Ukucoca ngamanzi (Wet Clean) lelinye lamanyathelo abalulekileyo kwiinkqubo zokwenziwa kwee-semiconductor, elijolise ekususeni izinto ezahlukeneyo ezingcolisayo kumphezulu we-wafer ukuqinisekisa ukuba amanyathelo alandelayo enkqubo anokwenziwa kumphezulu ococekileyo.
Njengoko ubungakanani bezixhobo ze-semiconductor buqhubeka buncipha kwaye iimfuno zokuchaneka zisanda, iimfuno zobugcisa zeenkqubo zokucoca i-wafer ziye zaba nzima ngakumbi. Kwanamasuntswana amancinci, izinto eziphilayo, ii-ion zesinyithi, okanye iintsalela ze-oxide kumphezulu we-wafer zinokuchaphazela kakhulu ukusebenza kwesixhobo, ngaloo ndlela zichaphazela imveliso kunye nokuthembeka kwezixhobo ze-semiconductor.
Imigaqo ephambili yokucoca iWafer
Eyona nto iphambili ekucoceni i-wafer kukushenxisa ngokufanelekileyo izinto ezahlukeneyo ezingcolisayo kumphezulu we-wafer ngeendlela ezibonakalayo, iikhemikhali, kunye nezinye iindlela ukuqinisekisa ukuba i-wafer inomphezulu ococekileyo ofanelekileyo wokulungiswa kamva.
Uhlobo longcoliseko
Iimpembelelo Eziphambili kwiimpawu zeSixhobo
| inqaku Ungcoliseko | Iziphene zepateni
Iziphene zokufakelwa kwe-ion
Iziphene zokuqhekeka kwefilimu yokukhusela
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| Ungcoliseko lwesinyithi | Iintsimbi zeAlkali | Ukungazinzi kwe-transistor ye-MOS
Ukwaphuka/ukubola kwefilimu ye-okside yesango
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| Iintsimbi Ezinzima | Ukwanda kwe-PN junction reverse leaking current
Iziphene zokuqhekeka kwefilimu ye-okside yesango
Ukonakala kobomi benkampani encinci
Ukuveliswa kweziphene zomaleko wokuvusa i-oxide
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| Ungcoliseko lweekhemikhali | Izinto ze-Organic | Iziphene zokuqhekeka kwefilimu ye-okside yesango
Iinguqu zefilimu ye-CVD (amaxesha okufukama)
Ukwahluka kobukhulu befilimu ye-okside yobushushu (i-oxidation ekhawulezileyo)
Ukwenzeka kombala womkhenkce (isitya, ilensi, isibuko, imaski, i-reticle)
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| Izinto ezingaphiliyo (B, P) | I-MOS transistor Vth itshintsha
Ukwahluka kwe-Si substrate kunye nokumelana okuphezulu kwe-poly-silicon sheet resistance
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| Iisiseko ze-Inorganic (ii-amine, i-ammonia) kunye nee-Acids (SOx) | Ukuwohloka kwesisombululo see-resist ezikhuliswe ngamakhemikhali
Ukuvela kongcoliseko lwamasuntswana kunye nomhlwa ngenxa yokuveliswa kwetyuwa
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| Iifilimu ze-Oxide zeNdalo nezeeKhemikhali ngenxa yokufuma, umoya | Ukwanda kokumelana noqhagamshelwano
Ukwaphuka/ukubola kwefilimu ye-okside yesango
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Ngokukodwa, iinjongo zenkqubo yokucoca i-wafer ziquka:
Ukususwa kwamasuntswana: Ukusebenzisa iindlela zomzimba okanye zeekhemikhali ukususa amasuntswana amancinci anamathele kumphezulu we-wafer. Amasuntswana amancinci kunzima ukuwasusa ngenxa yamandla aqinileyo e-electrostatic phakathi kwawo nomphezulu we-wafer, nto leyo efuna unyango olukhethekileyo.
Ukususwa kwezinto eziphilayo: Izinto eziphilayo ezingcolisayo ezifana negrisi kunye neentsalela ze-photoresist zinokunamathela kumphezulu we-wafer. Ezi zinto zingcolisayo zihlala zisuswa kusetyenziswa ii-oxidizing agents ezinamandla okanye izinyibilikisi.
Ukususwa kwee-ion zesinyithi: Iintsalela zee-ion zesinyithi kumphezulu we-wafer zingonakalisa ukusebenza kombane kwaye zichaphazele namanyathelo okucubungula alandelayo. Ke ngoko, izisombululo ezithile zeekhemikhali zisetyenziselwa ukususa ezi ion.
