Isishwankathelo:Siphuhlise i-1550 nm insulator-based lithium tantalate waveguide enelahleko ye-0.28 dB/cm kunye ne-ring resonator quality factor ye-1.1 yezigidi. Ukusetyenziswa kwe-χ(3) nonlinearity kwi-nonlinear photonics kuye kwafundwa. Iingenelo ze-lithium niobate kwi-insulator (LNoI), ebonisa iipropati ezibalaseleyo ze-χ(2) kunye ne-χ(3) nonlinear kunye nokuvalelwa okunamandla kwe-optical ngenxa yesakhiwo sayo se-"insulator-on", kukhokelele kwinkqubela phambili ebalulekileyo kwitekhnoloji ye-waveguide kwiimodulators ze-ultrafast kunye ne-integrated nonlinear photonics [1-3]. Ukongeza kwi-LN, i-lithium tantalate (LT) nayo iphandwe njengezinto ze-photonic ezingezizo ze-linear. Xa kuthelekiswa ne-LN, i-LT inomda ophezulu womonakalo we-optical kunye ne-optical transparency window ebanzi [4, 5], nangona iiparameter zayo ze-optical, ezifana ne-refractive index kunye ne-nonlinear coefficients, zifana nezo ze-LN [6, 7]. Ngoko ke, i-LToI ivelele njengenye into enamandla yokusetyenziswa kwe-photonic enamandla aphezulu e-optical. Ngaphezu koko, i-LToI iba yinto ephambili kwizixhobo zokucoca i-surface acoustic wave (SAW), ezisebenza kubuchwepheshe beselula obukhawulezayo kunye nobobungenazingcingo. Kule meko, ii-LToI wafers zinokuba zizinto eziqhelekileyo kwizicelo ze-photonic. Nangona kunjalo, ukuza kuthi ga ngoku, zimbalwa izixhobo ze-photonic ezisekelwe kwi-LToI eziye zaxelwa, ezifana nee-microdisk resonators [8] kunye nee-electro-optic phase shifters [9]. Kule phepha, sibonisa i-LToI waveguide elahlekileyo kancinci kunye nokusetyenziswa kwayo kwi-ring resonator. Ukongeza, sinikezela ngeempawu ze-χ(3) ezingaqhelekanga ze-LToI waveguide.
Amanqaku aphambili:
• Ibonelela ngee-wafers ze-LToI ezi-4-intshi ukuya kwezi-6-intshi, ii-wafers ze-lithium tantalate ezithambileyo, ezinobukhulu obuphezulu obuqala kwi-100 nm ukuya kwi-1500 nm, kusetyenziswa ubuchwepheshe basekhaya kunye neenkqubo ezivuthiweyo.
• I-SINOI: Ii-wafers ze-silicon nitride ezinciphileyo ezilahlekelwa kakhulu.
• I-SICOI: Ii-substrates ze-silicon carbide ezicociweyo nezingenasici eziphezulu ze-silicon carbide ezidityanisiweyo ze-photonic circuits.
• I-LTOI: Ikhuphisana kakhulu ne-lithium niobate, ii-wafers ze-lithium tantalate ezithambileyo.
• I-LNOI: I-LNOI ye-intshi ezi-8 exhasa ukuveliswa ngobuninzi kweemveliso ezinkulu ze-lithium niobate ezinefilimu encinci.
Ukuveliswa kwee-Insulator Waveguides:Kolu phononongo, sisebenzise ii-wafers ze-LToI ezi-4-intshi. Umaleko ophezulu we-LT yi-substrate ye-LT ejikelezisiweyo ye-Y-cut yezorhwebo yezixhobo ze-SAW, ebotshelelwe ngqo kwi-substrate ye-Si enomaleko we-thermal oxide obukhulu obuyi-3 µm, esebenzisa inkqubo yokusika ekrelekrele. Umfanekiso 1(a) ubonisa umbono ophezulu we-LToI wafer, enobukhulu bomaleko ophezulu we-LT obuyi-200 nm. Sivavanye uburhabaxa bomphezulu womaleko ophezulu we-LT sisebenzisa i-atomic force microscopy (AFM).
Umfanekiso 1.(a) Umbono ophezulu we-LToI wafer, (b) Umfanekiso we-AFM womphezulu womaleko we-LT ophezulu, (c) Umfanekiso we-PFM womphezulu womaleko we-LT ophezulu, (d) I-Schematic cross-section ye-LToI waveguide, (e) Iprofayili yemo ye-TE esisiseko ebaliweyo, kunye (f) Umfanekiso we-SEM womongo we-LToI waveguide core ngaphambi kokufakwa kwe-SiO2 overlayer. Njengoko kubonisiwe kuMfanekiso 1 (b), uburhabaxa bomphezulu bungaphantsi kwe-1 nm, kwaye akukho miqolo yokukrwela ebonweyo. Ukongeza, sihlolisise imeko ye-polarization yomaleko we-LT ophezulu sisebenzisa i-piezoelectric response force microscopy (PFM), njengoko kubonisiwe kuMfanekiso 1 (c). Siqinisekisile ukuba i-polarization efanayo igcinwe nasemva kwenkqubo yokubopha.
