Inkcazo:Siye saqulunqa i-1550 nm insulator-based-lithium tantalate waveguide kunye nokulahlekelwa kwe-0.28 dB / cm kunye ne-ring resonator quality factor ye-1.1 yezigidi. Ukusetyenziswa kwe-χ(3) ukungahambisani neefotoni ezingezona mgca kuhlolisisiwe. Izinto eziluncedo ze-lithium niobate kwi-insulator (LNoI), ebonisa okugqwesileyo kwe-χ(2) kunye ne-χ (3) iipropathi ezingahambelaniyo kunye nokuvalelwa okuqinileyo kwamehlo ngenxa yolwakhiwo "lwe-insulator-on", kukhokelele kwinkqubela phambili ebalulekileyo kwitekhnoloji ye-waveguide ye-ultrafast. iimodyuli kunye neefotonic ezidibeneyo ezingabonakaliyo [1-3]. Ukongeza kwi-LN, i-lithium tantalate (LT) iphinde iphandwe njengento engabonakaliyo ye-photonic. Xa kuthelekiswa ne-LN, i-LT inomlinganiselo ophezulu womonakalo we-optical kunye nefestile ebanzi ye-optical transparency [4, 5], nangona i-parameters yayo ye-optical, njenge-index refractive index kunye ne-coefficients engabonakaliyo, ifana ne-LN [6, 7]. Ke, i-LToI igqame njengenye imathiriyeli eyomeleleyo yomgqatswa wamandla aphezulu optical nonlinear photonic applications. Ngaphaya koko, i-LToI isiba sisixhobo esiphambili sezixhobo zokucoca i-surface acoustic wave (SAW), esebenza kwi-high-speed mobile technology kunye ne-wireless technologies. Kulo mongo, ii-wafers ze-LToI zinokuba zizixhobo eziqhelekileyo zosetyenziso lwefotonic. Nangona kunjalo, ukuza kuthi ga ngoku, zimbalwa izixhobo zefotoni ezisekelwe kwi-LToI eziye zaxelwa, ezifana ne-microdisk resonators [8] kunye ne-electro-optic phase shifters [9]. Kweli phepha, sibonisa ilahleko ephantsi ye-LToI waveguide kunye nokusetyenziswa kwayo kwiringi resonator. Ukongeza, sinikezela nge-χ(3) iimpawu ezingezizo ze-LToI waveguide.
Amanqaku aphambili:
• Ukunikezela ngee-intshi ezi-4 ukuya kwi-6-intshi ze-LToI zamawafa, ii-wafers ze-lithium tantalate zefilim ezicekethekileyo, ezinobunzima bomaleko ongaphezulu ukusuka kwi-100 nm ukuya kwi-1500 nm, kusetyenziswa ubuchwepheshe basekhaya kunye neenkqubo ezivuthiweyo.
• I-SINOI: Ilahleko ephantsi kakhulu ye-silicon nitride ebhityileyo yeefilim.
• I-SICOI: I-high-purity semi-insulating silicon carbide thin-film substrates ze-silicon carbide photonic integrated circuits.
• I-LTOI: Umntu okhuphisana naye onamandla kwi-lithium niobate, ifilimu encinci ye-lithium tantalate wafers.
• I-LNOI: I-8-intshi ye-LNOI exhasa ukuveliswa kobuninzi beemveliso ze-lithium niobate ezinkulu-ezinkulu.
Ukwenziwa kwi-Insulator Waveguides:Kolu phononongo, sisebenzise ii-intshi ezi-4 ze-LToI zamawafa. Umphezulu we-LT umaleko yintengiso ye-42 ° ejikelezisiweyo ye-Y-cut LT substrate yezixhobo ze-SAW, edityaniswe ngokuthe ngqo kwi-Si substrate ene-3 µm engqingqwa ye-thermal oxide layer, isebenzisa inkqubo yokusika ehlakaniphile. Umzobo 1(a) ubonisa umbono ophezulu we-wafer ye-LToI, kunye nobukhulu be-LT obuphezulu be-200 nm. Sivavanye uburhabaxa bomphezulu we-LT layer sisebenzisa i-atomic force microscopy (AFM).
Umfanekiso woku-1.(a) Imboniselo ephezulu yesiluphu se-LToI, (b) umfanekiso we-AFM womphezulu womaleko weLT ongaphezulu, (c) umfanekiso wePFM womphezulu womaleko ongaphezulu weLT, (d) Icandelo elinqamlezileyo elicwangcisiweyo lesikhokelo samaza seLToI, (e) Kubalwe iprofayile yemo ye-TE esisiseko, kunye (f) nomfanekiso we-SEM we-LToI ye-waveguide core phambi kokubekwa koqweqwe lweSiO2. Njengoko kubonisiwe kuMfanekiso 1 (b), uburhabaxa bomphezulu bungaphantsi kwe-1 nm, kwaye akukho migca yokukrwempa ibonwe. Ukongeza, sivavanye imeko ye-polarization yomgangatho ophezulu we-LT usebenzisa i-piezoelectric response force microscopy (PFM), njengoko kubonisiwe kuMfanekiso 1 (c). Siqinisekisile ukuba i-polarization efanayo igcinwe nasemva kwenkqubo yokudibanisa.
