Okwangoku, inkampani yethu ingaqhubeka nokubonelela ngebhetshi encinci ye-8inchN yohlobo lwe-SiC wafers, ukuba uneemfuno zesampulu, nceda uzive ukhululekile ukunxibelelana nam. Sinezinye iisampulu ezilungele ukuthunyelwa ngenqanawa.
Kwinkalo yezixhobo ze-semiconductor, inkampani yenze impumelelo enkulu kuphando kunye nophuhliso lweekristale ezinkulu zeSiC. Ngokusebenzisa iikristale zembewu yayo emva kwemijikelo emininzi yokwandiswa kobubanzi, inkampani ikhule ngempumelelo i-8-intshi ye-N-uhlobo lweekristale zeSiC, ezisombulula iingxaki ezinzima ezifana nentsimi yobushushu obungalinganiyo, ukuqhekeka kwekristale kunye nesigaba segesi ukuhanjiswa kwezinto ekrwada kwinkqubo yokukhula. Iikristale ze-8-intshi ze-SIC, kwaye ikhawulezisa ukukhula kweekristale ezinkulu ze-SIC kunye neteknoloji yokuzimela kunye nokulawulwayo. Ukwandisa kakhulu ukhuphiswano olungundoqo lwenkampani kushishino lwekristale enye yeSiC. Kwangaxeshanye, inkampani ikhuthaza ngokusebenzayo ukuqokelelwa kwetekhnoloji kunye nenkqubo yobungakanani obukhulu be-silicon carbide substrate yokulungiselela umgca wovavanyo, yomeleza utshintshiselwano lobugcisa kunye nentsebenziswano yoshishino kumasimi angasentla nasezantsi, kwaye usebenzisana nabathengi ukuba bahlale bephindaphinda ukusebenza kwemveliso, kunye ngokudibeneyo. ikhuthaza isantya sokusetyenziswa kweshishini lezinto ze-silicon carbide.
| 8inch N-uhlobo lweSiC DSP Specs | |||||
| Inani | Into | Iyunithi | Imveliso | Uphando | Dummy |
| 1. Iiparamitha | |||||
| 1.1 | i-polytype | -- | 4H | 4H | 4H |
| 1.2 | ukuqhelaniswa nomphezulu | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2. Ipharamitha yombane | |||||
| 2.1 | dopant | -- | n-uhlobo lweNitrojeni | n-uhlobo lweNitrojeni | n-uhlobo lweNitrojeni |
| 2.2 | ukumelana | ohm ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| 3. Mechanical parameter | |||||
| 3.1 | ububanzi | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | ubukhulu | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | Ukuqhelaniswa nenotshi | ° | [1- 100]±5 | [1- 100]±5 | [1- 100]±5 |
| 3.4 | Ubunzulu beNotshi | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | LTV | μm | ≤5(10mm*10mm) | ≤5(10mm*10mm) | ≤10(10mm*10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Ukuqubuda | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | I-Wap | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4. Ubume | |||||
| 4.1 | ukuxinana kwemibhobho | uya/cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | umxholo wesinyithi | iiathom/cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | uya/cm2 | ≤500 | ≤1000 | NA |
| 4.4 | I-BPD | uya/cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | TED | uya/cm2 | ≤7000 | ≤10000 | NA |
| 5. Umgangatho oncomekayo | |||||
| 5.1 | ngaphambili | -- | Si | Si | Si |
| 5.2 | umphezulu wokugqiba | -- | Si-ubuso CMP | Si-ubuso CMP | Si-ubuso CMP |
| 5.3 | isuntswana | isitya/isiqwengana | ≤100(ubukhulu≥0.3μm) | NA | NA |
| 5.4 | umkrwelo | isitya/isiqwengana | ≤5, UBude buBonke≤200mm | NA | NA |
| 5.5 | Edge iitshiphusi/iziindenti/iintanda/amabala/ungcoliseko | -- | Akukho nanye | Akukho nanye | NA |
| 5.6 | Iindawo zePolytype | -- | Akukho nanye | Indawo ≤10% | Indawo ≤30% |
| 5.7 | uphawu lwangaphambili | -- | Akukho nanye | Akukho nanye | Akukho nanye |
| 6. Umgangatho wasemva | |||||
| 6.1 | emva kokugqiba | -- | C-ubuso MP | C-ubuso MP | C-ubuso MP |
| 6.2 | umkrwelo | mm | NA | NA | NA |
| 6.3 | Umqolo uneziphene edge iitshiphusi/iindidi | -- | Akukho nanye | Akukho nanye | NA |
| 6.4 | Umqolo uburhabaxa | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Ukumakisha ngasemva | -- | Inotshi | Inotshi | Inotshi |
| 7. Ungqameko | |||||
| 7.1 | edge | -- | Chamfer | Chamfer | Chamfer |
| 8. Iphakheji | |||||
| 8.1 | ukupakishwa | -- | I-Epi-ilungile kunye ne-vacuum ukupakishwa | I-Epi-ilungile kunye ne-vacuum ukupakishwa | I-Epi-ilungile kunye ne-vacuum ukupakishwa |
| 8.2 | ukupakishwa | -- | I-Multi-wafer ukupakishwa kweekhasethi | I-Multi-wafer ukupakishwa kweekhasethi | I-Multi-wafer ukupakishwa kweekhasethi |
Ixesha lokuposa: Apr-18-2023