Izixhobo ze-semiconductor ziye zavela ngezizukulwana ezintathu eziguqulayo:
Isizukulwana soku-1 (iSi/iGe) sabeka isiseko sezixhobo ze-elektroniki zanamhlanje,
Isizukulwana sesi-2 (i-GaAs/InP) siphule imiqobo ye-optoelectronic kunye ne-high-frequency ukuze sinike amandla utshintsho lolwazi,
Isizukulwana sesi-3 (iSiC/GaN) ngoku sijongana nemingeni yamandla kunye nokusingqongileyo okugqithisileyo, okuvumela ukungathathi cala kwekhabhoni kunye nexesha le-6G.
Olu phuhliso lubonisa utshintsho oluvela kwindlela yokusebenza eguquguqukayo ukuya kwindlela yokugxila kwisayensi yezinto eziphathekayo.
1. IiSemiconductors zeSizukulwana sokuQala: iSilicon (Si) kunye neGermanium (Ge)
Imvelaphi Yembali
Ngo-1947, iBell Labs yasungula i-germanium transistor, nto leyo eyayiphawula ukuqala kwexesha le-semiconductor. Ngeminyaka yoo-1950, i-silicon yathatha indawo ye-germanium kancinci kancinci njengesiseko seesekethe ezidibeneyo (ii-IC) ngenxa yomaleko wayo we-oxide ozinzileyo (i-SiO₂) kunye neendawo ezininzi zokugcina indalo.
Iipropati zezinto ezibonakalayo
ⅠIsithuba sebhendi:
I-Germanium: 0.67eV (i-bandgap encinci, ithambekele ekuvuzeni umsinga, ukusebenza kakubi kobushushu obuphezulu).
I-Silicon: 1.12eV (i-bandgap engathanga ngqo, ifanelekile kwiisekethe ze-logic kodwa ayinakukhupha ukukhanya).
Ⅱ,Iingenelo zeSilicon:
Ngokwendalo yenza i-oxide esemgangathweni ophezulu (i-SiO₂), evumela ukwenziwa kwe-MOSFET.
Ixabiso liphantsi kwaye ininzi emhlabeni (~28% yokwakheka kwe-crustal).
Ⅲ,Imida:
Ukuhamba kwee-electron okuphantsi (yi-1500 cm²/(V·s) kuphela), okuthintela ukusebenza kwe-high-frequency.
Ukunyamezelana kwe-voltage/ubushushu obuphantsi (ubushushu obuphezulu bokusebenza. ~150°C).
Izicelo eziphambili
Ⅰ,Iisekethe eziDibeneyo (ii-IC):
IiCPU, ii-memory chips (umz., i-DRAM, i-NAND) zixhomekeke kwi-silicon ukuze kubekho uxinano olukhulu lokudibanisa.
Umzekelo: I-Intel's 4004 (1971), i-microprocessor yokuqala yorhwebo, yasebenzisa itekhnoloji ye-silicon ye-10μm.
Ⅱ,Izixhobo zamandla:
Ii-thyristors zokuqala kunye neeMOSFET ezine-voltage ephantsi (umz., izixhobo zombane zePC) zazisekelwe kwi-silicon.
Imingeni kunye nokungasasebenzi
I-Germanium yaphela ngenxa yokuvuza kunye nokungazinzi kobushushu. Nangona kunjalo, ukunqongophala kwe-silicon kwi-optoelectronics kunye nokusetyenziswa kwamandla aphezulu kwakhuthaza ukuphuhliswa kwee-semiconductors zesizukulwana esilandelayo.
IiSemiconductors zeSizukulwana sesiBini: iGallium Arsenide (GaAs) kunye neIndium Phosphide (InP)
Imvelaphi yoPhuhliso
Ngexesha leminyaka yoo-1970 ukuya kowe-1980, amacandelo asakhulayo afana nonxibelelwano oluphathwayo, iinethiwekhi zefayibha ye-optical, kunye netekhnoloji yesathelayithi yadala imfuno engxamisekileyo yezixhobo ze-optoelectronic ezisebenza rhoqo nezisebenzayo. Oku kwaqhuba ukuqhubela phambili kwe-bandgap semiconductors ezithe ngqo ezifana neGaAs kunye ne-InP.