Ukususwa kweOkside: Ezinye iinkqubo zifuna ukuba umphezulu we-wafer ungabi nazingqimba ze-oxide, ezifana ne-silicon oxide. Kwiimeko ezinjalo, izingqimba ze-oxide yendalo kufuneka zisuswe ngexesha lokucoca okuthile.
Umngeni wetekhnoloji yokucoca iiwafer usekususeni ngokufanelekileyo izinto ezingcolisayo ngaphandle kokuchaphazela kakubi umphezulu wewafer, njengokuthintela ukurhawuzelela komphezulu, ukugqwala, okanye omnye umonakalo emzimbeni.
2. Inkqubo yokucoca iWafer
Inkqubo yokucoca i-wafer idla ngokubandakanya amanyathelo amaninzi ukuqinisekisa ukususwa ngokupheleleyo kwezinto ezingcolisayo kunye nokufikelela kumphezulu ococekileyo ngokupheleleyo.
Umfanekiso: Uthelekiso Phakathi kohlobo lweBatch kunye nokuCoca iSingle-Wafer
Inkqubo eqhelekileyo yokucoca i-wafer ibandakanya la manyathelo aphambili alandelayo:
1. Ukucoca Ngaphambi Kokuba Ucoce (Ngaphambi Kokuba Ucoce)
Injongo yokucoca kwangaphambili kukususa ukungcola okukhululekileyo kunye namaqhekeza amakhulu kumphezulu we-wafer, okwenziwa ngokuhlanjwa ngamanzi acocekileyo (i-DI Water) kunye nokucoca nge-ultrasound. Amanzi acocekileyo anokususa amaqhekeza kunye nokungcola okunyibilikisiweyo kumphezulu we-wafer, ngelixa ukucoca nge-ultrasound kusebenzisa iziphumo ze-cavitation ukuphula unxibelelwano phakathi kwamaqhekeza kunye nomphezulu we-wafer, okwenza kube lula ukuwakhupha.
2. Ukucoca iikhemikhali
Ukucoca ngamakhemikhali yenye yeendlela eziphambili kwinkqubo yokucoca i-wafer, kusetyenziswa izisombululo zamakhemikhali ukususa izinto eziphilayo, ii-ion zesinyithi, kunye nee-oxide kumphezulu we-wafer.
Ukususwa kwezinto eziphilayo: Ngokwesiqhelo, i-acetone okanye umxube we-ammonia/peroxide (SC-1) usetyenziselwa ukunyibilikisa nokuxovula izinto eziphilayo. Umlinganiselo oqhelekileyo wesisombululo se-SC-1 yi-NH₄OH
₂O₂
₂O = 1:1:5, kunye nobushushu obusebenzayo obumalunga nama-20°C.
Ukususwa kwee-Ion zeMetal: I-Nitric acid okanye i-hydrochloric acid/peroxide mixtures (SC-2) zisetyenziselwa ukususa ii-ion zemetal kumphezulu we-wafer. Umlinganiselo oqhelekileyo wesisombululo se-SC-2 yi-HCl
₂O₂
₂O = 1:1:6, kunye nobushushu obuhlala bumalunga nama-80°C.
Ukususwa kweOkside: Kwezinye iinkqubo, kufuneka kususwe umaleko we-oxide wendalo kumphezulu we-wafer, apho kusetyenziswa isisombululo se-hydrofluoric acid (HF). Umlinganiselo oqhelekileyo wesisombululo se-HF yi-HF
₂O = 1:50, kwaye ingasetyenziswa kubushushu begumbi.
3. Ukucoca kokugqibela
Emva kokucoca ngamakhemikhali, ii-wafers zihlala zithatha inyathelo lokugqibela lokucoca ukuqinisekisa ukuba akukho ntsalela yeekhemikhali eseleyo kumphezulu. Ukucoca kokugqibela kusebenzisa amanzi acocekileyo ukuze kuhlanjululwe kakuhle. Ukongeza, ukucoca ngamanzi e-ozone (O₃/H₂O) kusetyenziswa ukususa naluphi na ungcoliseko oluseleyo kumphezulu we-wafer.
4. Ukomisa
Iiwafers ezicociweyo kufuneka zomiswe ngokukhawuleza ukuthintela ukuba zingabi nazimpawu zamanzi okanye ukuphinda zifakwe izinto ezingcolisayo. Iindlela eziqhelekileyo zokomisa ziquka ukomisa nge-spin kunye nokucoca nge-nitrogen. Eyokuqala isusa umswakama kumphezulu we-wafer ngokujikelezisa ngesantya esiphezulu, ngelixa eyesibini iqinisekisa ukoma ngokupheleleyo ngokuvuthela igesi ye-nitrogen eyomileyo kumphezulu we-wafer.
