I-semiconductors isebenza njengelitye lembombo lexesha lolwazi, kunye nokuphindaphinda kwezinto eziphathekayo kuchaza kwakhona imida yeteknoloji yabantu. Ukusuka kwisizukulwana sokuqala se-silicon-based semiconductors ukuya kwisizukulwana sesine sezixhobo ze-bandgap ebanzi, yonke into etsibayo yendaleko iqhubele phambili inguqu kunxibelelwano, amandla kunye nekhompyuter. Ngokuhlalutya iimpawu kunye nengqiqo yenguqu yokuvelisa yemathiriyeli ekhoyo ye-semiconductor, sinokuqikelela imikhomba-ndlela enokubakho ye-semiconductors yesizukulwana sesihlanu ngelixa sihlola iindlela zobuchule zase-China kweli qonga lokhuphiswano.
I. Iimpawu kunye neNgcaciso ye-Evolution yeZizukulwane ezine zeSemiconductor
IiSemiconductors zesiZukulwana sokuqala: Ixesha leSiseko seSilicon-Germanium
Iimpawu: Ii-semiconductors ze-Elemental ezifana ne-silicon (Si) kunye ne-germanium (Ge) zibonelela ngeendleko-zokusebenza kunye neenkqubo zokuvelisa ezivuthiweyo, kodwa zihlupheke kwi-bandgap emxinwa (Si: 1.12 eV; Ge: 0.67 eV), ukunciphisa ukunyamezela kwamandla ombane kunye nokusebenza kwe-frequency ephezulu.
Izicelo: Iisekethe ezidibeneyo, iiseli zelanga, izixhobo eziphantsi-i-voltage / eziphantsi-frequency.
Umqhubi wenguqu: Imfuno ekhulayo yokusebenza kwe-high-frequency / high-temperature kwi-optoelectronics igqithise amandla e-silicon.
IiSemiconductors zesizukulwana sesibini: I-III-V Compound Revolution
Iimpawu: iikhompawundi ze-III-V ezifana ne-gallium arsenide (GaAs) kunye ne-indium phosphide (InP) ibonisa i-bandgaps ebanzi (i-GaAs: i-1.42 eV) kunye nokuhamba kwe-electron ephezulu kwi-RF kunye nezicelo ze-photonic.
Izicelo: Izixhobo ze-5G RF, i-laser diode, unxibelelwano lwesathelayithi.
Imingeni: Ukunqongophala kwezinto (ubuninzi be-idium: 0.001%), izinto ezinetyhefu (i-arsenic), kunye neendleko eziphezulu zokuvelisa.
Umqhubi weNguqu: Usetyenziso lwamandla/amandla lufuna imathiriyeli enokuwohloka okuphezulu kombane.
IiSemiconductors zesiZukulwana sesithathu: I-Wide Bandgap Energy Revolution
Iimpawu: I-Silicon carbide (SiC) kunye ne-gallium nitride (GaN) ihambisa i-bandgaps> 3eV (SiC: 3.2eV; GaN: 3.4eV), ene-conductivity ephezulu ye-thermal kunye neempawu eziphezulu ze-frequency.
Izicelo: I-EV powertrains, i-PV inverters, iziseko ze-5G.
Izinto ezilungileyo: i-50% + yokonga amandla kunye ne-70% yokunciphisa ubungakanani ngokuchasene ne-silicon.
Umqhubi woTshintsho: I-AI/quantum computing ifuna imathiriyeli enemilinganiselo yokusebenza egqithisileyo.
IiSemiconductors zesizukulwana sesine: I-Ultra-Wide Bandgap Frontier
Iimpawu: I-Gallium oxide (Ga₂O₃) kunye nedayimane (C) iphumelele i-bandgaps ukuya kwi-4.8eV, ukudibanisa i-ultra-low on-resistance kunye ne-kV-class tolerance voltage.
Izicelo: I-Ultra-high-voltage ICs, i-deep-UV detectors, unxibelelwano lwe-quantum.
Ukuphumelela: Izixhobo ze-Ga₂O₃ ziyamelana ne->8kV, ukusebenza kakuhle kwe-SiC kathathu.
Ingqiqo yokuZiphendukela kwemvelo: Umtsi wokwenziwa komgangatho we-quantum uyafuneka ukoyisa imida yomzimba.
I. IiMpawu zeSemiconductor zeSizukulwana sesihlanu: Izinto zeQuantum kunye ne-2D Architecture
Izinto ezinokuthi ziphuhliswe zibandakanya:
1. I-Topological Insulators: I-Surface conduction ene-bulk insulation yenza ukuba i-electronics ilahlekelwe yi-zero.
2. Izinto ze-2D: I-graphene / i-MoS₂ inikezela ngempendulo ye-THz-frequency kunye ne-flexible electronics comppatibility.