Iipropati zezinto ezibonakalayo
Ukusebenza kweBandgap kunye ne-Optoelectronic:
IiGaAs: 1.42eV (i-bandgap ethe ngqo, ivumela ukukhutshwa kokukhanya—ilungele ii-laser/ii-LED).
I-InP: 1.34eV (ilungele ngcono usetyenziso lwe-long-wave length, umz., unxibelelwano lwe-fiber-optic lwe-1550nm).
Ukuhamba kwe-Electron:
I-GaAs ifikelela kwi-8500 cm²/(V·s), idlula kakhulu i-silicon (1500 cm²/(V·s)), nto leyo eyenza ukuba ibe yeyona ifanelekileyo kwi-GHz-range signal processing.
Iingxaki
lIi-substrates ezibhityileyo: Kunzima ukuzenza kune-silicon; ii-wafers ze-GaAs zibiza ngaphezulu nge-10×.
lAkukho oxide yendalo: Ngokungafaniyo ne-SiO₂ ye-silicon, i-GaAs/InP ayinazo ii-oxide ezizinzileyo, nto leyo ethintela ukwenziwa kwe-IC enoxinano oluphezulu.
Izicelo eziphambili
lIi-RF Front-Ends:
Ii-amplifier zamandla eziphathwayo (ii-PA), ii-transceivers zesathelayithi (umz., ii-transistors ze-HEMT ezisekelwe kwi-GaAs).
lIzixhobo ze-Optoelectronics:
Iidayidi zelaser (iiCD/iiDVD drives), ii-LED (ezibomvu/ezine-infrared), iimodyuli ze-fiber-optic (ii-InP lasers).
lIiseli zeSolar zeSithuba:
Iiseli zeGaAs zisebenza kakuhle nge-30% (xa kuthelekiswa ne-~20% ye-silicon), nto leyo ebalulekileyo kwiisathelayithi.
lIingxaki zobuchwepheshe
Iindleko eziphezulu zithintela iiGaAs/InP kwizicelo eziphezulu, nto leyo ebathintela ekususeni ulawulo lwesilicon kwiitships zelogic.
IiSemiconductors zeSizukulwana Sesithathu (iiSemiconductors zeBandgap ezibanzi): iSilicon Carbide (SiC) kunye neGallium Nitride (GaN)
Abaqhubi beTekhnoloji
Uguquko lwaMandla: Izithuthi zombane kunye nokuhlanganiswa kwegridi yamandla avuselelekayo kufuna izixhobo zamandla ezisebenzayo ngakumbi.
Iimfuno Eziphezulu Zokunxibelelana: Iinkqubo zonxibelelwano ze-5G kunye ne-radar zifuna amaza aphezulu kunye noxinano lwamandla.
Iindawo Ezinzima Kakhulu: Ukusetyenziswa kweemoto zeenqwelo-moya kunye neemoto zoshishino kufuna izixhobo ezikwaziyo ukumelana namaqondo obushushu angaphezulu kwama-200°C.
Iimpawu zezinto eziphathekayo
Iingenelo zeBandgap ebanzi:
lI-SiC: I-Bandgap ye-3.26eV, ukuqhekeka kwamandla ombane angama-10× afana nawe-silicon, ekwaziyo ukumelana nee-voltages ezingaphezulu kwe-10kV.
lI-GaN: I-Bandgap ye-3.4eV, ukuhamba kwe-electron kwe-2200 cm²/(V·s), igqwesa ekusebenzeni kwe-high-frequency.
Ulawulo lobushushu:
Ukuqhuba kobushushu beSiC kufikelela kwi-4.9 W/(cm·K), ngcono ngokuphindwe kathathu kune-silicon, nto leyo eyenza ukuba ilungele ukusetyenziswa kwamandla aphezulu.
