Isizukulwana sokuqala Isizukulwana sesibini Izixhobo ze-semiconductor zesizukulwana sesithathu

Izinto zeSemiconductor ziye zavela kwizizukulwana ezithathu eziguqukayo:

I-1st Gen (Si/Ge) yabeka isiseko sombane wale mihla,

I-2nd Gen (i-GaAs / InP) yaphule imiqobo ye-optoelectronic kunye ne-high-frequency ukunika amandla ukuguqulwa kolwazi,

I-3rd Gen (i-SiC / GaN) ngoku ijongana namandla kunye nemingeni egqithisileyo-yendalo, eyenza ukungathathi hlangothi kwekhabhoni kunye nexesha le-6G.

Oku kuqhubela phambili kutyhila utshintsho lweparadigm ukusuka kwizinto ezininzi ukuya kubungcali kwisayensi yezinto.

1. I-Semiconductors yesizukulwana sokuqala: I-Silicon (Si) kunye ne-Germanium (Ge)

Imvelaphi yezembali

Ngo-1947, ii-Bell Labs zenze i-germanium transistor, ephawula ukuqala kwexesha le-semiconductor. Ngeminyaka yee-1950, i-silicon yatshintsha ngokuthe ngcembe i-germanium njengesiseko seesekethe ezidibeneyo (ICs) ngenxa yomaleko wayo ozinzileyo we-oxide (SiO₂) kunye nobutyebi bendalo obuninzi.

Iipropati zeMathiriyeli

ⅠIbhendi:

I-Germanium: 0.67eV (i-bandgap emxinwa, ithanda ukuvuza okwangoku, ukusebenza kakubi kobushushu obuphezulu).

I-Silicon: I-1.12eV (i-bandgap engathanga ngqo, ifanelekile kwiisekethe ze-logic kodwa ayikwazi ukukhutshwa kokukhanya).

Ⅱ,Izinto eziluncedo zeSilicon:

Ngokwendalo yenza i-oxide ekumgangatho ophezulu (SiO₂), eyenza ukwenziwa kwe-MOSFET.

Iindleko eziphantsi kunye nomhlaba-uninzi (~ 28% ye-crustal composition).

Ⅲ,Imida:

Ukushukuma kwe-electron ephantsi (kuphela 1500 cm²/(V·s)), inqanda ukusebenza kwefrikhwensi ephezulu.

Ukunyamezela kwamandla ombane/ubushushu (ubushushu bokusebenza obukhulu. ~150°C).

Usetyenziso oluphambili

ⅠIiSekethe eziDityanisiweyo (ICs):

Ii-CPU, iitshiphusi zememori (umzekelo, i-DRAM, i-NAND) zixhomekeke kwi-silicon yoxinaniso oluphezulu lokudibanisa.

Umzekelo: I-Intel's 4004 (1971), i-microprocessor yokuqala yorhwebo, yasebenzisa iteknoloji ye-silicon ye-10μm.

Ⅱ,Izixhobo zamandla:

I-thyristors yangaphambili kunye ne-low-voltage MOSFETs (umzekelo, izixhobo zombane zePC) zazisekwe kwisilicon.

Imiceli mngeni kunye nokungabi namsebenzi

I-Germanium yapheliswa ngenxa yokuvuza kunye nokungazinzi kwe-thermal. Nangona kunjalo, imida ye-silicon kwi-optoelectronics kunye nokusetyenziswa kwamandla aphezulu kukhuthaze uphuhliso lwe-semiconductors elandelayo.

I-2Semiconductors yesiXeko seSibini: i-Gallium Arsenide (GaAs) kunye ne-Indium Phosphide (InP)

Imvelaphi yoPhuhliso

Ngexesha le-1970s-1980s, amasimi asakhulayo afana nonxibelelwano oluselfowuni, uthungelwano lwefiber optical, kunye netekhnoloji yesathelayithi yenze imfuno ecinezelayo yezinto ezisebenza ngokuphindaphindiweyo kunye ne-optoelectronic esebenzayo. Oku kuqhube ukuqhubela phambili kwee-semiconductors ze-bandgap ezithe ngqo njenge-GaAs kunye ne-InP.

Iipropati zeMathiriyeli

I-Bandgap kunye ne-Optoelectronic Performance:

I-GaAs: I-1.42eV (i-bandgap ngqo, yenza ukukhutshwa kokukhanya-ilungele i-lasers / LEDs).

I-InP: I-1.34eV (ifaneleka ngakumbi kwizicelo ze-long-wavelength, umz, i-1550nm i-fiber-optic communications).

Ukuhamba kwe-Elektroni:

I-GaAs iphumeza i-8500 cm²/(V·s), iyodlula lee isilicon (1500 cm²/(V·s)), iyenze ibe yeyona ilungileyo kwi-GHz-uluhlu lokusetyenzwa komqondiso.

Iingxaki

lI-Brittle substrates: Kunzima ukwenza kune-silicon; Ii-wafers ze-GaAs zibiza i-10 × ngaphezulu.

lAkukho oxide yendalo: Ngokungafaniyo ne-silicon yeSiO₂, i-GaAs/InP ayinazo ii-oxide ezizinzile, zithintela ukwenziwa kwe-IC ephezulu.

Usetyenziso oluphambili

lRF Front-Ends:

I-Mobile amplifiers (PAs), ii-satellite transceivers (umz., i-GaAs-based HEMT transistors).

lI-Optoelectronics:

I-Laser diodes (i-CD / DVD drives), ii-LED (ezibomvu / ze-infrared), iimodyuli ze-fiber-optic (i-InP lasers).

lIiseli zeSolar zeSithuba:

Iiseli ze-GaAs zifezekisa ukusebenza kakuhle kwe-30% (vs. ~ 20% ye-silicon), ibalulekile kwiisathelayithi. 

lIibhotile zeTekhnoloji

Iindleko eziphezulu zivala i-GaAs/InP kwi-niche ephezulu yezicelo, zibathintele ekususeni ubukhosi be-silicon kwiichips ezinengqondo.

