Kutheni iitships zanamhlanje zishushu

Njengoko ii-transistors ze-nanoscale zitshintsha ngesantya se-gigahertz, ii-elektroni zidlula kwiisekethe kwaye zilahlekelwa ngamandla njengobushushu—ubushushu obufanayo obuvayo xa ilaptop okanye ifowuni ifudumala ngendlela engakhululekanga. Ukupakisha ii-transistors ezingaphezulu kwi-chip kushiya indawo encinci yokususa olo bushushu. Endaweni yokusasazeka ngokulinganayo nge-silicon, ubushushu buqokelelana kwiindawo ezishushu kakhulu ezinokushisa kakhulu kuneendawo ezingqongileyo. Ukuthintela umonakalo kunye nokulahleka kokusebenza, iinkqubo zitshintsha ii-CPU kunye nee-GPU xa amaqondo obushushu enyuka.

Ububanzi bomngeni wobushushu

Oko kwaqala njengomdyarho wokunciphisa i-aturize kuye kwaba yimfazwe nobushushu kuzo zonke izixhobo ze-elektroniki. Kwikhompyutha, ukusebenza kuqhubeka nokunyusa uxinano lwamandla (iiseva ngazinye zinokutsala amashumi ee-kilowatts). Kunxibelelwano, zombini iisekethe zedijithali kunye neze-analog zifuna amandla aphezulu e-transistor ukuze kubekho imiqondiso enamandla kunye nedatha ekhawulezayo. Kwizixhobo ze-elektroniki zamandla, ukusebenza ngcono kuya kuncitshiswa ngakumbi yimida yobushushu.

Icebo elahlukileyo: ukusasaza ubushushu ngaphakathi kwitshiphusi

Endaweni yokuvumela ubushushu buqine, ingcamango ethembisayo kukubanciphisangaphakathi kwetshiphu ngokwayo—njengokugalela indebe yamanzi abilayo edamini lokuqubha. Ukuba ubushushu busasazwa kanye apho buveliswa khona, izixhobo ezishushu zihlala zipholile kwaye ii-cooler eziqhelekileyo (ii-heat sinks, iifeni, ii-liquid loops) zisebenza kakuhle ngakumbi. Oku kufunaizinto ezithwala ubushushu obuphezulu, ezikhusela umbanei-nanometers ezidityaniswe kuphela ezivela kwii-transistors ezisebenzayo ngaphandle kokuphazamisa iimpawu zazo ezibuthathaka. Umviwa ongalindelekanga uhambelana nalo mthetho:idayimani.

Kutheni idayimani?

Idayimani iphakathi kwezona ziqhuba ubushushu zibalaseleyo ezaziwayo—ingaphezulu kaninzi kuneyethusi—kwaye ikwayi-insulator yombane. Ingxaki kukuba idibanisa: iindlela zokukhula zesiqhelo zifuna amaqondo obushushu amalunga okanye angaphezulu kwe-900–1000 °C, nto leyo eyonakalisa iisekethe eziphambili. Inkqubela yakutshanje ibonisa ukuba i-thinidayimani yepolycrystallineiifilimu (ezincinci kuphela ii-micrometer ubukhulu) zingakhuliswa kwiamaqondo obushushu aphantsi kakhuluifanelekile kwizixhobo ezigqityiweyo.

Iicooler zanamhlanje kunye nemida yazo

Ukupholisa okuqhelekileyo kugxile kwiindawo ezingcono zokupholisa ubushushu, iifeni, kunye nezixhobo zonxibelelwano. Abaphandi bakwahlola ukupholisa ulwelo oluncinci, izinto zokutshintsha isigaba, kwanokuntywilisela iiseva kwizinto ezifudumeza ubushushu, ezigquma ubushushu ngombane. La ngamanyathelo abalulekileyo, kodwa anokuba makhulu, abize kakhulu, okanye angangqinelani kakuhle nezinto ezintsha.Ifakwe i-3Duyilo lweetshiphusi, apho iileya ezininzi zesilicon ziziphatha njenge "skyscraper." Kwii-stacks ezinjalo, ileya nganye kufuneka ikhuphe ubushushu; kungenjalo iindawo ezishushu zibambeke ngaphakathi.

