I-Silicon carbide (i-SiC), njengohlobo lwe-wide band gap semiconductor material, idlala indima ebalulekileyo ekusetyenzisweni kwesayensi kunye nobuchwepheshe bale mihla. I-Silicon carbide inozinzo oluhle kakhulu lwe-thermal, ukunyamezela kwintsimi yombane ephezulu, ukuqhuba ngabom kunye nezinye iimpawu ezibalaseleyo zomzimba kunye ne-optical, kwaye isetyenziswa ngokubanzi kwizixhobo ze-optoelectronic kunye nezixhobo zelanga. Ngenxa yokunyuka kwemfuno yezixhobo ze-elektroniki ezisebenza ngakumbi kunye nezizinzileyo, ukubamba itekhnoloji yokukhula ye-silicon carbide iye yaba yindawo eshushu.
Ke unolwazi olungakanani malunga nenkqubo yokukhula kweSiC?
Namhlanje siza kuxubusha iindlela ezintathu eziphambili zokukhula kwe-silicon carbide crystals enye: ukuthuthwa komphunga womzimba (PVT), i-epitaxy yesigaba se-liquid (LPE), kunye nokushisa okuphezulu kwe-chemical vapor deposition (HT-CVD).
Indlela yokuTshintshela uMphunga (PVT)
Indlela yokudlulisa umphunga yenye yezona nkqubo zixhaphakileyo zokukhula kwesilicon carbide. Ukukhula kwekristale enye ye-silicon carbide kuxhomekeke ikakhulu kwi-sublimation ye-sic powder kunye nokubekwa kwakhona kwikristale yembewu phantsi kweemeko zobushushu obuphezulu. Kwi-crucible yegraphite evaliweyo, i-silicon carbide powder ifudunyezwa kubushushu obuphezulu, ngokulawulwa kweqondo lobushushu, i-silicon carbide steam iyajiya kumphezulu wekristale yembewu, kwaye ngokuthe ngcembe ikhula ubukhulu bekristale enye.
Uninzi lwe-monocrystalline SiC esibonelela ngayo ngoku yenziwe ngale ndlela yokukhula. Ikwayeyona ndlela iphambili kushishino.
Inqanaba lolwelo lwe-epitaxy (LPE)
Iikristale ze-silicon ze-carbide zilungiswe yi-epitaxy yesigaba solwelo ngokusebenzisa inkqubo yokukhula kwekristale kwi-interface e-slid-liquid. Kule ndlela, i-silicon carbide powder iyachithwa kwisisombululo se-silicon-carbon kwiqondo lokushisa eliphezulu, kwaye ke iqondo lokushisa liyancipha ukuze i-silicon carbide ikhutshwe kwisisombululo kwaye ikhule kwiikristali zembewu. Inzuzo ephambili yendlela ye-LPE kukukwazi ukufumana iikristale eziphezulu kwiqondo lokushisa eliphantsi lokukhula, ixabiso liphantsi, kwaye lifanelekile kwimveliso enkulu.
Ubushushu obuphezulu beMicimbi yoMphunga (HT-CVD)
Ngokuzisa igesi equlethe i-silicon kunye nekhabhoni kwigumbi lokuphendula kwiqondo lokushisa eliphezulu, i-crystal layer ye-silicon carbide ifakwe ngokuthe ngqo kumphezulu we-crystal yembewu ngokusabela kweekhemikhali. Inzuzo yale ndlela kukuba izinga lokuhamba kunye neemeko zokusabela kwegesi zinokulawulwa ngokuchanekileyo, ukuze ufumane i-silicon carbide crystal enobunyulu obuphezulu kunye neziphene ezimbalwa. Inkqubo ye-HT-CVD inokuvelisa iikristale ze-silicon carbide ezineempawu ezigqwesileyo, ezibaluleke kakhulu kwizicelo apho kufuneka izinto ezikumgangatho ophezulu kakhulu.
Inkqubo yokukhula kwe-silicon carbide sisiseko sokusetyenziswa kwayo kunye nophuhliso. Ngokuqhubeka ngokutsha kwetekhnoloji kunye nokuphucula, ezi ndlela zintathu zokukhula zidlala indima yazo ukuze zihlangabezane neemfuno zezihlandlo ezahlukeneyo, ziqinisekisa indawo ebalulekileyo ye-silicon carbide. Ngokunzulu kophando kunye nenkqubela phambili yezobuchwepheshe, inkqubo yokukhula kwezinto ze-silicon carbide iya kuqhubeka iphuculwe, kwaye ukusebenza kwezixhobo zombane kuya kuphuculwa ngakumbi.
(ukuhlola)
Ixesha lokuposa: Jun-23-2024