Izinto Ezibalulekileyo Eziqwalaselweyo Kwilungiselelo Le-Silicon Carbide Elilodwa Elikumgangatho Ophezulu

Iindlela eziphambili zokulungiselela i-silicon single crystal ziquka: Uthutho lwe-Physical Vapor (PVT), i-Top-Seeded Solution Growth (TSSG), kunye ne-High-Temperature Chemical Vapor Deposition (HT-CVD). Phakathi kwezi, indlela ye-PVT iyasetyenziswa kakhulu kwimveliso yemizi-mveliso ngenxa yezixhobo zayo ezilula, ukulula kolawulo, kunye neendleko eziphantsi zezixhobo kunye nokusebenza.

Amanqaku abalulekileyo obuchwephesha ekukhuleni kwePVT yeekristale zeSilicon Carbide

Xa kukhuliswa iikristale ze-silicon carbide usebenzisa indlela ye-Physical Vapor Transport (PVT), kufuneka kuqwalaselwe ezi nkalo zobugcisa zilandelayo:

1. Ubumsulwa bezinto zeGraphite kwiGumbi lokuKhula: Umxholo wokungcola kwizixhobo zegraphite kufuneka ube ngaphantsi kwe-5×10⁻⁶, ngelixa umxholo wokungcola kwifelithi yokukhusela kufuneka ube ngaphantsi kwe-10×10⁻⁶. Izinto ezifana ne-B kunye ne-Al kufuneka zigcinwe ngaphantsi kwe-0.1×10⁻⁶.
2. Ukhetho oluchanekileyo lwe-Crystal Polarity yeMbewu: Izifundo ezibonisa ukuba ubuso be-C (0001) bufanelekile ekukhuliseni iikristale ze-4H-SiC, ngelixa ubuso be-Si (0001) busetyenziselwa ekukhuliseni iikristale ze-6H-SiC.
3. Ukusetyenziswa kweekristale zembewu ezingahambelaniyo ne-axis: Iikristale zembewu ezingahambelaniyo ne-axis zinokutshintsha ulungelelwaniso lokukhula kwekristale, zinciphise iziphene kwikristale.
4. Inkqubo yokudibanisa ikristale yembewu ekumgangatho ophezulu.
5. Ukugcina Uzinzo lweCrystal Growth Interface ngexesha loMjikelo woKhula.

Iiteknoloji eziphambili zokukhula kwekristale yeSilicon Carbide

1. Itekhnoloji yokuDopa kwiSilicon Carbide Powder
   Ukufaka i-Ce powder kwi-silicon carbide powder ngokufanelekileyo kunokuzinzisa ukukhula kweekristale ze-4H-SiC single. Iziphumo ezibonakalayo zibonisa ukuba i-Ce doping inokwenza oku kulandelayo:

• Yandisa izinga lokukhula kweekristale ze-silicon carbide.
• Lawula indlela okukhula ngayo ikristale, uyenze ifane kwaye ihlale injalo.
• Nciphisa ukwakheka kokungcola, unciphise iziphene kwaye wenze kube lula ukuveliswa kweekristale ezikumgangatho ophezulu kunye neekristale ezikumgangatho ophezulu.
• Nqanda ukugqwala kwekristale ngasemva kwaye uphucule imveliso yekristale enye.

• Itekhnoloji yoLawulo lweGradient yoBushushu be-Axial kunye ne-Radial
  I-axial temperature gradient ichaphazela kakhulu uhlobo lokukhula kwekristale kunye nokusebenza kakuhle kwayo. I-gradient yobushushu encinci kakhulu inokukhokelela ekwakhiweni kwe-polycrystalline kwaye inciphise amazinga okukhula. I-axial temperature gradients efanelekileyo ye-axial kunye ne-radial temperature yenza kube lula ukukhula kwekristale ye-SiC ngokukhawuleza ngelixa kugcinwa umgangatho wekristale ozinzileyo.
• Iteknoloji yoLawulo lweBasal Plane Dislocation (BPD)
  Iziphene ze-BPD zivela ikakhulu xa uxinzelelo lwe-shear kwi-crystal ludlula uxinzelelo olubalulekileyo lwe-shear lwe-SiC, luvuselela iinkqubo zokutyibilika. Ekubeni ii-BPD zithe nkqo kwicala lokukhula kwe-crystal, zenzeka ngokuyintloko ngexesha lokukhula kwe-crystal kunye nokuphola.
• Iteknoloji yoLungiso lweSilinganiselo soMphunga weSigaba
  Ukwandisa umlinganiselo wekhabhoni-kwi-silicon kwindawo yokukhula yindlela esebenzayo yokuzinzisa ukukhula kwekristale enye. Umlinganiselo ophezulu wekhabhoni-kwi-silicon unciphisa ukubuthana okukhulu kwamanyathelo, ugcina ulwazi lokukhula komphezulu wekristale yembewu, kwaye uthintela ukwakheka kwe-polytype.
• Itekhnoloji yoLawulo oluPhantsi koXinzelelo
  Uxinzelelo ngexesha lokukhula kwekristale lunokubangela ukugoba kweenqwelo-moya zekristale, nto leyo ekhokelela ekubeni umgangatho wekristale ube mbi okanye nokuba uqhekeke. Uxinzelelo oluphezulu lukwanyusa ukuqhekeka kweenqwelo-moya zesiseko, nto leyo enokuchaphazela kakubi umgangatho we-epitaxial layer kunye nokusebenza kwesixhobo.

