Iingqwalaselo eziphambili zoMgangatho oPhezulu weSilicon Carbide ULungiselelo lweCrystal enye

Iindlela eziphambili ze-silicon enye yokulungiselela i-crystal ibandakanya: I-Physical Vapor Transport (PVT), i-Top-Seeded Solution Growth (TSSG), kunye ne-High-Temperature Chemical Vapor Deposition (HT-CVD). Phakathi kwezi, indlela ye-PVT yamkelwa ngokubanzi kwimveliso yoshishino ngenxa yezixhobo zayo ezilula, ukukhululeka kokulawula, kunye nezixhobo eziphantsi kunye neendleko zokusebenza.

Amanqaku oBuchule aPhambili kuHlumo lwePVT lweSilicon Carbide Crystals

Xa ukhulisa i-silicon carbide crystals usebenzisa indlela ye-Physical Vapor Transport (PVT), le miba ilandelayo yobugcisa kufuneka iqwalaselwe:

1. Ukucoceka kwezinto zeGraphite kwiGumbi lokuKhula: Umxholo wokungcola kumacandelo egraphite kufuneka ube ngaphantsi kwe-5 × 10⁻⁶, ngelixa umxholo wokungcola kwi-insulation uvakalelwa kufuneka ube ngaphantsi kwe-10 × 10⁻⁶. Izinto ezifana ne-B kunye ne-Al kufuneka zigcinwe ngaphantsi kwe-0.1 × 10⁻⁶.
2. Imbewu echanekileyo yoKhetho lwe-Crystal Polarity: Izifundo zobungqina zibonisa ukuba ubuso be-C (0001) bufanelekile ekukhuleni i-crystals ye-4H-SiC, ngelixa ubuso be-Si (0001) busetyenziselwa ukukhula kwe-crystals ye-6H-SiC.
3. Ukusetyenziswa kweeCrystals zembewu ye-Off-Axis: I-crystals yembewu engaphandle kwe-axis inokuguqula i-symmetry yokukhula kwekristale, ukunciphisa iziphene kwi-crystal.
4. Inkqubo yoBonding yeCrystal ekumgangatho ophezulu.
5. Ukugcina uzinzo lweCrystal Growth Interface Ngexesha lokuKhula koMjikelo.

Ubuchwephesha obuphambili bokuKhula kweCrystal Carbide yeSilicon

1. ITekhnoloji yeDoping yeSilicon Carbide Powder
   I-Doping i-silicon carbide powder kunye nenani elifanelekileyo le-Ce linokuzinzisa ukukhula kwe-4H-SiC iikristale enye. Iziphumo ezisebenzayo zibonisa ukuba i-Ce doping inoku:

• Ukunyusa izinga lokukhula kwe-silicon carbide crystals.
• Lawula i-orientation yokukhula kwekristale, ukuyenza ibe yinto efanayo kwaye rhoqo.
• Ukucinezela ukubunjwa kokungcola, ukunciphisa iziphene kunye nokuququzelela ukuveliswa kwe-crystal eyodwa kunye ne-crystals ephezulu.
• Ukuthintela ukubola kwekristale ngasemva kunye nokuphucula isivuno se-crystal enye.

• ITekhnoloji yoLawulo lweAxial kunye neRadial Temperature Gradient Control
  Ubushushu be-axial gradient buchaphazela ngokuyintloko uhlobo lokukhula kwekristale kunye nokusebenza kakuhle. I-gradient encinci yeqondo lokushisa inokukhokelela ekubunjweni kwe-polycrystalline kunye nokunciphisa amazinga okukhula. I-axial efanelekileyo kunye ne-radial gradients yokushisa iququzelela ukukhula kwekristale ye-SiC ngokukhawuleza ngelixa igcina umgangatho we-crystal ozinzileyo.
• I-Basal Plane Dislocation (BPD) iTekhnoloji yoLawulo
  Iziphene ze-BPD zivela ikakhulu xa uxinzelelo lwe-chear kwi-crystal ludlula uxinzelelo olubalulekileyo lwe-SiC, i-activate slip systems. Ekubeni i-BPDs i-perpendicular kulwalathiso lokukhula kwekristale, ngokuyinhloko zenza ngexesha lokukhula kwekristale kunye nokupholisa.
• I-Tekhnoloji yoLungiso lweSigaba soMphunga weSigaba soMphunga
  Ukwandisa umlinganiselo we-carbon-to-silicon kwindawo yokukhula ngumlinganiselo osebenzayo wokuzinzisa ukukhula kwekristale enye. Umlinganiselo ophezulu we-carbon-to-silicon unciphisa ukuhlangana kwamanyathelo amakhulu, ugcina ulwazi lokukhula kwekristale yembewu, kunye nokucinezela ukubunjwa kwe-polytype.
• Itekhnoloji yoLawulo loxinzelelo oluphantsi
  Uxinzelelo ngexesha lokukhula kwekristale kunokubangela ukugoba kweenqwelomoya zekristale, ezikhokelela kumgangatho ophantsi wekristale okanye nokuqhekeka. Uxinzelelo oluphezulu lukwanyusa i-basal plane dislocations, enokuthi ichaphazele kakubi umgangatho we-epitaxial layer kunye nokusebenza kwesixhobo.