Sisebenzisa le substrate ye-LToI, senze i-waveguide ngolu hlobo lulandelayo. Okokuqala, kwafakwa umaleko wemaski yesinyithi ukuze kufakwe i-LT eyomileyo. Emva koko, kwenziwa i-lithography ye-electron beam (EB) ukuchaza ipateni ye-waveguide core phezu komaleko wemaski yesinyithi. Emva koko, sadlulisela ipateni ye-EB resist kumaleko wemaski yesinyithi ngokusebenzisa i-dry etching. Emva koko, i-LToI waveguide core yenziwa kusetyenziswa i-electron cyclotron resonance (ECR) plasma etching. Ekugqibeleni, umaleko wemaski yesinyithi wasuswa ngenkqubo emanzi, kwaye i-SiO2 overlayer yafakwa kusetyenziswa i-plasma-enhanced chemical vapor deposition. Umfanekiso 1 (d) ubonisa i-schematic cross-section ye-LToI waveguide. Ukuphakama kwe-core iyonke, ukuphakama kweplate, kunye nobubanzi be-core yi-200 nm, 100 nm, kunye ne-1000 nm, ngokwahlukeneyo. Qaphela ukuba ububanzi be-core buyanda ukuya kwi-3 µm kumda we-waveguide ukuze kudityaniswe i-optical fiber.
Umfanekiso 1 (e) ubonisa ukusasazwa kwe-optical intensity okubalwayo kwe-fundamental transverse electric (TE) mode kwi-1550 nm. Umfanekiso 1 (f) ubonisa umfanekiso we-scanning electron microscope (SEM) we-LToI waveguide core ngaphambi kokuba i-SiO2 overlayer ibekwe.
Iimpawu ze-Waveguide:Siqale savavanya iimpawu zokulahleka komgca ngokufaka ukukhanya kwe-TE-polarized okuvela kumthombo wokukhupha ozenzekelayo we-1550 nm wavelength amplified kwi-LToI waveguides ezinobude obahlukeneyo. Ukulahleka kokusasaza kufunyenwe kwithambeka lobudlelwane phakathi kobude be-waveguides kunye nokudluliselwa kwi-wavelength nganye. Ukulahleka kokusasaza okulinganisiweyo kwakuyi-0.32, 0.28, kunye ne-0.26 dB/cm kwi-1530, 1550, kunye ne-1570 nm, ngokulandelelana, njengoko kubonisiwe kuMfanekiso 2 (a). I-LToI waveguides ezenziweyo zibonise ukusebenza okulinganayo kokulahleka okuphantsi kunye ne-LNoI waveguides zanamhlanje [10].
Okulandelayo, sivavanye ukungalingani kwe-χ(3) ngokuguqulwa kwe-wavelength eveliswa yinkqubo yokuxuba amaza amane. Sifaka isibane se-continuous wave pump kwi-1550.0 nm kunye nesibane sesignali kwi-1550.6 nm kwi-waveguide ende eyi-12 mm. Njengoko kubonisiwe kuMfanekiso 2 (b), amandla esignali yokukhanya ye-phase-conjugate (idler) ayanda ngokwanda kwamandla okufaka. I-inset kuMfanekiso 2 (b) ibonisa i-spectrum yemveliso eqhelekileyo yokuxuba amaza amane. Ukusuka kubudlelwane phakathi kwamandla okufaka kunye nokusebenza kakuhle kokuguqula, siqikelele ukuba i-nonlinear parameter (γ) imalunga ne-11 W^-1m.
Umfanekiso 3.(a) Umfanekiso we-microscope we-ring resonator eyenziweyo. (b) Ii-transmission spectra ze-ring resonator ezineeparamitha ezahlukeneyo ze-gap. (c) I-transmission spectrum elinganisiweyo neyi-Lorentzian ye-ring resonator ene-gap ye-1000 nm.
Okulandelayo, senze i-resonator yeringi ye-LToI saza savavanya iimpawu zayo. Umfanekiso 3 (a) ubonisa umfanekiso we-optical microscope we-resonator yeringi eyenziweyo. I-resonator yeringi inomfanekiso "we-racetrack", oquka ummandla ogobileyo one-radius ye-100 µm kunye nommandla othe tye we-100 µm ubude. Ububanzi besithuba phakathi kweringi kunye ne-bus waveguide core buyahluka ngokwanda kwe-200 nm, ngokukodwa kwi-800, 1000, kunye ne-1200 nm. Umfanekiso 3 (b) ubonisa i-transmission spectra yesithuba ngasinye, ebonisa ukuba umlinganiselo wokuphela uyatshintsha ngobukhulu besithuba. Ukusuka kwezi spectra, sifumanise ukuba isithuba se-1000 nm sibonelela ngeemeko eziphantse zibe zibalulekileyo zokudibanisa, njengoko sibonisa umlinganiselo ophezulu wokuphela we--26 dB.
Sisebenzisa i-resonator edibeneyo ngokunzulu, siqikelele i-quality factor (Q factor) ngokufaka i-linear transmission spectrum nge-Lorentzian curve, safumana i-Q factor yangaphakathi eyi-1.1 yezigidi, njengoko kubonisiwe kuMfanekiso 3 (c). Ngokolwazi lwethu, olu luphawu lokuqala lwe-resonator yeringi ye-LToI edibeneyo ye-waveguide. Okuphawulekayo kukuba, ixabiso le-Q factor esilifumeneyo liphezulu kakhulu kunele-fiber-coupled LToI microdisk resonators [9].
Isiphelo:Siphuhlise i-LToI waveguide enokulahleka kwe-0.28 dB/cm kwi-1550 nm kunye ne-ring resonator Q factor eyi-1.1 yezigidi. Ukusebenza okufunyenweyo kufana noko kwe-LNoI waveguides zanamhlanje ezilahleka kancinci. Ukongeza, siphande i-χ(3) nonlinearity ye-LToI waveguide eyenziweyo kwizicelo ze-on-chip nonlinear.
Ixesha lokuposa: Novemba-20-2024