Indlela yokukhulisa idayimani elungele izixhobo

Idayimani yekristale enye inomoya ogqithisileyo wokushisa (≈2200–2400 W m⁻¹ K⁻¹, malunga nezihlandlo ezithandathu kunezobhedu). Iifilimu zepolycrystalline ezilula ukuzenza zinokusondela kwezi xabiso xa zinobukhulu obaneleyo—kwaye zisengcono kunezobhedu nangona zincinci. Ukufakwa komphunga wekhemikhali wendabuko kusabela kwi-methane kunye ne-hydrogen kubushushu obuphezulu, kwenze ii-nanocolumns zedayimani ezithe nkqo ezithi kamva zihlangane zibe yifilimu; ngelo xesha umaleko utyebile, uxinezelekile, kwaye uthambekele ekuqhekekeni.
Ukukhula kobushushu obuphantsi kufuna iresiphi eyahlukileyo. Ukunciphisa nje ubushushu kuvelisa umsi oqhubayo endaweni yokukhusela idayimani.ioksijiniiqhubeka nokukrazula ikhabhoni engeyiyo idayimani, ivumelaidayimani yepolycrystalline enkulu enezikhozo ezinkulu kwi ~400 °C, ubushushu obuhambelana neesekethe ezidityanisiweyo eziphambili. Okubaluleke ngokufanayo, le nkqubo ayinakugquma kuphela iindawo ezithe tye kodwaiindonga ezisecaleni, nto leyo ibalulekileyo kwizixhobo ze-3D ngokwemvelo.

Ukumelana nomda wobushushu (TBR): i-bottleneck ye-phonon

Ubushushu kwizinto eziqinileyo buthwalwaiifowuni(ukungcangcazela kwelatisi okulinganiselweyo). Kwiindawo zokujonga izinto, ii-phonon zinokubonakalisa kwaye ziqokelelene, zidaleukumelana nomda wobushushu (TBR)okuthintela ukuhamba kobushushu. Ubunjineli be-Interface bufuna ukunciphisa i-TBR, kodwa ukhetho lunqunyelwe kukuhambelana kwe-semiconductor. Kwi-interfaces ezithile, i-intermixing inokwenza i-thini-silicon carbide (i-SiC)umaleko ohambelana ngcono nee-phonon spectra kumacala omabini, usebenza njenge "bhulorho" kwaye unciphisa i-TBR - ngaloo ndlela uphucula ukudluliselwa kobushushu ukusuka kwizixhobo ukuya kwidayimani.

Ibhedi yovavanyo: ii-GaN HEMTs (ii-transistors zerediyo-frequency)

Iitransistors ze-high-electron-mobility (HEMTs) ezisekelwe kumbane wolawulo lwe-gallium nitride kwigesi ye-2D electron kwaye zixatyiswa ngokusebenza ngamandla aphezulu (kuquka i-X-band ≈8–12 GHz kunye ne-W-band ≈75–110 GHz). Ngenxa yokuba ubushushu buveliswa kufutshane nomphezulu, ziyiprobe ebalaseleyo yayo nayiphi na imaleko yokusasazeka kobushushu kwindawo. Xa idayimani encinci igubungela isixhobo—kuquka iindonga ezisecaleni—amaqondo obushushu etshaneli abonwe ehla nge~70 °C, kunye nophuculo olukhulu kwigumbi lobushushu elinamandla aphezulu.

Idayimani kwii-CMOS kunye nee-3D stacks

Kwikhompyutha ephucukileyo,Ukufakwa kwe-3Dkwandisa uxinano kunye nokusebenza kokudibanisa kodwa kudala imiqobo yangaphakathi yobushushu apho ii-cooler zemveli, zangaphandle zingasebenzi kakuhle. Ukudibanisa idayimani ne-silicon kunokuphinda kuvelise inzuzoI-SiC interlayer, evelisa ujongano lobushushu olusemgangathweni ophezulu.
Olunye uyilo olucetywayo luisikafu sobushushu: amaphepha edayimani abhityileyo njenge-nanometer afakwe ngaphezulu kwee-transistors ngaphakathi kwe-dielectric, aqhagamshelwe yiii-vis ezithe nkqo zobushushu (“ii-heat pillars”)zenziwe ngobhedu okanye ngedayimani eyongezelelweyo. Ezi ntsika zidlulisa ubushushu ukusuka kumaleko ukuya kwenye de bufikelele kwi-cooler yangaphandle. Iimodeli ezinemisebenzi ebonakalayo zibonisa ukuba ezo zakhiwo zinokunciphisa amaqondo obushushu aphezulu ngoukuya kuthi ga kumlinganiselo omkhulukwiingqokelela zobungqina bengcamango.

Okusenzima

Imingeni ephambili ibandakanya ukwenza umphezulu wedayimaningokuthe tyaba ngokweathomukuze kudityaniswe ngokungenamthungo kunye nee-overlaying interconnects kunye ne-dielectrics, kunye neenkqubo zokucoca ukuze iifilimu ezincinci zigcine ukuhanjiswa kobushushu okugqwesileyo ngaphandle kokucinezela i-circuitry engaphantsi.

Imbonakalo

Ukuba ezi ndlela ziyaqhubeka nokuvuthwa,ukusasazeka kobushushu bedayimani kwi-chipinokunciphisa kakhulu imida yobushushu kwi-CMOS, RF, kunye ne-electronics yamandla—okuvumela ukusebenza okuphezulu, ukuthembeka okukhulu, kunye nokuhlanganiswa kwe-3D okuxineneyo ngaphandle kwesohlwayo esiqhelekileyo sobushushu.