I-silicon carbide substrate ihlulwe ibe yi-semi-insulating type kunye ne-conductive type. Okwangoku, ukucaciswa okuqhelekileyo kweemveliso ze-silicon carbide substrate ze-semi-insulated yi-intshi ezi-4. Kwimakethi ye-silicon carbide eqhubayo, inkcazo yemveliso engundoqo yangoku yi-intshi ezi-6.
Ngenxa yezicelo ezisezantsi kwintsimi yeRF, i-semi-insulated SiC substrates kunye nemathiriyeli ye-epitaxial ixhomekeke kulawulo lokuthumela ngaphandle liSebe lezoRhwebo lase-US. I-Semi-insulated SiC njenge-substrate yinto ekhethwayo ye-GaN heteroepitaxy kwaye inethemba elibalulekileyo lokusetyenziswa kwintsimi ye-microwave. Xa kuthelekiswa ne-crystal mismatch yesafire 14% kunye ne-Si 16.9%, i-crystal mismatch ye-SiC kunye ne-GaN materials yi-3.4 kuphela. Idityaniswe ne-ultra-high thermal conductivity ye-SiC, i-LED esebenza kakuhle kakhulu kunye ne-GaN high frequency kunye nezixhobo eziphezulu ze-microwave ezilungiselelwe yiyo zineenzuzo ezinkulu kwi-radar, izixhobo eziphezulu ze-microwave kunye neenkqubo zonxibelelwano ze-5G.
Uphando kunye nophuhliso lwe-semi-insulated ye-SiC substrate ibisoloko igxininise kuphando kunye nophuhliso lwe-SiC enye ye-crystal substrate. Kukho ubunzima obubini obuphambili ekukhuliseni imathiriyeli ye-SiC ene-semi-insulated:
1) Ukunciphisa ukungcola komnikezeli we-N owenziwe nge-graphite crucible, i-thermal insulation adsorption kunye ne-doping kwi-powder;
2) Ngelixa uqinisekisa umgangatho kunye neempawu zombane zekristale, iziko lenqanaba elinzulu liyaziswa ukubuyisela ubumdaka obushiyekileyo bomgangatho ongekho nzulu ngomsebenzi wombane.
Okwangoku, abavelisi abane-semi-insulated ye-SiC yemveliso ubukhulu becala yi-SICC Co, iSemisic Crystal Co, iTanke Blue Co, iHebei Synlight Crystal Co., Ltd.
I-crystal ye-SiC eqhubayo ifezekiswa ngokufaka i-nitrogen emoyeni okhulayo. I-conductive silicon carbide substrate isetyenziswa ikakhulu ekwenzeni izixhobo zamandla, izixhobo zamandla e-silicon carbide ezinevoltheji ephezulu, yangoku, ubushushu obuphezulu, i-frequency ephezulu, ilahleko ephantsi kunye nezinye iingenelo ezizodwa, ziya kuphucula kakhulu ukusetyenziswa okukhoyo kwezixhobo zamandla ezisekelwe kwi-silicon. ukusebenza kakuhle kokuguqulwa, kunempembelelo ebalulekileyo kunye nekude kwintsimi yokuguqulwa kwamandla okusebenzayo. Iindawo eziphambili zesicelo zizithuthi zombane / iimfumba zokutshaja, amandla amatsha e-photovoltaic, ukuhamba ngololiwe, igridi ehlakaniphile njalo njalo. Ngenxa yokuba i-downstream yeemveliso ze-conductive ziyizixhobo zamandla kwizithuthi zombane, i-photovoltaic kunye nezinye iindawo, ithemba lesicelo libanzi, kwaye abavelisi baninzi.
I-silicon carbide crystal type: Isakhiwo esiqhelekileyo se-4H ye-crystalline silicon carbide engcono kakhulu inokwahlulwa ibe ngamacandelo amabini, enye yi-cubic silicon carbide crystal uhlobo lwesakhiwo se-sphalerite, eyaziwa ngokuba yi-3C-SiC okanye i-β-SiC, kwaye enye i-hexagonal. okanye isakhiwo sedayimane sesakhiwo sexesha elikhulu, eliqhelekileyo le-6H-SiC, i-4H-sic, i-15R-SiC, njl., ngokudibeneyo eyaziwa ngokuba yi-α-SiC. I-3C-SiC inenzuzo yokumelana okuphezulu kwizixhobo zokuvelisa. Nangona kunjalo, ukungafani okuphezulu phakathi kwe-Si kunye ne-SiC ye-lattice constants kunye ne-coefficients yokwandisa i-thermal kunokukhokelela kwinani elikhulu leziphene kwi-3C-SiC epitaxial layer. I-4H-SiC inamandla amakhulu ekuveliseni i-MOSFETs, kuba ukukhula kwayo kwekristale kunye neenkqubo zokukhula kwe-epitaxial layer zigqwesileyo, kwaye ngokuhambelana nokuhamba kwe-electron, i-4H-SiC iphezulu kune-3C-SiC kunye ne-6H-SiC, ibonelela ngeempawu ezingcono ze-microwave ze-4H. -SiC MOSFETs.
Ukuba kukho ulwaphulo-mthetho, cima uqhagamshelwano
Ixesha lokuposa: Jul-16-2024