1. Intshayelelo
Nangona uphando lweminyaka emininzi luqhutywe, i-heteroepitaxial 3C-SiC ekhuliswe kwi-silicon substrates ayikafikeleli kumgangatho owaneleyo wekristale kwizicelo ze-elektroniki zoshishino. Ukukhula kudla ngokwenziwa kwi-Si(100) okanye kwi-Si(111) substrates, nganye inika imingeni eyahlukileyo: iindawo ezichasene nesigaba se-(100) kunye nokuqhekeka kwe-(111). Ngelixa iifilimu ezijolise kwi-[111] zibonisa iimpawu ezithembisayo ezifana nokuncipha koxinano lwesiphene, ukuphuculwa kwendlela yokwenza umphezulu, kunye noxinzelelo oluphantsi, iindlela ezahlukeneyo ezifana ne-(110) kunye ne-(211) azikafundwa ngokwaneleyo. Idatha ekhoyo ibonisa ukuba iimeko zokukhula ezifanelekileyo zinokuba zezokujonga ngqo, zenze kube nzima uphando olucwangcisiweyo. Okuphawulekayo kukuba, ukusetyenziswa kwe-higher-Miller-index Si substrates (umz., (311), (510)) kwi-3C-SiC heteroepitaxy akukaze kuxelwe, okushiya indawo ebalulekileyo yophando lokuhlola iindlela zokukhula ezixhomekeke kulwalathiso.
2. Uvavanyo
Iileya ze-3C-SiC zibekwe nge-atmospheric-pressure chemical vapor deposition (CVD) kusetyenziswa iigesi ze-SiH4/C3H8/H2 precursor. Ii-substrates yayiyi-1 cm² Si wafers ezineendlela ezahlukeneyo: (100), (111), (110), (211), (311), (331), (510), (553), kunye ne-(995). Zonke ii-substrates bezikwi-axis ngaphandle kwe-(100), apho ii-wafers ezisikiweyo ze-2° zavavanywa kwakhona. Ukucoca kwangaphambi kokukhula kwakubandakanya ukususwa kwe-ultrasonic kwi-methanol. Iprotokholi yokukhula yayiquka ukususwa kwe-oxide yendalo ngokusebenzisa i-H2 annealing kwi-1000°C, kulandele inkqubo eqhelekileyo yamanyathelo amabini: i-carburization imizuzu eli-10 kwi-1165°C kunye ne-12 sccm C3H8, emva koko i-epitaxy imizuzu engama-60 kwi-1350°C (umlinganiselo we-C/Si = 4) kusetyenziswa i-1.5 sccm SiH4 kunye ne-2 sccm C3H8. Umjikelo ngamnye wokukhula wawuquka iindlela ezine ukuya kwezintlanu ezahlukeneyo zeSi, kunye ne-wafer enye (100) yokubonisa ubuncinci.
3. Iziphumo kunye nengxoxo
Imo yeeleya ze-3C-SiC ezikhuliswe kwii-substrates ezahlukeneyo ze-Si (Umzobo 1) zibonise iimpawu zomphezulu ezahlukeneyo kunye noburhabaxa. Ngokwembonakalo, iisampuli ezikhuliswe kwi-Si(100), (211), (311), (553), kunye ne-(995) zibonakala zifana nesipili, ngelixa ezinye ziqala kubisi ((331), (510)) ukuya kumbala omdaka ((110), (111)). Iindawo ezigudileyo (ezibonisa ulwakhiwo oluhle kakhulu) zifunyenwe kwii-substrates ze-(100)2° off kunye ne-(995). Okumangalisayo kukuba, zonke iileya zahlala zingenaziqhekeko emva kokupholisa, kuquka ne-3C-SiC(111) edla ngokuba noxinzelelo. Ubungakanani besampulu obulinganiselweyo busenokuba buthintele ukuqhekeka, nangona ezinye iisampulu zibonise ukugoba (30-60 μm deflection ukusuka embindini ukuya kumphetho) ezinokubonwa phantsi kwe-optical microscopy kwi-1000× magnification ngenxa yoxinzelelo oluqokelelweyo lobushushu. Iileya ezigobileyo kakhulu ezikhuliswe kwi-substrates ze-Si(111), (211), kunye ne-(553) zibonise iimilo ezigobileyo ezibonisa uxinzelelo lokuxinana, nto leyo efuna umsebenzi ongaphezulu wovavanyo kunye nowethiyori ukuze uhambelane nolwalathiso lwekristale.
Umfanekiso 1 ushwankathela iziphumo ze-XRD kunye ne-AFM (ukuskena kwi-20×20 μ m2) zeeleya ze-3C-SC ezikhuliswe kwi-substrates ze-Si ezineendlela ezahlukeneyo.
