Iindlela eziphambili zokukhulisa i-silicon carbide crystals enye iquka i-Physical Vapor Transport (PVT), i-Top-Seeded Solution Growth (TSSG), kunye ne-High-Temperature Chemical Vapor Deposition (HT-CVD).

Phakathi kwezi, indlela ye-PVT iye yaba yeyona ndlela iphambili kwimveliso yemizi-mveliso ngenxa yokuseta izixhobo ezilula, ukusebenza ngokulula kunye nolawulo, kunye nezixhobo ezisezantsi kunye neendleko zokusebenza.

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Amanqaku oBuchule aPhambili wokuKhula kwe-SiC Crystal usebenzisa i-PVT Method

Ukukhulisa i-silicon carbide crystals usebenzisa indlela ye-PVT, iinkalo ezininzi zobugcisa kufuneka zilawulwe ngononophelo:

1. Ukucoceka kwezinto zeGrafite kwiNdawo yeThermal
   Izinto zegraphite ezisetyenziswe kwi-crystal yokukhula kwe-thermal field kufuneka zihlangabezane neemfuno ezingqongqo zokucoceka. Umxholo wokungcola kumacandelo egraphite kufuneka ube ngaphantsi kwe-5 × 10⁻⁶, kunye ne-insulation felts ngaphantsi kwe-10 × 10⁻⁶. Ngokukodwa, iziqulatho ze-boron (B) kunye ne-aluminium (Al) nganye kufuneka ibe ngaphantsi kwe-0.1×10⁻⁶.

2. I-Polarity echanekileyo yeCrystal yeMbewu
   Idatha ye-Empirical ibonisa ukuba i-C-face (0001) ifanelekile ekukhuleni i-crystals ye-4H-SiC, ngelixa i-Si-face (0001) ifanelekile ukukhula kwe-6H-SiC.

3. Ukusetyenziswa kweekristale zembewu ezingaphandle kwe-Axis
   Imbewu ye-off-axis inokutshintsha i-symmetry yokukhula, inciphise iziphene zekristale, kwaye ikhuthaze umgangatho ongcono wekristale.

4. UbuChwepheshe boBonding beCrystal beMbewu
   Ukudibanisa okufanelekileyo phakathi kwekristale yembewu kunye nomnini kubalulekile ukuzinza ngexesha lokukhula.

5. Ukugcina uzinzo kuNxibelelwano lokuKhula
   Ngethuba lomjikelezo wonke wokukhula kwekristale, ujongano lokukhula kufuneka luhlale luzinzile ukuze kuqinisekiswe uphuhliso oluphezulu lwekristale.

 

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Ubuchwephesha obungundoqo kuHlumo lwe-SiC Crystal

1. I-Doping Technology ye-SiC Powder

I-Doping SiC powder kunye ne-cerium (Ce) inokuzinzisa ukukhula kwepolytype enye efana ne-4H-SiC. Uqheliselo lubonise ukuba iCe doping inoku:

• Ukwandisa izinga lokukhula kweekristale zeSiC;

• Ukuphucula ukuqhelaniswa nekristale ukwenzela ukukhula okufanayo kunye nokwalathiso;

• Ukunciphisa ukungcola kunye neziphene;

• Ukuthintela ukubola kwekristale ngasemva;

• Yandisa inqanaba lesivuno sekristale enye.

2. Ulawulo lwe-Axial kunye neRadial Thermal Gradients

Iqondo lobushushu le-Axial lichaphazela i-crystal polytype kunye nesantya sokukhula. I-gradient encinci kakhulu ingakhokelela ekufakweni kwe-polytype kunye nokunciphisa ukuthuthwa kwezinto eziphathekayo kwisigaba somphunga. Ukuphucula zombini i-axial kunye ne-radial gradients ibalulekile ekukhuleni kwekristale ngokukhawuleza kunye nozinzile kunye nomgangatho ongaguqukiyo.

3. I-Basal Plane Dislocation (BPD) iTekhnoloji yoLawulo

Ii-BPDs zenza ubukhulu becala ngenxa yoxinzelelo lwe-chear oludlula umda obalulekileyo kwiikristale ze-SiC, iinkqubo zokutyibilika ezisebenzayo. Njengoko ii-BPD zithe gqolo kwicala lokukhula, zihlala zivela ngexesha lokukhula kwekristale kunye nokupholisa. Ukunciphisa uxinzelelo lwangaphakathi kunokunciphisa kakhulu ubuninzi be-BPD.