I-Semiconductors yesiZukulwana sesiThathu (i-Wide-Bandgap Semiconductors): I-Silicon Carbide (SiC) kunye ne-Gallium Nitride (GaN)

Abaqhubi beTekhnoloji

Uguqulo lwamandla: Izithuthi zombane kunye nokudityaniswa kwegridi yamandla ahlaziyekayo kufuna izixhobo ezinamandla ngakumbi.

Iimfuno eziphezulu ze-Frequency: Unxibelelwano lwe-5G kunye neenkqubo ze-radar zifuna i-frequencies ephezulu kunye nokuxinana kwamandla.

Imeko-bume eNgqongileyo: I-aerospace kunye nosetyenziso lweemoto zemizi-mveliso zifuna imathiriyeli ekwaziyo ukumelana namaqondo obushushu angaphezu kwama-200°C.

Iimpawu zeMathiriyeli

Iinzuzo zeBandgap ebanzi:

lI-SiC: I-Bandgap ye-3.26eV, ukuchithwa kwamandla ombane kwi-10 × ye-silicon, ekwazi ukumelana nombane ongaphezu kwe-10kV.

lI-GaN: I-Bandgap ye-3.4eV, ukuhamba kwe-electron ye-2200 cm²/(V·s), egqwesileyo ekusebenzeni kwe-frequency ephezulu.

Ulawulo lobushushu:

I-SiC's conductivity ye-thermal ifikelela kwi-4.9 W / (cm·K), ngokuphindwe kathathu kune-silicon, okwenza kube yinto efanelekileyo kwizicelo zamandla aphezulu.

Imingeni yezinto eziphathekayo

I-SiC: Ukukhula okucothayo kwe-crystal eyodwa kufuna amaqondo okushisa angaphezu kwe-2000 ° C, okubangelwa iziphene ze-wafer kunye neendleko eziphezulu (i-6-intshi ye-SiC wafer i-20 × ibiza ngaphezu kwe-silicon).

I-GaN: Ayinayo i-substrate yendalo, ehlala ifuna i-heteroepitaxy kwi-sapphire, i-SiC, okanye i-silicon substrates, ekhokelela kwimiba ye-lattice engafanelekanga.

Usetyenziso oluphambili

Umbane woMbane:

I-EV inverters (umzekelo, i-Tesla Model 3 isebenzisa i-SiC MOSFETs, iphucula ukusebenza kakuhle nge-5-10%).

Izitishi ezikhawulezayo / ii-adapters (izixhobo ze-GaN zenza i-100W + ukutshaja ngokukhawuleza ngelixa unciphisa ubungakanani ngama-50%).

Izixhobo zeRF:

I-5G isiseko se-amplifiers zamandla (i-GaN-on-SiC PAs ixhasa i-mmWave frequencies).

I-radar yomkhosi (i-GaN inikezela nge-5 × ubuninzi bamandla e-GaAs).

I-Optoelectronics:

Ii-LED ze-UV (izinto ze-AlGaN ezisetyenziselwa ukuvala inzala kunye nokukhangela umgangatho wamanzi).

Ubume boShishino kunye neNkalo yekamva

I-SiC ilawula i-market-power market, kunye neemodyuli ze-automotive-grade esele zisemveliso yobuninzi, nangona iindleko zihlala zingumqobo.

I-GaN ikhula ngokukhawuleza kwii-electronics zabathengi (ukutshaja okukhawulezayo) kunye nosetyenziso lweRF, itshintshela kwii-intshi ezisi-8 zeewafers.

Izinto ezivelayo ezifana ne-gallium oxide (i-Ga₂O₃, i-bandgap 4.8eV) kunye nedayimane (5.5eV) inokwenza "isizukulwana sesine" se-semiconductors, ukutyhala imida yamandla ombane ngaphaya kwe-20kV.

Ukuhlalisana kunye ne-Synergy ye-Semiconductor Generations

Ukuzalisekisa, hayi uTshintsho:

I-Silicon ihleli ibalasele kwi-logic chips kunye ne-elektroniki yabathengi (i-95% yemarike ye-semiconductor yehlabathi).

I-GaAs kunye ne-InP zisebenza ngokukhethekileyo kwi-high-frequency kunye ne-optoelectronic niches.

I-SiC/GaN ayinakuphinda isetyenziswe kumandla nakwimizi-mveliso.

Imizekelo yoManyano lweTekhnoloji:

I-GaN-on-Si: Idibanisa i-GaN kunye ne-silicon substrates yexabiso eliphantsi lokutshaja ngokukhawuleza kunye nezicelo ze-RF.

Iimodyuli ezixubileyo ze-SiC-IGBT: Ukuphucula ukusebenza kakuhle kokuguqulwa kwegridi.

Iintsingiselo zexesha elizayo:

Ukuhlanganiswa okungafaniyo: Ukudibanisa izinto (umzekelo, iSi + GaN) kwi-chip enye ukulinganisa ukusebenza kunye neendleko.

Iimathiriyeli ze-bandgap ebanzi kakhulu (umzekelo, i-Ga₂O₃, idayimani) inokwenza i-ultra-high-voltage (>20kV) kunye ne-quantum computing applications.

Imveliso ehambelanayo

GaAs laser epitaxial wafer 4 intshi 6 intshi

I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanele ukuchithwa kobushushu kwisixhobo esinamandla aphezulu