Sisebenzisa le substrate ye-LToI, senze i-waveguide ngolu hlobo lulandelayo. Okokuqala, umaleko wemaski wesinyithi wadipozithelwa ukufakwa okomileyo okwalandelayo kwe-LT. Emva koko, i-electron beam (EB) lithography yenziwa ukuchaza ipateni engundoqo ye-waveguide phezu komgangatho wemaski yesinyithi. Emva koko, sidlulisele ipateni ye-EB yokuxhathisa kumaleko e-metal mask ngokusebenzisa i-etching eyomileyo. Emva koko, undoqo we-LToI waveguide wenziwa kusetyenziswa i-electron cyclotron resonance (ECR) etching plasma. Ekugqibeleni, i-metal mask layer yasuswa ngenkqubo emanzi, kwaye i-SiO2 i-overlayer yafakwa kusetyenziswa i-plasma-enhanced chemical vapor deposition. Umzobo 1 (d) ubonisa isikhewu somnqamlezo wecandelo le-LToI waveguide. Ubude obungundoqo bubonke, ukuphakama kwepleyiti, kunye nobubanzi obungundoqo ngama-200 nm, 100 nm, kunye ne-1000 nm, ngokulandelanayo. Qaphela ukuba ububanzi be-core buyanda ukuya kwi-3 µm kumda we-waveguide ukudibanisa i-fiber optical.
Umzobo 1 (e) ubonisa ubungakanani bokukhanya obaliweyo bendlela yombane enqamlezileyo esisiseko (TE) kwi-1550 nm. Umzobo 1 (f) ubonisa umfanekiso we-electron microscope (SEM) wokuskena we-LToI waveguide core phambi kokubekwa koqweqwe lweSiO2.
Iimpawu zeWaveguide:Siqale savavanya iimpawu zelahleko zomgca ngokufaka ukukhanya kwe-TE-polarized ukusuka kwi-1550 nm wavelength eyandisiweyo yomthombo wokukhutshwa kwamaza kwi-LToI yamaza obude obahlukeneyo. Ilahleko yokwandisa ifunyenwe kwithambeka lobudlelwane phakathi kobude be-waveguide kunye nokuhanjiswa kwinqanaba ngalinye. Ilahleko yokusabalalisa imilinganiselo yayiyi-0.32, 0.28, kunye ne-0.26 dB / cm kwi-1530, 1550, kunye ne-1570 nm, ngokulandelanayo, njengoko kuboniswe kwi-Figure 2 (a). Amaza amaza enziweyo e-LToI abonise ilahleko ephantsi ethelekisekayo kwimigangatho ye-LNoI ye-waveguides [10].
Okulandelayo, sivavanye i-χ (3) yokungahambelani ngokuguqulwa kwe-wavelength eyenziwe yinkqubo yokuxuba amaza amane. Sifaka i-wave wave pump light light on 1550.0 nm kunye nokukhanya kwesignali kwi-1550.6 nm kwi-12 mm ubude be-waveguide. Njengoko kubonisiwe kuMfanekiso 2 (b), i-phase-conjugate (idler) ukuqina komqondiso wamaza okukhanya kwanda ngokunyuka kwamandla okufaka. I-inset kwi-Figure 2 (b) ibonisa i-spectrum yemveliso eqhelekileyo yokuxuba amaza amane. Ukususela kubudlelwane phakathi kwamandla okufakwayo kunye nokusebenza kakuhle kokuguqulwa, siqikelele i-parameter engabonakaliyo (γ) malunga ne-11 W ^ -1m.
Umfanekiso wesi-3.(a) Umfanekiso weMikroskopu weringi eyenziweyo. (b) Ugqithiso lwembonakalo yeringi yeresonator ene parameters ezahlukeneyo zesikhewu. (c) I-spectrum yothumelo elinganisiweyo kunye ne-Lorentzian efakwe kwi-resonator yeringi enesithuba se-1000 nm.
Emva koko, senze i-resonator ye-LToI kwaye savavanya iimpawu zayo. Umzobo wesi-3 (a) ubonisa umfanekiso wemakroskopu obonakalayo weresonator yeringi eyenziweyo. Iringi yeresonator ibonakalisa uqwalaselo lwe "racetrack", equka ummandla ogobileyo oneradiyasi ye-100 µm kunye nommandla othe tye we-100 µm ubude. Ububanzi be-gap phakathi kweringi kunye ne-bus waveguide core iyahluka ngokunyuka kwe-200 nm, ngokukodwa kwi-800, 1000, kunye ne-1200 nm. Umzobo wesi-3 (b) ubonisa imbonakalo yothumelo kwisithuba ngasinye, ebonisa ukuba umlinganiselo wokutshabalala uyatshintsha ngobungakanani besithuba. Kwezi mbonakalo, sigqibe kwelokuba umsantsa we-1000 nm ubonelela ngeemeko zokudibanisa eziphantse zibe zinzima, njengoko ubonisa owona mlinganiselo uphakamileyo wokutshabalala kwe- -26 dB.
Ukusebenzisa i-resonator edibeneyo edibeneyo, siqikelele umgangatho womgangatho (i-Q factor) ngokufaka i-spectrum yokuhambisa umgca kunye ne-Lorentzian curve, ukufumana i-Q factor yangaphakathi ye-1.1 yezigidi, njengoko kuboniswe kuMfanekiso 3 (c). Kulwazi lwethu, lo ngumboniso wokuqala weringi yeringi ye-LToI edityaniswe ngamaza. Ngokucacileyo, ixabiso le-Q esilifumeneyo liphezulu kakhulu kunelo le-fiber-coupled LToI microdisk resonators [9].
Isiphelo:Siphuhlise i-LToI waveguide kunye nokulahlekelwa kwe-0.28 dB / cm kwi-1550 nm kunye ne-ring resonator Q factor ye-1.1 yezigidi. Ukusebenza okufunyenweyo kuthelekiseka naleyo ye-state-of-the-art yelahleko ephantsi ye-LNoI waveguides. Ukongeza, siphonononge i-χ(3) yokungahambelani kwe-LToI eyenziweyo ye-waveguide ye-on-chip engasebenziyo.
Ixesha lokuposa: Nov-20-2024