6-intshi yeSiC wafer umfanekiso wokuskena

Iindlela zokunciphisa uxinzelelo kwiiCrystals:

• Lungisa ukuhanjiswa kwentsimi yeqondo lobushushu kunye neeparamitha zenkqubo ukuvumela ukukhula okukufutshane kwe-SiC enye yeekristale.
• Lungiselela ukwakheka kwe-crucible ukuvumela ukukhula kwekristale yasimahla kunye nemiqobo encinci.
• Lungisa iindlela zokulungisa ikristale yembewu ukunciphisa ukungahambelani kokwanda kwe-thermal phakathi kwekristale yembewu kunye nesibambi segraphite. Indlela eqhelekileyo kukushiya isithuba se-2 mm phakathi kwekristale yembewu kunye nesibambi segraphite.
• Ukuphucula iinkqubo zokufunxa ngokusetyenziswa kwe-in-situ annealing, ukulungelelanisa ubushushu be-annealing kunye nobude bexesha ukukhulula ngokupheleleyo uxinzelelo lwangaphakathi.

IiNdlela zekamva kwiSilicon Carbide Crystal yokuKhula kweTekhnoloji

Ukujonga phambili, itekhnoloji ekumgangatho ophezulu we-SiC yokulungiselela ikristale enye iya kuphuhliswa kwezi ndlela zilandelayo:

1. Ukukhula Okukhulu
   Ububanzi be-silicon carbide iikristale enye iye yavela kwiimilimitha ezimbalwa ukuya kwi-6-intshi, i-intshi ezi-8, kunye nobukhulu be-intshi ezili-12. Iikristale ze-SiC ezinobubanzi obukhulu ziphucula ukusebenza kakuhle kwemveliso, ukunciphisa iindleko, kunye nokuhlangabezana neemfuno zezixhobo eziphezulu zamandla.
2. UHlumo oluPhezulu
   Iikristale zeSiC ezikumgangatho ophezulu ziyimfuneko kwizixhobo zokusebenza eziphezulu. Nangona kwenziwe inkqubela ebonakalayo, iziphene ezinje ngemicropipes, ukususwa kwindawo, kunye nokungcola kusekho, okuchaphazela ukusebenza kwesixhobo kunye nokuthembeka.
3. UkuNcitshiswa kweendleko
   Iindleko eziphezulu ze-SiC crystal yokulungiselela imida yokusetyenziswa kwayo kwiinkalo ezithile. Ukuphucula iinkqubo zokukhula, ukuphucula ukusebenza kakuhle kwemveliso, kunye nokunciphisa iindleko zemathiriyeli ekrwada kunokunceda ukunciphisa iindleko zemveliso.
4. Ukukhula ngobukrelekrele
   Ngokuhambela phambili kwi-AI kunye nedatha enkulu, itekhnoloji yokukhula kwekristale yeSiC iya kusanda kwamkela izisombululo zobukrelekrele. Ukubeka iliso ngexesha langempela kunye nokulawula usebenzisa i-sensor kunye neenkqubo ezizenzekelayo ziya kuphucula ukuzinza kunye nokulawula inkqubo. Ukongeza, uhlalutyo lwedatha enkulu lunokwandisa iiparamitha zokukhula, ukuphucula umgangatho wekristale kunye nokusebenza kakuhle kwemveliso.

Umgangatho ophezulu we-silicon carbide itekhnoloji yokulungiselela ikristale enye yeyona nto iphambili ekugxilwe kuyo kuphando lwezinto ze-semiconductor. Njengoko iteknoloji iqhubela phambili, ubuchule bokukhula kwekristale ye-SiC buya kuqhubeka nokuvela, ukubonelela ngesiseko esiluqilima sezicelo kubushushu obuphezulu, ubuninzi obuphezulu, kunye nemimandla yamandla aphezulu.