Iiglasi ze-AR ze-Optical-Grade Silicon Carbide Waveguide: Ukulungiswa kwe-High-Purity Semi-Insulating Substrates

Ngokuchasene ne-backdrop ye-AI revolution, iiglasi ze-AR ngokuthe ngcembe zingena kwingqondo yoluntu. Njengeparadigm edibanisa ngaphandle komthungo kwihlabathi elibonakalayo kunye nehlabathi lokwenyani, iiglasi ze-AR zahlukile kwizixhobo zeVR ngokuvumela abasebenzisi ukuba babone yomibini imifanekiso eqikelelweyo yedijithali kunye nokukhanya okusingqongileyo okungqongileyo ngaxeshanye. Ukufezekisa le misebenzi emibini-iprojekthi ye-microdisplay imifanekiso emehlweni ngelixa igcina ukukhanya kwangaphandle-i-optical-grade silicon carbide (SiC)-based AR glasses zisebenzisa i-waveguide (lightguide) architecture. Olu yilo luphakamisa ukubonakaliswa kwangaphakathi okupheleleyo ukuhambisa imifanekiso, efana ne-optical fiber transmission, njengoko kubonisiwe kumzobo weskim.

Ngokuqhelekileyo, enye i-6-intshi ye-high-purity semi-insulating substrate inokuvelisa iipere ezi-2 zeeglasi, ngelixa i-substrate ye-8-intshi ithatha i-3-4 izibini. Ukwamkelwa kwezixhobo ze-SiC kunika iingenelo ezintathu ezibalulekileyo:

1. Isalathiso se-refractive esikhethekileyo (2.7): Yenza ukuba> 80 ° indawo egcweleyo yombala wokujonga (FOV) enomaleko welensi enye, isusa izinto zakudala zomnyama eziqhelekileyo kuyilo lweAR oluqhelekileyo.
2. Integrated tri-color (RGB) waveguide: Ithatha indawo ye-multi-layer waveguide stacks, ukunciphisa ubungakanani besixhobo kunye nobunzima.
3. I-Thermal conductivity ephezulu (490 W/m·K): Inciphisa ukuqokelelwa kobushushu okubangelwa kukuthotywa kwe-optical degradation.

Ezi mfanelo ziqhube imfuno emandla yemarike yeeglasi ze-AR ezisekwe kwi-SiC. I-Optical-grade SiC esetyenziswayo ngokuqhelekileyo iqukethe iikristale ze-high-purity semi-insulating (HPSI) , iimfuno zazo ezingqongqo zokulungiselela zinegalelo kwiindleko eziphezulu zangoku. Ngenxa yoko, uphuhliso lwe-HPSI SiC substrates lubalulekile.

1. Ukuhlanganiswa kweSemi-Insulating SiC Powder
Imveliso yomgangatho woshishino ikakhulu isebenzisa i-high-temperature self-propagating synthesis (SHS), inkqubo efuna ulawulo olucokisekileyo:

• Izinto eziluhlaza: 99.999% i-carbon ecocekileyo / i-silicon powders kunye nobukhulu be-particle ye-10-100 μm.
• Ukucoceka kweCrucible: Amalungu egraphiti ahlanjululwa kubushushu obuphezulu ukunciphisa ukungcola kwesinyithi.
• Ulawulo lwe-Atmosphere: I-6N-i-argon yococeko (kunye nezicoci ze-in-line) icinezela ukufakwa kwe-nitrogen; ukulandelela i-HCl/H₂ iigesi zinokuziswa ukuze ziguqule iikhompawundi ze-boron kunye nokunciphisa i-nitrogen, nangona ugxininiso lwe-H₂ ludinga ukulungelelaniswa kokuthintela ukubola kwegraphite.
• Imigangatho yezixhobo: Iziko le-Synthesis kufuneka liphumeze i-<10⁻⁴ i-pa base vacuum, kunye nemigaqo engqongqo yokujonga ukuvuza.

2. Imingeni yokuKhula kweCrystal
Ukukhula kwe-HPSI SiC yabelana neemfuno ezifanayo zokucoceka:

• I-Feedstock: 6N+-purity SiC powder ene-B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O ngaphantsi kwemida, kunye neentsimbi zealkali ezincinci (Na/K).
• Iinkqubo zegesi: I-6N i-argon / i-hydrogen blends iphucula ukuxhathisa.
• Izixhobo: Iipompo zemolekyuli ziqinisekisa i-vacuum ye-ultrahigh (<10⁻⁶ Pa); Unyango lwangaphambili lwe-crucible kunye nokucocwa kwenitrogen kubalulekile.

I-Substrate Processing Innovations
Xa kuthelekiswa nesilicon, imijikelo yokukhula ende ye-SiC kunye noxinzelelo lwendalo (olubangela ukuqhekeka / ukuqhekeka komphetho) lufuna ukuqhubela phambili:

• Ukunqunyulwa kweLaser: Yandisa isivuno ukusuka kuma-wafers angama-30 (350 μm, isarha yocingo) ukuya>ama-50 eewafers kwibhowule eyi-20-mm, enesakhono se-200-μm yokubhitya. Ixesha lokucubungula lihla ukusuka kwi-10-15 iintsuku (i-wire saw) ukuya kwi-<20 min / i-wafer ye-8-intshi ye-crystals.

3. Intsebenziswano kuShishino

Iqela le-Meta's Orion libe nguvulindlela wokwamkelwa komgangatho we-SiC waveguide, ikhuthaza utyalo-mali lwe-R&D. Ubuhlakani obuphambili bubandakanya:

• I-TankeBlue kunye ne-MUDI Micro: Uphuhliso oludibeneyo lwe-AR diffractive waveguide lens.
• I-Jingsheng Mech, i-Longqi Tech, i-XREAL, kunye ne-Kunyou Optoelectronics: Umanyano lobuchule lwe-AI/AR yokudityaniswa kwekhonkco lokubonelela.

Uqikelelo lwemarike luqikelela ama-500,000 eeyunithi ze-AR ezisekwe kwi-SiC ngonyaka ngo-2027, zitya i-250,000 6-intshi (okanye 125,000 8-intshi) substrates. Le trajectory igxininisa indima yeSiC yenguqu kwisizukulwana esilandelayo se-AR optics.

I-XKH ngokukhethekileyo ekunikezeni umgangatho ophezulu we-4H-semi-insulating (4H-SEMI) ii-SiC substrates ezine-customizable diameters ukusuka kwi-2-intshi ukuya kwi-8-intshi, elungiselelwe ukuhlangabezana neemfuno ezithile zesicelo kwi-RF, i-electronics power, kunye ne-AR / VR optics. Amandla ethu abandakanya unikezelo lwevolumu oluthembekileyo, ukuchaneka ngokwezifiso (ubukhulu, ukuqhelaniswa, ukugqiba umphezulu), kunye nokulungiswa okupheleleyo kwangaphakathi kwindlu ukusuka ekukhuleni kwekristale ukuya kwipolishe. Ngaphandle kwe-4H-SEMI, sikwabonelela nge-4H-N-uhlobo, i-4H / 6H-P-uhlobo, kunye nee-substrates ze-3C-SiC, ezixhasa i-semiconductor eyahlukeneyo kunye ne-optoelectronic innovations.