Imifanekiso ye-atomic force microscopy (AFM) (Umzobo 2) iqinisekisile ukubonwa kwe-optical. Amaxabiso e-Root-mean-square (RMS) aqinisekisile iindawo ezigudileyo kwi-(100)2° off kunye ne-(995) substrates, eneezakhiwo ezifana neenkozo ezinemilinganiselo esecaleni ye-400-800 nm. Umaleko okhule (110) wawungowona urhabaxa, ngelixa iimpawu ezinde kunye/okanye ezifanayo ezinemida ebukhali ngamanye amaxesha zabonakala kwezinye iindawo ((331), (510)). I-X-ray diffraction (XRD) θ-2θ scans (eshwankathelwe kwiTheyibhile 1) ibonise i-heteroepitaxy ephumelelayo kwi-lower-Miller-index substrates, ngaphandle kwe-Si(110) ebonise iincopho ezixutyiweyo ze-3C-SiC(111) kunye ne-(110) ezibonisa i-polycrystallinity. Olu xube lwe-orientation luye lwaxelwa ngaphambili kwi-Si(110), nangona ezinye izifundo zibone i-3C-SiC ekhethekileyo (111)-oriented, ebonisa ukuba ukulungiswa kwemeko yokukhula kubalulekile. Kwi-Miller indices ≥5 ((510), (553), (995)), akukho ziqongo ze-XRD ezifunyenweyo kulwakhiwo oluqhelekileyo lwe-θ-2θ kuba ezi plane ze-high-index azihlukanisi kule geometry. Ukungabikho kwee-3C-SiC peaks ze-low-index (umz., (111), (200)) kubonisa ukukhula kwe-single-crystalline, kufuna isampuli ethambekileyo ukuze kufunyanwe i-diffraction kwi-plane ze-low-index.
Umfanekiso 2 ubonisa ukubalwa kwe-angle yeplane ngaphakathi kwesakhiwo sekristale ye-CFC.
Ii-engile zekristalografi ezibaliweyo phakathi kwe-high-index kunye ne-low-index planes (Itheyibhile 2) zibonise ukungahambi kakuhle okukhulu (>10°), zichaza ukungabikho kwazo kwi-standard θ-2θ scans. Uhlalutyo lwe-Pole figure lwenziwe kwisampulu esekwe kwi-(995) ngenxa ye-morphology yayo engaqhelekanga ye-granular (enokuthi ivele ekukhuleni kwe-columnar okanye kwi-twinning) kunye ne-roughness ephantsi. Ii-(111) pole figures (Umzobo 3) ezivela kwi-substrate ye-Si kunye ne-3C-SiC layer zaziphantse zifane, ziqinisekisa ukukhula kwe-epitaxial ngaphandle kwe-twinning. Indawo ephakathi ivele kwi-χ≈15°, ihambelana ne-angle yethiyori (111)-(995). Iindawo ezintathu ezilinganayo-symmetry zivele kwiindawo ezilindelekileyo (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° kunye ne-33.6°), nangona indawo ebuthathaka engaqikelelwanga kwi-χ=62°/φ=93.3° ifuna uphando olongezelelweyo. Umgangatho wekristale, ovavanywe ngobubanzi bebala kwi-φ-scans, ubonakala uthembisa, nangona kufuneka umlinganiselo wegophe elishukumayo ukuze kulinganiswe ubungakanani. Amanani eepali zeesampulu ze-(510) kunye ne-(553) asafuneka agqitywe ukuqinisekisa ubume bazo obucingelwayo be-epitaxial.
Umfanekiso 3 ubonisa umzobo wencopho ye-XRD orekhodwe kwisampulu ejolise kwi-(995), ebonisa iiplani (111) ze-Si substrate (a) kunye nomaleko we-3C-SiC (b).
4. Isiphelo
Ukukhula kwe-Heteroepitaxial 3C-SiC kuphumelele kwiindlela ezininzi ze-Si ngaphandle kwe-(110), evelise izinto ze-polycrystalline. I-Si(100)2° off kunye ne-(995) substrates zivelise iileya ezithambileyo (RMS <1 nm), ngelixa i-(111), (211), kunye ne-(553) zibonise ukugoba okubalulekileyo (30-60 μm). I-substrates ezine-index ephezulu zifuna ukuchazwa kwe-XRD okuphambili (umz., imifanekiso ye-pole) ukuqinisekisa i-epitaxy ngenxa yeencopho ze-θ-2θ ezingekhoyo. Umsebenzi oqhubekayo uquka ukulinganisa i-rocking curve, uhlalutyo loxinzelelo lweRaman, kunye nokwandiswa kwiindlela ezongezelelweyo ze-index ephezulu ukuze kugqitywe olu phononongo lokuhlola.
Njengomvelisi odityaniswe ngokuthe nkqo, i-XKH ibonelela ngeenkonzo zobuchwephesha zokucubungula ezenzelwe wena kunye nepotifoliyo epheleleyo ye-silicon carbide substrates, enikezela ngeentlobo ezisemgangathweni nezikhethekileyo eziquka i-4H/6H-N, i-4H-Semi, i-4H/6H-P, kunye ne-3C-SiC, ezifumaneka ngobubanzi ukusuka kwi-2-intshi ukuya kwi-12-intshi. Ubuchule bethu bokukhula kwekristale, umatshini wokulungisa ngokuchanekileyo, kunye nokuqinisekiswa komgangatho buqinisekisa izisombululo ezenzelwe wena ze-elektroniki zamandla, i-RF, kunye nezicelo ezintsha.
Ixesha lokuthumela: Agasti-08-2025