Imingeni yezinto eziphathekayo
I-SiC: Ukukhula kancinci kwekristale enye kufuna amaqondo obushushu angaphezu kwama-2000°C, nto leyo ebangela iziphene ze-wafer kunye neendleko eziphezulu (i-wafer ye-SiC engama-intshi ayi-6 ibiza kakhulu ngama-20× kune-silicon).
I-GaN: Ayinaso isiseko sendalo, idla ngokufuna i-heteroepitaxy kwi-sapphire, i-SiC, okanye i-silicon substrates, nto leyo ekhokelela kwimiba yokungafani kwe-lattice.
Izicelo eziphambili
Izixhobo zombane:
Ii-EV inverters (umz., iTesla Model 3 isebenzisa iiSiC MOSFETs, nto leyo ephucula ukusebenza kakuhle nge-5–10%).
Izitishi/iiadaptha zokutshaja ngokukhawuleza (izixhobo zeGaN zivumela ukutshaja ngokukhawuleza kwe-100W+ ngelixa zinciphisa ubungakanani nge-50%).
Izixhobo zeRF:
Izikhulisi zamandla zesikhululo se-5G (ii-GaN-on-SiC PAs zixhasa amaza e-mmWave).
I-radar yomkhosi (iGaN inika amandla angama-5x ubukhulu beGaAs).
Izixhobo ze-Optoelectronics:
Ii-LED ze-UV (izinto ze-AlGaN ezisetyenziswa ekubulaleni iintsholongwane nasekufumaneni umgangatho wamanzi).
Imeko yoShishino kunye neMbono yeKamva
I-SiC ilawula imarike enamandla aphezulu, kwaye iimodyuli zezinga leemoto sele zivelisa ngobuninzi, nangona iindleko zisengumqobo.
I-GaN ikhula ngokukhawuleza kwii-elektroniki zabathengi (ukutshaja ngokukhawuleza) kunye nezicelo ze-RF, itshintshela kwii-wafers ze-intshi ezi-8.
Izinto ezivelayo ezifana ne-gallium oxide (Ga₂O₃, i-bandgap 4.8eV) kunye nedayimani (5.5eV) zinokwenza "isizukulwana sesine" see-semiconductors, zityhala imida yevolthi ngaphaya kwe-20kV.
Ukuhlalisana kunye nokuSebenza ngokubambisana kwezizukulwana zeSemiconductor
Ukuhambelana, Hayi Ukutshintsha:
I-silicon isaqhubeka nokuba yinxalenye ephambili kwiitships ze-logic kunye ne-consumer electronics (95% yemarike ye-semiconductor yehlabathi).
I-GaAs kunye ne-InP zigxile kwii-niches ezisebenza rhoqo kakhulu kunye ne-optoelectronic.
I-SiC/GaN ayinakuthathelwa indawo kumandla nakwimisebenzi yemizi-mveliso.
Imizekelo yoHlanganiso lweTekhnoloji:
I-GaN-on-Si: Idibanisa i-GaN kunye ne-silicon substrates ezingabizi kakhulu ukuze itshaje ngokukhawuleza kunye nokusetyenziswa kwe-RF.
Iimodyuli ze-SiC-IGBT hybrid: Ukuphucula ukusebenza kakuhle kokuguqulwa kwegridi.
Iindlela Ezihamba Ngayo Kwixesha Elizayo:
Ukudibanisa okwahlukeneyo: Ukudibanisa izixhobo (umz., iSi + GaN) kwitshiphu enye ukulinganisela ukusebenza kunye neendleko.
Izixhobo ze-bandgap ezibanzi kakhulu (umz., iGa₂O₃, idayimani) zinokwenza ukuba kubekho usetyenziso lwe-voltage ephezulu kakhulu (>20kV) kunye ne-quantum computing.
Imveliso enxulumeneyo
I-GaAs laser epitaxial wafer 4 intshi 6 intshi
I-12 intshi ye-SIC substrate i-silicon carbide prime grade diameter 300mm enkulu ubukhulu 4H-N Ifanelekile ukusasaza ubushushu besixhobo esinamandla aphezulu
Ixesha leposi: Meyi-07-2025