Isingcolisi
Igama leNkqubo yokucoca
Inkcazelo yoMxube weeKhemikhali
Iikhemikhali
| Amasuntswana | IPiranha (SPM) | I-asidi ye-sulfuric/i-hydrogen peroxide/amanzi e-DI | H2SO4/H2O2/H2O 3-4:1; 90°C |
| I-SC-1 (i-APM) | I-Ammonium hydroxide/i-hydrogen peroxide/amanzi e-DI | NH4OH/H2O2/H2O 1:4:20; 80°C | |
| Iintsimbi (hayi ubhedu) | I-SC-2 (HPM) | I-Hydrochloric acid/i-hydrogen peroxide/amanzi e-DI | HCl/H2O2/H2O1:1:6; 85°C |
| IPiranha (SPM) | I-asidi ye-sulfuric/i-hydrogen peroxide/amanzi e-DI | H2SO4/H2O2/H2O3-4:1; 90°C | |
| I-DHF | Nciphisa amanzi e-hydrofluoric acid/DI (ayiyi kuyisusa i-copper) | HF/H2O1:50 | |
| Izinto eziphilayo | IPiranha (SPM) | I-asidi ye-sulfuric/i-hydrogen peroxide/amanzi e-DI | H2SO4/H2O2/H2O 3-4:1; 90°C |
| I-SC-1 (i-APM) | I-Ammonium hydroxide/i-hydrogen peroxide/amanzi e-DI | NH4OH/H2O2/H2O 1:4:20; 80°C | |
| I-DIO3 | I-ozone emanzini angena-ionized | Imixube elungiselelweyo ye-O3/H2O | |
| I-Oxide yeMveli | I-DHF | Nciphisa amanzi e-hydrofluoric acid/DI | HF/H2O 1:100 |
| I-BHF | I-asidi ye-hydrofluoric ehlanganisiweyo | I-NH4F/HF/H2O |
3. Iindlela zokucoca iiWafer eziqhelekileyo
1. Indlela yokucoca i-RCA
Indlela yokucoca i-RCA yenye yezona ndlela ziqhelekileyo zokucoca i-wafer kwishishini le-semiconductor, eyaphuhliswa yi-RCA Corporation kwiminyaka engaphezu kwama-40 eyadlulayo. Le ndlela isetyenziswa kakhulu ukususa ukungcola kwezinto eziphilayo kunye nokungcola kwee-ion zesinyithi kwaye ingagqitywa ngamanyathelo amabini: i-SC-1 (i-Standard Clean 1) kunye ne-SC-2 (i-Standard Clean 2).
Ukucoca kwe-SC-1: Eli nyathelo lisetyenziselwa kakhulu ukususa izinto ezingcolisayo kunye namasuntswana ezinto eziphilayo. Isisombululo ngumxube we-ammonia, i-hydrogen peroxide, kunye namanzi, okwenza umaleko omncinci we-silicon oxide kumphezulu we-wafer.
Ukucoca kwe-SC-2: Eli nyathelo lisetyenziswa kakhulu ukususa ungcoliseko lwee-ion zesinyithi, kusetyenziswa umxube we-hydrochloric acid, i-hydrogen peroxide, kunye namanzi. Lishiya umaleko omncinci wokudlulisa amanzi kumphezulu we-wafer ukuthintela ukungcola.
2. Indlela yokucoca iPiranha (ukucoca iPiranha etch)
Indlela yokucoca iPiranha yindlela esebenza kakhulu ekususeni izinto eziphilayo, kusetyenziswa umxube we-sulfuric acid kunye ne-hydrogen peroxide, ngokuqhelekileyo kumlinganiselo we-3:1 okanye 4:1. Ngenxa yeempawu ezinamandla kakhulu ze-oxidative zesi sicombululo, sinokususa inani elikhulu lezinto eziphilayo kunye nezinto ezingcolisayo eziqinileyo. Le ndlela ifuna ulawulo olungqongqo lweemeko, ngakumbi ngokubhekiselele kubushushu kunye noxinzelelo, ukuze kuthintelwe ukonakalisa i-wafer.
Ukucoca nge-ultrasonic kusebenzisa isiphumo se-cavitation esiveliswa ngamaza esandi aphindaphindayo kulwelo ukususa ukungcola kumphezulu we-wafer. Xa kuthelekiswa nokucoca nge-ultrasound yendabuko, ukucoca nge-megasonic kusebenza kwisantya esiphezulu, okuvumela ukususwa ngokufanelekileyo kwamasuntswana amancinci ngaphandle kokubangela umonakalo kumphezulu we-wafer.
