Ii-Semiconductor Substrates kunye ne-Epitaxy: Iziseko zoBugcisa eziSebenza kwiZixhobo zaMandla zanamhlanje kunye neRF

Inkqubela phambili kwitekhnoloji ye-semiconductor ichazwa ngakumbi ziimpumelelo kwiindawo ezimbini ezibalulekileyo:ii-substrateskwayeiileya ze-epitaxialEzi nxalenye zimbini zisebenza kunye ukumisela ukusebenza kombane, ubushushu, kunye nokuthembeka kwezixhobo eziphambili ezisetyenziswa kwizithuthi zombane, izikhululo zesiseko ze-5G, izixhobo ze-elektroniki zabathengi, kunye neenkqubo zonxibelelwano lwe-optical.

Nangona i-substrate ibonelela ngesiseko esibonakalayo nesikristale, umaleko we-epitaxial wenza isiseko esisebenzayo apho kwakhiwa khona indlela yokusebenza ye-high-frequency, high-power, okanye i-optoelectronic. Ukuhambelana kwazo—ukulungelelaniswa kwekristale, ukwanda kobushushu, kunye neempawu zombane—kubalulekile ekuphuhliseni izixhobo ezisebenza kakuhle, ezitshintsha ngokukhawuleza, kunye nokonga amandla okukhulu.

Eli nqaku lichaza indlela ezisebenza ngayo ii-substrates kunye neetekhnoloji ze-epitaxial, isizathu sokuba zibalulekile, kunye nendlela ezibumba ngayo ikamva lezixhobo ze-semiconductor ezifanaI-Si, i-GaN, i-GaAs, i-sapphire, kunye ne-SiC.

1. Yintoni iI-Substrate ye-semiconductor?

I-substrate yi-"platform" enye yekristale apho kwakhiwe khona isixhobo. Inika inkxaso yesakhiwo, ukusasazwa kobushushu, kunye netemplate yeathomu efunekayo ekukhuleni kwe-epitaxial esemgangathweni ophezulu.

Imisebenzi ephambili yeSubstrate

• Inkxaso yoomatshini:Iqinisekisa ukuba isixhobo sihlala sizinzile ngokwesakhiwo ngexesha lokucubungula nokusebenza.

• Itemplate yekristale:Ikhokela umaleko we-epitaxial ukuba ukhule ngee-lattices ze-atomic ezilungelelanisiweyo, inciphisa iziphene.

• Indima yombane:Ingaqhuba umbane (umz., Si, SiC) okanye isebenze njenge-insulator (umz., isafire).

Izinto ezisetyenziswa rhoqo kwi-substrate

Indlela Ezenziwa Ngayo Izinto Ezingaphantsi

1. Ukucocwa kwezinto:I-silicon okanye ezinye izinto ezidityanisiweyo zicocwa zibe msulwa kakhulu.

2. Ukukhula kwekristale enye:

   • ICzochralski (CZ)– indlela eqhelekileyo yokwenza i-silicon.

   • Indawo yokudada (FZ)– ivelisa iikristale ezicocekileyo kakhulu.

3. Ukusikwa nokupolisha iwafer:Iibhola zinqunyulwa zibe zii-wafers kwaye zicoliwe ukuze zibe bushelelezi.

4. Ukucoca nokuhlola:Ukususa izinto ezingcolisayo nokuhlola ubuninzi beziphene.

Imingeni yoBugcisa

Ezinye izinto eziphucukileyo—ingakumbi iSiC—kunzima ukuzenza ngenxa yokukhula kancinci kwekristale (kuphela yi-0.3–0.5 mm/iyure), iimfuno zokulawula ubushushu obuqinileyo, kunye nokulahleka okukhulu kokusika (ukulahleka kwe-SiC kerf kunokufikelela kwi->70%). Olu bunzima sesinye sezizathu zokuba izinto zesizukulwana sesithathu zihlale zibiza kakhulu.

2. Yintoni i-Epitaxial Layer?

Ukukhulisa umaleko we-epitaxial kuthetha ukubeka ifilimu encinci, ecocekileyo kakhulu, enekristale enye kwisiseko esine-lattice orientation ehambelana ngokugqibeleleyo.

Umaleko we-epitaxial umiselaukuziphatha kombaneyesixhobo sokugqibela.

Kutheni i-Epitaxy ibalulekile

• Yandisa ubunyulu bekristale

• Ivumela iiprofayili zokusebenzisa iziyobisi ezenzelwe wena

• Iyanciphisa ukwanda kweziphene ze-substrate

• Yenza izakhiwo ezidityanisiweyo ezifana ne-quantum wells, ii-HEMTs, kunye nee-superlattices

Iiteknoloji eziphambili ze-Epitaxy

Iiparameter ezibalulekileyo kwi-Epitaxy

• Ubukhulu beleya:Iinanometers ze-quantum wells, ukuya kuthi ga kwi-100 μm kwizixhobo zamandla.