3. I-Quantum Dots & Photonic Crystals: Ubunjineli be-bandgap buvumela ukuhlanganiswa kwe-optoelectronic-thermal.
4. I-Bio-Semiconductors: I-DNA / i-protein-based self-assembling materials bridge biology and electronics.
5. Abaqhubi abaPhambili: I-AI, i-brain-computer interfaces, kunye neemfuno ze-superconductivity yegumbi lokushisa.
II. Amathuba eSemiconductor aseTshayina: Ukusuka kuMlandeli ukuya kwiNkokeli
1. UkuPhumelela kweTekhnoloji
• I-3rd-Gen: Ukuveliswa kobuninzi be-8-intshi ye-SiC substrates; iimoto-grade SiC MOSFETs kwizithuthi BYD
• I-4th-Gen: 8-intshi ye-Ga₂O₃ epitaxy impumelelo nge-XUPT kunye ne-CETC46
2. Inkxaso yoMgaqo-nkqubo
• IsiCwangciso se-14 seminyaka emihlanu sibeka phambili i-3rd-gen semiconductors
• Kusekiwe imali yePhondo yeebhiliyoni zeeyuan kwimizi-mveliso
• IMilestones 6-8 intshi yezixhobo ze-GaN kunye ne-Ga₂O₃ transistors ezidweliswe phakathi kwe-top-10 yenkqubela phambili ye-tech ngo-2024
III. Imingeni kunye nezisombululo zeQhinga
1. IiBottlenecks zobuGcisa
• Ukukhula kweCrystal: Isivuno esisezantsi kwiibhowuli ezinobubanzi obukhulu (umzekelo, ukuqhekeka kwe-Ga₂O₃)
• Imigangatho yokuthembeka: Ukunqongophala kwemigaqo emiselweyo yovavanyo lokwaluphala lwamandla aphezulu/amaxesha amaninzi.
2. IZikhewu zoBonelelo
• Izixhobo: <20% umxholo wasekhaya kubalimi be-SiC crystal
• Ulwamkelo: Ukukhethwa komsinga osezantsi kumacandelo asuka kumazwe angaphandle
3. IiNdlela eziCwangcisiweyo
• INtsebenziswano yoShishino-kwiziFundo: Imiliselwe emva kwe-“Third-Gen Semiconductor Alliance”
• Ugqaliselo lweNiche: Beka phambili unxibelelwano lwesixa/iimarike zamandla amatsha
• Uphuhliso lweetalente: Seka iinkqubo zemfundo “zeNzululwazi yeChip nobunjineli”
Ukusuka kwi-silicon ukuya kwi-Ga₂O₃, i-semiconductor evolution ichaza uloyiso loluntu phezu kwemida yomzimba. Ithuba lase-China lisekukwazini izinto ze-sine ngelixa livula indlela entsha yesihlanu. Kunjengokuba isazi semfundo ephakamileyo uYang Deren sathi: “Ukuveliswa kwezinto ezintsha zokwenyani kufuna ukuba kwakhiwe iindlela ezingahambanga.” Intsebenziswano yomgaqo-nkqubo, inkunzi, kunye netekhnoloji iya kumisela isiphelo se-semiconductor yaseTshayina.
I-XKH iye yavela njengomboneleli wezisombululo ezidityanisiweyo ngokuthe nkqo okhethekileyo kwizinto eziphambili ze-semiconductor kwizizukulwana ezininzi zetekhnoloji. Ngobuchule obuphambili obususela ekukhuleni kwekristale, ukusetyenzwa ngokuchanekileyo, kunye nobuchwephesha bokwambathisa obusebenzayo, i-XKH ihambisa ii-substrates ezisebenza ngokuphezulu kunye ne-epitaxial wafers ukwenzela usetyenziso oluphambili kumbane wamandla, unxibelelwano lwe-RF, kunye neenkqubo ze-optoelectronic. Inkqubo yethu yokuvelisa indalo ibandakanya iinkqubo zobunini zokuvelisa i-4-8 intshi ye-silicon carbide kunye ne-gallium nitride wafers ezinolawulo lweziphene ezikhokelela kwishishini, ngelixa sigcina iinkqubo ezisebenzayo ze-R&D kwizinto ezivelayo ze-bandap ezibanzi ezibandakanya i-gallium oxide kunye ne-diamond semiconductors. Ngentsebenziswano yobuchule kunye namaziko ophando aphambili kunye nabavelisi bezixhobo, i-XKH iye yaphuhlisa iqonga lokuvelisa eliguquguqukayo elikwaziyo ukuxhasa ukuveliswa kweemveliso ezikumgangatho ophezulu kunye nophuhliso olukhethekileyo lwezisombululo zemathiriyeli. Ubuchwephesha bobugcisa be-XKH bugxile ekujonganeni nemingeni ebalulekileyo yoshishino efana nokuphucula ukufana kwewafer kwizixhobo zombane, ukomeleza ulawulo lwe-thermal kwi-RF applications, kunye nokuphuhlisa i-heterostructures yenoveli yezixhobo ze-photonic zesizukulwana esilandelayo. Ngokudibanisa isayensi yezinto eziphambili kunye nobunjineli obuchanekileyo, i-XKH yenza ukuba abathengi boyise imida yokusebenza kwi-high-frequency, high-power, kunye nezicelo zemo engqongileyo ezigqithisileyo ngelixa ixhasa inguqu yoshishino lwesemiconductor yasekhaya ukuya kwinkululeko enkulu yokubonelela.
Oku kulandelayo yi-XKH's 12inchsapphire wafer & 12inch SiC substrate:
Ixesha lokuposa: Jun-06-2025