Izixhobo zokusila iLaser ezichanekileyo kakhulu kwiiWafers zeSiC eziyi-8-intshi: Itekhnoloji ephambili yokuSebenza kweWafer yeSiC yexesha elizayo

I-silicon carbide (i-SiC) ayisiyoteknoloji ebalulekileyo yokukhusela ilizwe kuphela kodwa ikwayeyona nto ibalulekileyo kumashishini eemoto kunye namandla ehlabathi. Njengenyathelo lokuqala elibalulekileyo ekucutshungulweni kwe-SiC single-crystal, ukunqunyulwa kwe-wafer kumisela ngokuthe ngqo umgangatho wokunciphisa nokupholisha okulandelayo. Iindlela zemveli zokunqunyulwa zihlala zizisa imifantu yomphezulu kunye nomphezulu ongaphantsi komhlaba, zinyusa amazinga okuqhekeka kwe-wafer kunye neendleko zokuvelisa. Ke ngoko, ukulawula umonakalo womphezulu kubalulekile ekuqhubeleni phambili ukwenziwa kwezixhobo ze-SiC.

Okwangoku, ukunqunyulwa kwe-SiC ingot kujongene nemingeni emibini emikhulu:

1. Ukulahleka okukhulu kwezinto ezibonakalayo kwisarha yendabuko ye-multi-wire:Ubunzima obukhulu kunye nokuqhekeka kweSiC kwenza ukuba ikwazi ukugoba nokuqhekeka ngexesha lokusika, ukugaya, kunye nokupolisha. Ngokwedatha ye-Infineon, ukusarha kwe-diamond-resin-bonded multi-wire sawing yendabuko kufikelela kwi-50% yokusetyenziswa kwezinto ekusikeni, kunye nokulahleka okupheleleyo kwe-single-wafer kufikelela kwi-~250 μm emva kokupolisha, okushiya izinto ezincinci ezingasetyenziswa.
2. Ukusebenza okuphantsi kunye nemijikelo yemveliso emide:Izibalo zemveliso zamazwe ngamazwe zibonisa ukuba ukuvelisa ii-wafers ezili-10,000 kusetyenziswa i-24-hour continuous multi-wire sawing kuthatha iintsuku ezingama-273. Le ndlela ifuna izixhobo ezibanzi kunye nezinto ezisetyenziswayo ngelixa ivelisa uburhabaxa obuphezulu kunye nongcoliseko (uthuli, amanzi amdaka).

Ukuze kulungiswe le micimbi, iqela likaNjingalwazi uXiu Xiangqian kwiYunivesithi yaseNanjing liphuhlise izixhobo zokusila nge-laser ezichanekileyo kakhulu zeSiC, zisebenzisa iteknoloji ye-laser ekhawulezayo ukunciphisa iziphene kunye nokunyusa imveliso. Kwi-ingot ye-SiC engama-20-mm, le teknoloji iphinda kabini isivuno se-wafer xa ithelekiswa nokusarha ucingo lwendabuko. Ukongeza, ii-wafers ezisikiweyo nge-laser zibonisa ukufana okuphezulu kwejometri, okuvumela ukunciphisa ubukhulu ukuya kwi-200 μm nge-wafer nganye kunye nokwandisa imveliso.

Iingenelo eziphambili:

• Uphando olugqityiweyo kunye nophuhliso kwizixhobo ezinkulu zeprototype, eziqinisekisiweyo ukuba zinqumle ii-wafers ze-SiC ezizi-4-intshi ezi-1-2 kunye nee-ingots ze-SiC eziqhubayo ezizi-6-intshi.
• Ukusikwa kwe-ingot ye-intshi ezi-8 kuyaqinisekiswa.
• Ixesha lokusika elifutshane kakhulu, imveliso yonyaka ephezulu, kunye nokuphuculwa kwesivuno ngaphezulu kwama-50%.

I-substrate ye-XKH ye-SiC yohlobo lwe-4H-N

Amandla eMarike:

Esi sixhobo sikulungele ukuba sisisombululo esiphambili sokusika ii-inji ze-SiC ezingama-intshi ezi-8, okwangoku zilawulwa zizinto ezithunyelwa ngaphandle zaseJapan ezineendleko eziphezulu kunye nemiqathango yokuthumela ngaphandle. Imfuno yasekhaya yezixhobo zokusika/zokunciphisa nge-laser idlula iiyunithi ezili-1,000, kodwa akukho ndlela zimbi ezenziwe eTshayina. Ubuchwepheshe beYunivesithi yaseNanjing bunexabiso elikhulu kwimarike kunye namandla ezoqoqosho.

Ukuhambelana kwezinto ezininzi:

Ngaphaya kweSiC, ezi zixhobo zixhasa ukucutshungulwa kwe-gallium nitride (GaN), i-aluminium oxide (Al₂O₃), kunye nedayimani nge-laser, nto leyo eyandisa ukusetyenziswa kwayo kwimizi-mveliso.

Ngokuguqula indlela yokucubungula i-SiC wafer, olu tshintsho lujongana nemiqobo ebalulekileyo ekuvelisweni kwee-semiconductor ngelixa luhambelana neendlela zehlabathi zokusebenzisa izixhobo ezisebenza kakuhle nezisebenzisa amandla kakuhle.

Isiphelo​

Njengenkokeli kushishino lokuvelisa i-substrate ye-silicon carbide (SiC), i-XKH igxile ekuboneleleni nge-substrate ze-SiC ezipheleleyo ze-2-12-intshi (kubandakanya uhlobo lwe-4H-N/SEMI, uhlobo lwe-4H/6H/3C) ezenzelwe amacandelo akhula kakhulu njengezithuthi ezintsha zamandla (ii-NEV), ukugcinwa kwamandla e-photovoltaic (PV), kunye nonxibelelwano lwe-5G. Sisebenzisa iteknoloji yokusika i-wafer enomlinganiselo omkhulu kunye netekhnoloji yokucubungula ngokuchanekileyo, sifikelele kwimveliso enkulu ye-substrate ze-8-intshi kunye nokuphumelela kwitekhnoloji yokukhula kwekristale ye-SiC eqhubayo ye-12-intshi, sinciphisa kakhulu iindleko ze-chip nganye. Ukuya phambili, siza kuqhubeka nokwenza ngcono i-ingot-level laser slicing kunye neenkqubo zokulawula uxinzelelo olukrelekrele ukuze siphakamise isivuno se-substrate se-12-intshi ukuya kumanqanaba okhuphiswano lwehlabathi, sinike amandla imboni yasekhaya ye-SiC ukuba iphule ii-monopolies zamazwe ngamazwe kwaye ikhawulezise usetyenziso olunokukhuliswa kwiindawo eziphezulu ezifana neetships ze-automotive-grade kunye nezixhobo zamandla ze-AI server.

I-substrate ye-XKH ye-SiC yohlobo lwe-4H-N