Umfanekiso wokuskena we-SiC wafer ye-intshi ezi-6

Iindlela zokunciphisa uxinzelelo kwiikristale:

• Lungisa usasazo lwentsimi yobushushu kunye neeparamitha zenkqubo ukuze kuvumeleke ukukhula okusondeleleneyo kweekristale zeSiC enye.
• Lungiselela ulwakhiwo lwe-crucible ukuvumela ukukhula kwekristale ngokukhululekileyo ngaphandle kwemida emininzi.
• Guqula iindlela zokulungisa ikristale yembewu ukuze kuncitshiswe ukungalingani kokukhula kobushushu phakathi kwekristale yembewu kunye nesibambi segrafiti. Indlela eqhelekileyo kukushiya umsantsa we-2 mm phakathi kwesibambi sekristale yembewu kunye nesibambi segrafiti.
• Phucula iinkqubo zokuqhoboshela ngokusebenzisa ukuqhoboshela kwesithando somlilo esingaphakathi, ulungise ubushushu kunye nobude bexesha lokuqhoboshela ukuze ukhulule ngokupheleleyo uxinzelelo lwangaphakathi.

Iindlela Zekamva kwiTekhnoloji Yokukhula kweCrystal yeSilicon Carbide

Ukujonga phambili, ubuchwepheshe bokulungiselela i-SiC single crystal obukumgangatho ophezulu buza kuphuhliswa ngale ndlela ilandelayo:

1. Ukukhula Okukhulu
   Ububanzi beekristale ze-silicon carbide single buguquke ukusuka kwiimilimitha ezimbalwa ukuya kwiisentimitha ezi-6, iisentimitha ezi-8, kunye nobukhulu obukhulu obuziisentimitha ezili-12. Iikristale ze-SiC ezinkulu ziphucula ukusebenza kakuhle kwemveliso, zinciphisa iindleko, kwaye zihlangabezana neemfuno zezixhobo ezinamandla aphezulu.
2. Ukukhula Okusemgangathweni Ophezulu
   Iikristale zeSiC ezikumgangatho ophezulu zibalulekile kwizixhobo ezisebenza kakuhle. Nangona kwenziwe inkqubela phambili enkulu, iziphene ezifana nee-micropipes, ukudilika, kunye nokungcola kusekho, nto leyo echaphazela ukusebenza kwesixhobo kunye nokuthembeka kwaso.
3. Ukuncitshiswa kweendleko
   Ixabiso eliphezulu lokulungiswa kwekristale yeSiC lithintela ukusetyenziswa kwayo kwiindawo ezithile. Ukuphucula iinkqubo zokukhula, ukuphucula ukusebenza kakuhle kwemveliso, kunye nokunciphisa iindleko zezinto eziluhlaza kunokunceda ukunciphisa iindleko zemveliso.
4. Ukukhula Okukrelekrele
   Ngokuqhubela phambili kwi-AI kunye ne-big data, iteknoloji yokukhula kwekristale ye-SiC iya kwamkela ngakumbi izisombululo ezikrelekrele. Ukubeka esweni nokulawula ngexesha langempela kusetyenziswa izinzwa kunye neenkqubo ezizenzekelayo kuya kuphucula uzinzo lwenkqubo kunye nolawulo. Ukongeza, uhlalutyo lwedatha enkulu lunokuphucula iiparameter zokukhula, luphucule umgangatho wekristale kunye nokusebenza kakuhle kwemveliso.

Itekhnoloji yokulungiselela i-silicon carbide single crystal esemgangathweni yeyona nto iphambili kuphando lwezinto ze-semiconductor. Njengoko itekhnoloji iqhubela phambili, iindlela zokukhulisa i-SiC crystal ziya kuqhubeka zikhula, zibonelela ngesiseko esiqinileyo sezicelo kwiindawo ezinobushushu obuphezulu, ezisebenzisa i-frequency ephezulu, kunye namandla aphezulu.