I-Silicon carbide (SiC), njengohlobo lwezixhobo ze-semiconductor ezibanzi, idlala indima ebaluleke ngakumbi ekusebenziseni isayensi netekhnoloji yanamhlanje. I-Silicon carbide inozinzo oluhle kakhulu lobushushu, ukunyamezelana okuphezulu kwamandla ombane, ukuqhuba ngokuzithandela kunye nezinye iipropati zomzimba neze-optical ezibalaseleyo, kwaye isetyenziswa kakhulu kwizixhobo ze-optoelectronic kunye nezixhobo zelanga. Ngenxa yokwanda kwemfuno yezixhobo ze-elektroniki ezisebenzayo nezizinzileyo, ukuqonda itekhnoloji yokukhula kwe-silicon carbide kuye kwaba yindawo ethandwayo.
Ngoko ke ungakanani ulwazi onalo ngenkqubo yokukhula kweSiC?
Namhlanje siza kuxoxa ngeendlela ezintathu eziphambili zokukhula kweekristale ze-silicon carbide single: ukuthuthwa komphunga ngokwasemzimbeni (PVT), i-liquid phase epitaxy (LPE), kunye ne-high temperature chemical vapor deposition (HT-CVD).
Indlela yokudlulisa umphunga emzimbeni (i-PVT)
Indlela yokudlulisa umphunga obonakalayo yenye yezona nkqubo zokukhula kwe-silicon carbide ezisetyenziswa kakhulu. Ukukhula kwe-single crystal silicon carbide kuxhomekeke kakhulu kwi-sublimation ye-sic powder kunye nokuphinda kubekwe kwi-seed crystal phantsi kweemeko zobushushu obuphezulu. Kwi-crucible evaliweyo ye-graphite, i-silicon carbide powder ifudunyezwa ukuya kubushushu obuphezulu, ngokulawula i-gradient yobushushu, umphunga we-silicon carbide uyaqina phezu komphezulu we-seed crystal, kwaye kancinci kancinci ikhula ibe yi-single crystal enkulu.
Uninzi lwe-monocrystalline SiC esizibonelelayo ngoku zenziwe ngale ndlela yokukhula. Ikwayindlela ephambili kushishino.
I-epitaxy yesigaba solwelo (i-LPE)
Iikristale ze-silicon carbide zilungiswa nge-epitaxy yesigaba solwelo ngenkqubo yokukhula kwekristale kwindawo yokuhlangana kwe-solid-liquid. Kule ndlela, umgubo we-silicon carbide uyanyibilika kwisisombululo se-silicon-carbon kubushushu obuphezulu, uze emva koko ubushushu buncitshiswe ukuze i-silicon carbide ikhutshwe kwisisombululo kwaye ikhule kwiikristale zembewu. Inzuzo ephambili yendlela ye-LPE kukukwazi ukufumana iikristale ezikumgangatho ophezulu kubushushu obuphantsi bokukhula, ixabiso liphantsi, kwaye lifanelekile kwimveliso enkulu.
Ubushushu obuphezulu bokutsalwa komphunga wekhemikhali (HT-CVD)
Ngokungenisa igesi equlethe i-silicon kunye ne-carbon kwigumbi lokusabela kubushushu obuphezulu, umaleko omnye we-silicon carbide ubekwa ngqo kumphezulu we-crystal yembewu ngokusebenzisa i-chemical reaction. Inzuzo yale ndlela kukuba izinga lokuhamba kunye neemeko zokusabela kwegesi zinokulawulwa ngokuchanekileyo, ukuze kufunyanwe i-silicon carbide crystal enobunyulu obuphezulu kunye neziphene ezimbalwa. Inkqubo ye-HT-CVD inokuvelisa iikristale ze-silicon carbide ezineempawu ezintle, ezibaluleke kakhulu kwizicelo apho kufuneka izixhobo ezikumgangatho ophezulu kakhulu.
Inkqubo yokukhula kwe-silicon carbide yeyona nto ibalulekileyo ekusetyenzisweni nasekuphuhlisweni kwayo. Ngokusebenzisa ubuchule obuqhubekayo bobuchwephesha kunye nokwenza ngcono, ezi ndlela zintathu zokukhula zidlala indima yazo ukuhlangabezana neemfuno zeziganeko ezahlukeneyo, ziqinisekisa indawo ebalulekileyo ye-silicon carbide. Ngobunzulu bophando kunye nenkqubela phambili kwezobuchwepheshe, inkqubo yokukhula kwezinto ze-silicon carbide iya kuqhubeka iphuculwa, kwaye ukusebenza kwezixhobo ze-elektroniki kuya kuphucuka ngakumbi.
(ukugxeka)
Ixesha leposi: Juni-23-2024