I-substrate ye-silicon carbide yahlulwe ngohlobo lwe-semi-insulation kunye nohlobo lwe-conductive. Okwangoku, iinkcukacha eziphambili zeemveliso ze-silicon carbide substrate ezifakwe i-semi-insulation zii-intshi ezi-4. Kwimarike ye-silicon carbide eqhubayo, iinkcukacha zangoku zemveliso ye-substrate zi-intshi ezi-6.
Ngenxa yezicelo ezisezantsi kwicandelo le-RF, ii-substrates ze-SiC ezifakwe i-semi-insulated kunye nezixhobo ze-epitaxial zilawulwa yiSebe lezoRhwebo lase-US. I-Semi-insulated SiC njenge-substrate yeyona nto ikhethwayo kwi-GaN heteroepitaxy kwaye inamathuba abalulekileyo okusetyenziswa kwicandelo le-microwave. Xa kuthelekiswa nokungafani kwekristale kwe-sapphire 14% kunye ne-Si 16.9%, ukungafani kwekristale kwezinto ze-SiC kunye ne-GaN yi-3.4% kuphela. Xa zidityaniswe nokuqhuba ubushushu okuphezulu kwe-SiC, izixhobo ze-microwave ezisebenzayo kakhulu ze-LED kunye ne-GaN ezisetyenziswa rhoqo kunye nezixhobo ze-microwave ezinamandla aphezulu ezilungiselelwe yiyo zinezibonelelo ezinkulu kwi-radar, izixhobo ze-microwave ezinamandla aphezulu kunye neenkqubo zonxibelelwano ze-5G.
Uphando nophuhliso lwe-substrate ye-SiC efakwe i-semi-insulation ibisoloko iyeyona nto iphambili kuphando nophuhliso lwe-substrate yekristale enye ye-SiC. Kukho ubunzima obubini obuphambili ekukhuliseni izinto ze-SiC ezifakwe i-semi-insulation:
1) Nciphisa ukungcola kwe-N okubangelwa yi-graphite crucible, i-thermal insulation adsorption kunye ne-doping kwi-powder;
2) Ngelixa kuqinisekiswa umgangatho kunye neempawu zombane zekristale, iziko elisezantsi liyaziswa ukuze lihlawulele ukungcola okuseleyo kwinqanaba elingaphantsi ngomsebenzi wombane.
Okwangoku, abavelisi abanemveliso yeSiC engagqunywanga kakhulu yi-SICC Co，Semisic Crystal Co，Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Ikristale yeSiC eqhubayo ifumaneka ngokufaka initrogen emoyeni okhulayo. I-substrate ye-silicon carbide eqhubayo isetyenziswa kakhulu ekwenzeni izixhobo zamandla, izixhobo zamandla ze-silicon carbide ezine-voltage ephezulu, umbane ophezulu, ubushushu obuphezulu, i-frequency ephezulu, ilahleko ephantsi kunye nezinye izibonelelo ezikhethekileyo, iya kuphucula kakhulu ukusetyenziswa okukhoyo kwezixhobo zamandla ezisekelwe kwi-silicon, inempembelelo ebalulekileyo nefikelela kude kwicandelo lokuguqulwa kwamandla okusebenzayo. Iindawo eziphambili zokusetyenziswa zizithuthi zombane/iipile zokutshaja, amandla amatsha e-photovoltaic, uthutho lukaloliwe, igridi ekrelekrele njalo njalo. Ngenxa yokuba imveliso esezantsi ye-conductive ikakhulu zizixhobo zamandla kwizithuthi zombane, i-photovoltaic nakwamanye amasimi, amathuba okusetyenziswa abanzi, kwaye abavelisi baninzi ngakumbi.
Uhlobo lwekristale yeSilicon carbide: Ulwakhiwo oluqhelekileyo lwekristale yeSilicon carbide ye-4H ebalaseleyo lunokwahlulwa lube ziindidi ezimbini, olunye luhlobo lwekristale yeSilicon carbide ye-cubic silicon yesakhiwo se-sphalerite, esaziwa ngokuba yi-3C-SiC okanye i-β-SiC, kwaye olunye luhlobo lwe-hexagonal okanye idayimani yesakhiwo sexesha elikhulu, esiqhelekileyo kwi-6H-SiC, 4H-sic, 15R-SiC, njl., esaziwa ngokuba yi-α-SiC. I-3C-SiC inenzuzo yokumelana okuphezulu kwizixhobo zokwenza. Nangona kunjalo, ukungafani okuphezulu phakathi kwe-Si kunye ne-SiC lattice constants kunye ne-thermal expansion coefficients kunokukhokelela kwinani elikhulu leziphene kwi-3C-SiC epitaxial layer. I-4H-SiC inamandla amakhulu ekuveliseni ii-MOSFET, kuba iinkqubo zayo zokukhula kwekristale kunye nokukhula kwe-epitaxial layer zibalasele ngakumbi, kwaye ngokwee-electron mobility, i-4H-SiC iphezulu kune-3C-SiC kunye ne-6H-SiC, inika iimpawu ze-microwave ezingcono kwi-4H-SiC MOSFETs.
Ukuba kukho ukwaphulwa komthetho, qhagamshelana nathi ucime
Ixesha leposi: Julayi-16-2024