Ii-semiconductors zisebenza njengesiseko sexesha lolwazi, kwaye ukuphindaphinda ngakunye kwezinto kuchaza kwakhona imida yetekhnoloji yoluntu. Ukusuka kwii-semiconductors ezisekwe kwi-silicon yesizukulwana sokuqala ukuya kwizixhobo ze-bandgap zesizukulwana sesine sanamhlanje, yonke inyathelo lokuzivelela liye laqhuba inkqubela phambili yotshintsho kunxibelelwano, amandla, kunye nekhompyutha. Ngokuhlalutya iimpawu kunye nengqiqo yotshintsho lwesizukulwana sezixhobo ze-semiconductor ezikhoyo, sinokuqikelela iindlela ezinokubakho zee-semiconductors zesizukulwana sesihlanu ngelixa sihlola iindlela zeqhinga zaseTshayina kule ndawo yokhuphiswano.
I. Iimpawu kunye neLogic yokuguquka kweZizukulwana ezine zeSemiconductor
IiSemiconductors zeSizukulwana sokuQala: Ixesha leSilicon-Germanium Foundation
Iimpawu: Ii-semiconductors ze-elemental ezifana ne-silicon (Si) kunye ne-germanium (Ge) zibonelela ngeenkqubo zokuvelisa ezisebenza kakuhle kwaye zivuthiwe, kodwa zinengxaki yokungakwazi ukuthwala imithwalo emincinci (Si: 1.12 eV; Ge: 0.67 eV), ukunyamezelana kwe-voltage okulinganiselweyo kunye nokusebenza kwe-frequency ephezulu.
Izicelo: Iisekethe ezidibeneyo, iiseli zelanga, izixhobo ezine-voltage ephantsi/ephantsi.
Umqhubi woTshintsho: Imfuno ekhulayo yokusebenza rhoqo/ubushushu obuphezulu kwi-optoelectronics idlule amandla e-silicon.
IiSemiconductors zeSizukulwana sesiBini: I-III-V Compound Revolution
Iimpawu: Iikhompawundi ze-III-V ezifana ne-gallium arsenide (GaAs) kunye ne-indium phosphide (InP) zine-bandgaps ebanzi (GaAs: 1.42 eV) kunye nokuhamba okuphezulu kwe-electron kwi-RF kunye nezicelo ze-photonic.
Usetyenziso: Izixhobo ze-5G RF, ii-laser diodes, unxibelelwano lwesathelayithi.
Imingeni: Ukunqongophala kwezinto (ubuninzi be-indium: 0.001%), izinto ezinobuthi (i-arsenic), kunye neendleko eziphezulu zemveliso.
Umqhubi woTshintsho: Izixhobo zamandla/amandla zifuna izixhobo ezine-voltage ephezulu yokuqhekeka.
IiSemiconductors zeSizukulwana Sesithathu: I-Wide Bandgap Energy Revolution
Iimpawu: I-Silicon carbide (SiC) kunye ne-gallium nitride (GaN) zinika ii-bandgaps >3eV (SiC:3.2eV; GaN:3.4eV), kunye ne-thermal conductivity ephezulu kunye neempawu ze-high-frequency.
Usetyenziso: Ii-powertrains ze-EV, ii-inverters ze-PV, iziseko zophuhliso ze-5G.
Iingenelo: Ukonga amandla nge-50% nangaphezulu kunye nokunciphisa ubungakanani nge-70% xa kuthelekiswa ne-silicon.
Umqhubi woTshintsho: I-AI/i-quantum computing ifuna izixhobo ezinemilinganiselo yokusebenza egqithisileyo.
IiSemiconductors zesizukulwana sesine: I-Ultra-Wide Bandgap Frontier
Iimpawu: I-Gallium oxide (Ga₂O₃) kunye nedayimani (C) zifikelela kwi-bandgaps ukuya kuthi ga kwi-4.8eV, zidibanisa ukumelana okuphantsi kakhulu kunye nokunyamezelana kwevolthi yeklasi ye-kV.
Izicelo: Ii-IC ze-Ultra-high-voltage, ii-deep-UV detectors, unxibelelwano lwe-quantum.
Ukuphumelela: Izixhobo zeGa₂O₃ zimelana ne>8kV, nto leyo ephinda kathathu ukusebenza kakuhle kweSiC.
Ingcamango Yokuguquka Kwezinto: Kufuneka ukutsiba okubonakalayo kwesikali se-quantum ukuze koyiswe imida yomzimba.
I. Iindlela zeSemiconductor zesizukulwana sesihlanu: Izinto zeQuantum kunye noyilo lwe-2D
Iivektha zophuhliso ezinokubakho ziquka:
1. Ii-Insulators zeTopological: Ukuhanjiswa komphezulu nge-insulation enkulu kwenza ukuba izixhobo ze-elektroniki zingabi nalahleko.
2. Izixhobo ze-2D: I-Graphene/MoS₂ inika impendulo ye-THz-frequency kunye nokuhambelana kwe-elektroniki okuguquguqukayo.
3. Amachaphaza eQuantum kunye neeKristali zePhotonic: Ubunjineli beBandgap buvumela ukuhlanganiswa kwe-optoelectronic-thermal.
4. Ii-Bio-Semiconductors: Izinto ezizihlanganisayo ezisekelwe kwi-DNA/protein ezidibanisa i-bridge biology kunye ne-elektroniki.