4. Ulawulo loLungelelwaniso lweSigaba soMphunga

Ukwandisa i-carbon-to-silicon ratio kwisigaba somphunga yindlela eqinisekisiweyo yokukhuthaza ukukhula kwe-polytype enye. Umlinganiselo ophezulu we-C / Si unciphisa i-macrostep bunching kwaye igcina ilifa lomhlaba ukusuka kwikristale yembewu, ngaloo ndlela icinezela ukubunjwa kweepolytypes ezingafunekiyo.

5. Iindlela zokuKhula koxinzelelo oluphantsi

Uxinzelelo ngexesha lokukhula kwekristale kunokukhokelela kwiinqwelomoya ezigobileyo, iintanda, kunye noxinzelelo oluphezulu lwe-BPD. Ezi ziphene zinokugqithiselwa kwi-epitaxial layers kwaye zibe nefuthe elibi ekusebenzeni kwesixhobo.

Izicwangciso ezininzi zokunciphisa uxinzelelo lwangaphakathi lwekristale ziquka:

• Ukulungelelanisa ukuhanjiswa kwentsimi ye-thermal kunye neeparameters zenkqubo ukukhuthaza ukukhula okusondeleyo;

• Ukuphucula uyilo lwe-crucible ukuvumela ikristale ukuba ikhule ngokukhululekileyo ngaphandle komqobo womatshini;

• Ukuphucula ukwakheka kwesibambi sembewu ukunciphisa ukungafani kokwanda kwe-thermal phakathi kwembewu kunye negraphite ngexesha lokufudumeza, rhoqo ngokushiya i-2 mm isithuba phakathi kwembewu kunye nesibambi;

• Ukucocwa kweenkqubo ze-annealing, ukuvumela ikristale ukuba iphole phantsi nesithando somlilo, kunye nokulungelelanisa ubushushu kunye nobude bexesha lokukhulula ngokupheleleyo uxinzelelo lwangaphakathi.

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Iimpawu kwiTekhnoloji yokuKhula kweSiC Crystal

1. Iisayizi ezinkulu zeCrystal
I-SiC enye i-crystal diameters inyukile ukusuka kwiimilimitha ezimbalwa ukuya kwi-6-intshi, i-8-intshi, kunye ne-12-intshi ye-wafers. Ii-wafers ezinkulu zongeza ukusebenza kakuhle kwemveliso kwaye zinciphisa iindleko, ngelixa zihlangabezana neemfuno zezicelo zesixhobo samandla aphezulu.

2. Umgangatho ophezulu weCrystal
Iikristale zeSiC ezikumgangatho ophezulu ziyimfuneko kwizixhobo zokusebenza eziphezulu. Ngaphandle kophuculo oluphawulekayo, iikristale zangoku zisabonisa iziphene ezifana ne-micropipes, i-dislocation, kunye nokungcola, konke oku kunokunciphisa ukusebenza kwesixhobo kunye nokuthembeka.

3. UkuNcitshiswa kweendleko
Imveliso yekristale ye-SiC isabiza kakhulu, inciphisa ukwamkelwa okubanzi. Ukunciphisa iindleko ngeenkqubo zokukhula eziphuculweyo, ukwandisa ukusebenza kakuhle kwemveliso, kunye neendleko ezisezantsi zemathiriyeli ekrwada kubalulekile ekwandiseni izicelo zemarike.

4. Intelligent Manufacturing
Ngenkqubela phambili kubukrelekrele bokwenziwa kunye nobuchwepheshe bedatha enkulu, ukukhula kwekristale yeSiC kuqhubela phambili kubukrelekrele, iinkqubo ezizenzekelayo. Iinzwa kunye neenkqubo zokulawula zinokubeka iliso kwaye zilungelelanise iimeko zokukhula ngexesha langempela, ukuphucula ukuzinza kwenkqubo kunye nokuqikelelwa. Uhlalutyo lwedatha lunokwandisa ngakumbi iiparamitha zenkqubo kunye nomgangatho wekristale.

Uphuhliso lomgangatho ophezulu we-SiC yetekhnoloji yokukhula kwekristale enye yeyona nto kugxilwe kuyo kuphando lwezixhobo ze-semiconductor. Njengoko iteknoloji iqhubela phambili, iindlela zokukhula kwekristale ziya kuqhubeka ziguquka kwaye ziphuculwe, zibonelela ngesiseko esiluqilima sezicelo ze-SiC kwiqondo lokushisa eliphezulu, i-high-frequency, kunye nezixhobo zombane eziphezulu.