• Unyango lweziyobisi:Ilungisa uxinaniso lomthwali ngokungenisa ngokuchanekileyo ukungcola.

• Umgangatho wojongano:Kufuneka kuncitshiswe ukushiyeka kunye noxinzelelo oluvela ekungahambelani kakuhle kwelatisi.

Imingeni kwiHeteroepitaxy

• Ukungafani kweLattice:Umzekelo, ukungafani kweGaN kunye nesafire nge ~13%.

• Ukungalingani kokwandiswa kobushushu:Ingabangela ukuqhekeka ngexesha lokupholisa.

• Ulawulo olugqibeleleyo lweziphene:Ifuna iileya ze-buffer, iileya ezilinganisiweyo, okanye iileya ze-nucleation.

3. Indlela i-Substrate kunye ne-Epitaxy ezisebenzisana ngayo: Imizekelo yokwenyani

I-GaN LED kwiSapphire

• I-Sapphire ayibizi kakhulu kwaye iyakhusela.

• Iileya ze-Buffer (i-AlN okanye i-GaN enobushushu obuphantsi) zinciphisa ukungalingani kwe-lattice.

• Ii-multi-quantum wells (InGaN/GaN) zenza ummandla okhupha ukukhanya okusebenzayo.

• Ifikelela kubuninzi beziphene obungaphantsi kwe-10⁸ cm⁻² kunye nokusebenza kakuhle kokukhanya okuphezulu.

I-SiC Power MOSFET

• Isebenzisa ii-substrates ze-4H-SiC ezinokukwazi ukuqhekeza kakhulu.

• Iileya ze-Epitaxial drift (10–100 μm) zimisela umlinganiselo we-voltage.

• Ibonelela ngokulahleka kokuqhuba okuphantsi kwe-~90% kunezixhobo zamandla ze-silicon.

Izixhobo ze-GaN-on-Silicon RF

• Ii-substrates ze-silicon zinciphisa iindleko kwaye zivumela ukuhlanganiswa ne-CMOS.

• Iileya ze-AlN nucleation kunye nee-buffers ezenziwe ngobunjineli zilawula uxinzelelo.

• Isetyenziselwa iitships ze-5G PA ezisebenza kumaza e-millimeter-wave.

4. I-Substrate vs. Epitaxy: Umahluko oPhambili

5. Apho Ezi Technologies Ziya Khona

Ubungakanani obukhulu beWafer

• Ukutshintsha ukuya kwi-intshi ezili-12

• I-SiC isuka kwi-intshi ezi-6 ukuya kwi-intshi ezi-8 (ukunciphisa okukhulu kweendleko)

• Ububanzi obukhulu buphucula amandla okukhupha kunye neendleko zesixhobo eziphantsi

I-Heteroepitaxy enexabiso eliphantsi

I-GaN-on-Si kunye ne-GaN-on-sapphire ziyaqhubeka zifumana ukuthandwa njengendlela enokusetyenziselwa ezinye iindlela ze-GaN substrates ezibizayo.

Iindlela Eziphambili Zokusika Nokukhulisa

• Ukusikwa okuqhekekileyo okubandayo kunokunciphisa ukulahleka kwe-SiC kerf ukusuka kwi-~75% ukuya kwi-~50%.

• Uyilo lwe-furnace oluphuculweyo lunyusa isivuno se-SiC kunye nokufana.

Ukuhlanganiswa kweMisebenzi ye-Optical, Power, kunye ne-RF

I-Epitaxy ivumela i-quantum wells, ii-superlattices, kunye nee-layers ezixineneyo ezibalulekileyo kwi-photonics edibeneyo yexesha elizayo kunye ne-electronics yamandla esebenza kakuhle.

Isiphelo

Iisubstrates kunye ne-epitaxy zenza umqolo wetekhnoloji wee-semiconductors zanamhlanje. I-substrate ibeka isiseko somzimba, sobushushu, kunye nesekristale, ngelixa umaleko we-epitaxial uchaza imisebenzi yombane evumela ukusebenza kwesixhobo esiphambili.

Njengoko imfuno ikhulaamandla aphezulu, i-frequency ephezulu, kunye nokusebenza kakuhle okuphezuluiinkqubo—ukusuka kwizithuthi zombane ukuya kumaziko edatha—ezi teknoloji zimbini ziya kuqhubeka zikhula kunye. Utshintsho kubungakanani be-wafer, ulawulo lweziphene, i-heteroepitaxy, kunye nokukhula kwekristale kuya kuyila isizukulwana esilandelayo sezixhobo ze-semiconductor kunye noyilo lwezixhobo.