4. Ukucocwa kwe-Ozone
Itekhnoloji yokucoca i-ozone isebenzisa iipropati ezinamandla zokuxovula i-ozone ukubola nokususa izinto ezingcolisayo eziphilayo kumphezulu we-wafer, ekugqibeleni ziguqulwe zibe yi-carbon dioxide namanzi angenabungozi. Le ndlela ayifuni ukusetyenziswa kweekhemikhali ezibizayo kwaye ibangela ungcoliseko oluncinci kokusingqongileyo, nto leyo eyenza ukuba ibe yitekhnoloji entsha kwicandelo lokucoca i-wafer.
4. Izixhobo zokucoca iiWafer
Ukuqinisekisa ukusebenza kakuhle kunye nokhuseleko lweenkqubo zokucoca ii-wafer, kusetyenziswa izixhobo ezahlukeneyo zokucoca eziphambili kwimveliso ye-semiconductor. Iintlobo eziphambili ziquka:
1. Izixhobo zokucoca ngamanzi
Izixhobo zokucoca ngamanzi ziquka iitanki ezahlukeneyo zokuntywila, iitanki zokucoca ze-ultrasonic, kunye nee-spin dryers. Ezi zixhobo zidibanisa amandla oomatshini kunye nee-reagents zeekhemikhali ukususa ungcoliseko kumphezulu we-wafer. Iitanki zokuntywila zihlala zixhotyiswe ngeenkqubo zokulawula ubushushu ukuqinisekisa uzinzo kunye nokusebenza kakuhle kwezisombululo zeekhemikhali.
2. Izixhobo zokucoca ngeoyile
Izixhobo zokucoca ezomileyo ziquka ikakhulu izicoci zeplasma, ezisebenzisa amasuntswana anamandla aphezulu kwiplasma ukuze zisebenze kunye nokususa iintsalela kumphezulu we-wafer. Ukucocwa kweplasma kulungele ngokukodwa iinkqubo ezifuna ukugcina umgangatho opheleleyo ngaphandle kokungenisa iintsalela zeekhemikhali.
3. Iinkqubo zokucoca ezizenzekelayo
Ngenxa yokwanda okuqhubekayo kwemveliso ye-semiconductor, iinkqubo zokucoca ngokuzenzekelayo ziye zaba lolona khetho lukhethwayo lokucoca ii-wafer ezinkulu. Ezi nkqubo zihlala ziquka iindlela zokudlulisa ezizenzekelayo, iinkqubo zokucoca ii-tank ezininzi, kunye neenkqubo zokulawula ngokuchanekileyo ukuqinisekisa iziphumo zokucoca ezihambelanayo kwi-wafer nganye.
5. Iindlela Eziza Kulandela
Njengoko izixhobo ze-semiconductor ziqhubeka nokuncipha, iteknoloji yokucoca ii-wafer iyatshintsha isiya kwizisombululo ezisebenzayo nezinobuhlobo nokusingqongileyo. Iteknoloji yokucoca yexesha elizayo iya kugxila koku kulandelayo:
Ukususwa kweeNgcambu zeSub-nanometer: Iiteknoloji zokucoca ezikhoyo zinokusingatha ii-particles zesikali se-nanometer, kodwa ngokunciphisa ubungakanani besixhobo, ukususa ii-particles ze-sub-nanometer kuya kuba ngumceli mngeni omtsha.
Ukucoca okuluhlaza nokunobuhlobo nokusingqongileyo: Ukunciphisa ukusetyenziswa kweekhemikhali eziyingozi kokusingqongileyo kunye nokuphuhlisa iindlela zokucoca ezinobuhlobo nokusingqongileyo, ezinje ngokucoca nge-ozone kunye nokucoca nge-megasonic, kuya kuba baluleke ngakumbi.
Amanqanaba aphezulu okwenziwa kwezinto ngokuzenzekelayo kunye nobukrelekrele: Iinkqubo zobukrelekrele ziya kuvumela ukujonga nokulungisa iiparameter ezahlukeneyo ngexesha lokucoca, nto leyo ephucula ngakumbi ukusebenza kakuhle kokucoca kunye nokusebenza kakuhle kwemveliso.
Itekhnoloji yokucoca iiwafer, njengenyathelo elibalulekileyo ekwenzeni ii-semiconductor, idlala indima ebalulekileyo ekuqinisekiseni ukuba iindawo ze-wafer zicocekile kwiinkqubo ezilandelayo. Ukudibanisa iindlela ezahlukeneyo zokucoca kususa ngokufanelekileyo izinto ezingcolisayo, kubonelela ngomphezulu ococekileyo we-substrate kumanyathelo alandelayo. Njengoko itekhnoloji iqhubela phambili, iinkqubo zokucoca ziya kuqhubeka zilungiswa ukuze zihlangabezane neemfuno zokuchaneka okuphezulu kunye namazinga aphantsi eziphene kwimveliso yee-semiconductor.
Ixesha leposi: Okthobha-08-2024