliseni ubuchwepheshe obuphambili, njengokwanda kwezithuthi zombane kunye nokwandiswa kwamaziko edatha aqhutywa bubukrelekrele bokwenziwa.
I-Power Cube Semi yinkampani engenambali ephuhlisa izixhobo ze-semiconductor zamandla kwiindidi ezintathu eziphambili: i-SiC (Silicon Carbide), i-Si (Silicon), kunye ne-Ga2O3 (Gallium Oxide). Kutshanje, le nkampani isebenzise kwaye ithengise ii-Schottky Barrier Diodes (SBDs) ezinomthamo ophezulu kwinkampani yezithuthi zombane yehlabathi eTshayina, yafumana udumo ngoyilo lwayo kunye netekhnoloji ye-semiconductor.
Ukukhutshwa kwe-2300V SiC MOSFET kuyaphawuleka njengetyala lokuqala lophuhliso olunjalo eMzantsi Korea. I-Infineon, inkampani yehlabathi esebenza nge-semiconductor yamandla eseJamani, ikwabhengeze ukuqaliswa kwemveliso yayo ye-2000V ngoMatshi, kodwa ngaphandle koluhlu lwemveliso ye-2300V.
I-Infineon's 2000V CoolSiC MOSFET, esebenzisa iphakheji ye-TO-247PLUS-4-HCC, ihlangabezana neemfuno zokwanda koxinano lwamandla phakathi kwabayili, iqinisekisa ukuthembeka kwenkqubo naphantsi kweemeko ezinzima ze-voltage ephezulu kunye ne-switching frequency.
I-CoolSiC MOSFET inikezela nge-voltage ephezulu yokudibanisa umbane ngqo, evumela ukwanda kwamandla ngaphandle kokunyuka kombane. Sisixhobo sokuqala se-silicon carbide esithengiswayo esinombane wokuqhekeka we-2000V, sisebenzisa iphakheji ye-TO-247PLUS-4-HCC enomgama we-creepage we-14mm kunye ne-clearance ye-5.4mm. Ezi zixhobo zinelahleko eziphantsi zokutshintsha kwaye zifanelekile kwizicelo ezinje ngee-solar string inverters, iinkqubo zokugcina amandla, kunye nokutshaja kwezithuthi zombane.
Uthotho lweemveliso zeCoolSiC MOSFET 2000V lufanelekile kwiinkqubo zebhasi zeDC ezine-voltage ephezulu ukuya kuthi ga kwi-1500V DC. Xa kuthelekiswa ne-1700V SiC MOSFET, esi sixhobo sibonelela nge-overvoltage margin eyaneleyo kwiinkqubo ze-1500V DC. ICoolSiC MOSFET ine-voltage yomyinge we-4.5V kwaye ixhotyiswe ngee-diode zomzimba eziqinileyo zokutshintsha ngamandla. Ngobuchwepheshe boqhagamshelo lwe-.XT, ezi zinto zibonelela ngokusebenza kakuhle kobushushu kunye nokumelana nokufuma okunamandla.
Ukongeza kwi-2000V CoolSiC MOSFET, i-Infineon iza kuqalisa kungekudala ii-CoolSiC diodes ezongezelelweyo ezipakishwe kwiipakethe ze-TO-247PLUS ezine-pin ezi-4 kunye ne-TO-247-2 kwikota yesithathu ka-2024 nakwikota yokugqibela ka-2024, ngokwahlukeneyo. Ezi diodes zilungele ngokukodwa ukusetyenziswa kwelanga. Iindidi zeemveliso zomqhubi wesango ezifanayo nazo ziyafumaneka.
Uthotho lweemveliso zeCoolSiC MOSFET 2000V ngoku luyafumaneka kwimarike. Ngaphezu koko, i-Infineon inikezela ngeebhodi zovavanyo ezifanelekileyo: i-EVAL-COOLSIC-2KVHCC. Abaphuhlisi banokusebenzisa le bhodi njengeqonga lovavanyo oluchanekileyo ukuvavanya zonke ii-CoolSiC MOSFET kunye nee-diode ezilinganiswe kwi-2000V, kunye ne-EiceDRIVER compact single-channel isolation gate driver 1ED31xx product series ngokusebenzisa i-dual-pulse okanye i-continuous PWM operation.
UGung Shin-soo, iGosa eliyiNtloko leTekhnoloji kwiPower Cube Semi, uthe, "Sikwazile ukwandisa amava ethu akhoyo ekuphuhliseni nasekuveliseni ngobuninzi ii-1700V SiC MOSFETs ukuya kwi-2300V."
Ixesha lokuthumela: Epreli-08-2024