5. Izinto Eziphambili Eziqhubayo: I-AI, ujongano lwekhompyutha nobuchopho, kunye neemfuno zokuqhuba umbane ngamandla obushushu begumbi.
II. Amathuba e-Semiconductor aseTshayina: Ukusuka kuMlandeli ukuya kwiNkokeli
1. Uphuhliso lweTekhnoloji
• Isizukulwana sesi-3: Ukuveliswa ngobuninzi kwe-substrates ze-SiC eziyi-8-intshi; ii-MOSFET ze-SiC ezikumgangatho weemoto kwizithuthi ze-BYD
• Isizukulwana sesi-4: Ukuphumelela kwe-epitaxy ye-Ga₂O₃ ye-intshi ezi-8 yi-XUPT kunye ne-CETC46
2. Inkxaso yoMgaqo-nkqubo
• Isicwangciso seminyaka emihlanu se-14 sibeka phambili ii-semiconductors zesizukulwana sesithathu
• Iingxowa-mali zemizi-mveliso zephondo ezilikhulu leebhiliyoni zeeyuan zasekwa
• Iziganeko ezibalulekileyo zezixhobo zeGaN eziyi-6-8 intshi kunye neetransistors zeGa₂O₃ zidweliswe phakathi kwezona ziphambili ezili-10 zophuhliso lobuchwepheshe ngo-2024.
III. Imingeni kunye neZisombululo zoBuchule
1. Iingxaki zobugcisa
• Ukukhula kwekristale: Isivuno esiphantsi kwiibhola ezinkulu (umz., ukuqhekeka kweGa₂O₃)
• Imigangatho yokuthembeka: Ukungabikho kwemigaqo-nkqubo emiselweyo yovavanyo lokwaluphala olunamandla aphezulu/oluphindaphindwayo
2. Izikhewu zeCandelo loNikezelo
• Izixhobo: <20% yomxholo wasekhaya wabalimi bekristale yeSiC
• Ukwamkelwa: Ukukhethwa okusezantsi kwezinto ezingenisiweyo
3. Iindlela zoBuchule
• Intsebenziswano phakathi kweShishini neMfundo: Yenziwe ngokwe-“Third-Gen Semiconductor Alliance”
• Ingqwalasela yeNiche: Beka phambili unxibelelwano lwe-quantum/iimarike zamandla amatsha
• Uphuhliso lweeTalente: Seka iinkqubo zemfundo ze-"Chip Science & Engineering"
Ukusuka kwisilicon ukuya kwiGa₂O₃, i-semiconductor innovation ibhala ngoloyiso lwabantu kwimida yomzimba. Ithuba laseTshayina lisekuqondeni izinto zesizukulwana sesine ngelixa liqala izinto ezintsha zesizukulwana sesihlanu. Njengoko i-Academician uYang Deren ephawulile: “Ubuchule bokwenyani bufuna ukudalwa kweendlela ezingahanjwanga.” Ukusebenzisana komgaqo-nkqubo, imali, kunye netekhnoloji kuya kumisela ikamva le-semiconductor yaseTshayina.
I-XKH ivele njengomboneleli wezisombululo ezidityaniswe ngokuthe nkqo ogxile kwizixhobo ze-semiconductor eziphambili kwizizukulwana ezininzi zobuchwepheshe. Ngobuchule obuphambili obuquka ukukhula kwekristale, ukucubungula ngokuchanekileyo, kunye neetekhnoloji zokugquma ezisebenzayo, i-XKH inika ii-substrates ezisebenzayo eziphezulu kunye nee-epitaxial wafers zezicelo eziphambili kwi-electronics yamandla, unxibelelwano lwe-RF, kunye neenkqubo ze-optoelectronic. Inkqubo yethu yokuvelisa iquka iinkqubo zobunini zokuvelisa ii-wafers ze-silicon carbide ezingama-4-8 intshi kunye ne-gallium nitride kunye nolawulo oluphambili lweziphene kushishino, ngelixa igcina iinkqubo ezisebenzayo ze-R&D kwizixhobo ze-bandgap ezikhulayo eziquka i-gallium oxide kunye ne-diamond semiconductors. Ngokusebenzisana ngobuchule namaziko ophando aphambili kunye nabavelisi bezixhobo, i-XKH iphuhlise iqonga lemveliso eliguquguqukayo elinokuxhasa ukuveliswa kweemveliso ezisemgangathweni ophezulu kunye nophuhliso olukhethekileyo lwezisombululo zezinto ezenziwe ngokwezifiso. Ubuchule be-XKH bobuchwephesha bugxile ekusombululeni imingeni ebalulekileyo kushishino efana nokuphucula ukufana kwe-wafer kwizixhobo zamandla, ukuphucula ulawulo lobushushu kwizicelo ze-RF, kunye nokuphuhlisa izakhiwo ezintsha zezixhobo ze-photonic zesizukulwana esilandelayo. Ngokudibanisa isayensi yezinto ezisemgangathweni kunye nobuchule bobunjineli obuchanekileyo, i-XKH ivumela abathengi ukuba boyise imida yokusebenza kwizicelo ezisebenza rhoqo, ezinamandla aphezulu, kunye nokusingqongileyo okugqithisileyo ngelixa ixhasa utshintsho lweshishini le-semiconductor lasekhaya ukuya ekuzimeleni okukhulu kwekhonkco lokubonelela.
Ezi zilandelayo yi-XKH's 12inchs sapphire wafer kunye ne-12inch SiC substrate:
Ixesha leposi: Juni-06-2025