Iiceramics zesilicon carbide (SiC) ezicocekileyo kakhulu ziye zavela njengezixhobo ezifanelekileyo kwizinto ezibalulekileyo kwimizi-mveliso ye-semiconductor, i-aerospace, kunye neekhemikhali ngenxa yokuqhuba kwazo okugqwesileyo kobushushu, uzinzo lweekhemikhali, kunye namandla oomatshini. Ngenxa yokwanda kweemfuno zezixhobo zeceramic ezisebenza kakuhle nezingcolisekileyo, uphuhliso lwetekhnoloji yokulungiselela esebenza kakuhle neyonganyelweyo yeeceramics zeSiC ezicocekileyo kakhulu luye lwaba yinto ephambili kuphando lwehlabathi. Eli phepha liphonononga ngokucwangcisiweyo iindlela eziphambili zokulungiselela iiceramics zeSiC ezicocekileyo kakhulu, kubandakanya ukutshiza kwakhona, ukutshiza okungenaxinzelelo (PS), ukucinezela okushushu (HP), ukutshiza i-spark plasma (SPS), kunye nokuveliswa kwezinto ezongezelelweyo (AM), kugxininiswa ekuxoxeni ngeendlela zokutshiza, iiparameter eziphambili, iimpawu zezinto, kunye nemingeni ekhoyo yenkqubo nganye.
Ukusetyenziswa kweeseramikhi zeSiC kwimimandla yomkhosi kunye nobunjineli
Okwangoku, izinto ze-ceramic ze-SiC ezicocekileyo kakhulu zisetyenziswa kakhulu kwizixhobo zokwenza i-silicon wafer, zithatha inxaxheba kwiinkqubo eziphambili ezifana ne-oxidation, i-lithography, i-etching, kunye ne-ion implantation. Ngokuhambela phambili kwetekhnoloji ye-wafer, ukwanda kobukhulu be-wafer kube ngumkhwa obalulekileyo. Ubungakanani be-wafer obuqhelekileyo bangoku yi-300 mm, kufezekisa ulungelelwaniso oluhle phakathi kweendleko kunye namandla emveliso. Nangona kunjalo, ngokuqhutywa nguMthetho kaMoore, ukuveliswa ngobuninzi bee-wafers ze-450 mm sele kukwi-ajenda. Ii-wafers ezinkulu zihlala zifuna amandla aphezulu olwakhiwo ukuze zimelane nokugoba kunye nokuguquguquka, nto leyo eqhubela phambili imfuno ekhulayo yezinto ze-ceramic ze-SiC ezinkulu, ezinamandla aphezulu, nezicocekileyo kakhulu. Kwiminyaka yakutshanje, ukwenziwa kwezinto ezongezelelweyo (ukuprinta kwe-3D), njengetekhnoloji yokulinganisa ngokukhawuleza engadingi zimolds, kubonakalise amandla amakhulu ekwenziweni kwezinto ze-ceramic ze-SiC ezakhiwe ngokuntsonkothileyo ngenxa yokwakhiwa kwazo kumgangatho ngamnye kunye nobuchule bokuyila obuguquguqukayo, obutsala ingqalelo ebanzi.
Eli phepha liza kuhlalutya ngokucwangcisiweyo iindlela ezintlanu zokulungiselela iiseramikhi zeSiC ezicocekileyo kakhulu—ukunyibilikisa ikristale kwakhona, ukunyibilikisa ngaphandle koxinzelelo, ukucinezela ngobushushu, ukunyibilikisa iplasma, kunye nokuveliswa kwezinto ezongeziweyo—ligxile kwiinkqubo zazo zokunyibilikisa, amaqhinga okuphucula inkqubo, iimpawu zokusebenza kwezinto, kunye namathuba okusetyenziswa kwemizi-mveliso.
Iimfuno zezinto eziluhlaza ze-silicon carbide ezicocekileyo kakhulu
I. Ukuphinda kusetyenziswe i-Sintering
I-recrystallized silicon carbide (RSiC) sisixhobo se-SiC esicocekileyo kakhulu esilungiselelwe ngaphandle kokusila kubushushu obuphezulu obuyi-2100–2500°C. Ukusukela oko uFredriksson wafumanisa okokuqala into yokusila kwakhona ngasekupheleni kwenkulungwane ye-19, i-RSiC ifumene ingqalelo enkulu ngenxa yemida yayo ecocekileyo yeenkozo kunye nokungabikho kwezigaba zeglasi kunye nokungcola. Kubushushu obuphezulu, i-SiC ibonisa uxinzelelo oluphezulu lomphunga, kwaye indlela yayo yokusila ngokuyintloko ibandakanya inkqubo yokufuma kunye nokufuma: iinkozo ezincinci ziyaphuma kwaye ziphinde zifakwe kwiindawo zeenkozo ezinkulu, zikhuthaza ukukhula kwentamo kunye nokubopha ngokuthe ngqo phakathi kweenkozo, ngaloo ndlela zonyusa amandla ezinto.
Ngo-1990, uKriegesmann walungisa i-RSiC enoxinano oluhambelanayo lwe-79.1% esebenzisa i-slip casting kwi-2200°C, apho icandelo elinqamlezileyo libonisa isakhiwo esincinci esenziwe ngeenkozo ezirhabaxa kunye neembobo. Emva koko, uYi nabanye basebenzise i-gel casting ukulungiselela imizimba eluhlaza baza bayitshiza kwi-2450°C, bafumana ii-RSiC ceramics ezinoxinano olukhulu lwe-2.53 g/cm³ kunye namandla e-flexural e-55.4 MPa.
Umphezulu wokuqhekeka kwe-SEM we-RSiC
Xa kuthelekiswa ne-dense SiC, i-RSiC inoxinano oluphantsi (malunga ne-2.5 g/cm³) kwaye i-open porosity emalunga ne-20%, nto leyo ethintela ukusebenza kwayo kwizicelo ezinamandla aphezulu. Ke ngoko, ukuphucula uxinano kunye neempawu zoomatshini ze-RSiC kube yinto ephambili kuphando. USung nabanye bacebise ukungena kwe-silicon enyibilikisiweyo kwi-carbon/β-SiC mixed compacts kunye nokuyifaka kwakhona kwi-2200°C, bakha ngempumelelo isakhiwo senethiwekhi esenziwe ngeenkozo ezirhabaxa ze-α-SiC. I-RSiC ephumezileyo ifumene uxinano lwe-2.7 g/cm³ kunye namandla e-flexural e-134 MPa, igcina uzinzo oluhle kakhulu loomatshini kubushushu obuphezulu.
Ukuphucula uxinano ngakumbi, uGuo nabanye basebenzise itekhnoloji yokungena kwepolymer kunye ne-pyrolysis (PIP) kwiindlela ezininzi zokunyanga i-RSiC. Besebenzisa izisombululo ze-PCS/xylene kunye ne-SiC/PCS/xylene slurries njenge-infiltrants, emva kwemijikelo ye-PIP emi-3-6, uxinano lwe-RSiC luphuculwe kakhulu (ukuya kuthi ga kwi-2.90 g/cm³), kunye namandla ayo e-flexural. Ukongeza, bacebise icebo elijikelezayo elidibanisa i-PIP kunye ne-recrystallization: i-pyrolysis kwi-1400°C ilandelwe yi-recrystallization kwi-2400°C, isusa ngempumelelo ii-particle blockages kwaye inciphise i-porosity. Izinto ze-RSiC zokugqibela zifumene uxinano lwe-2.99 g/cm³ kunye namandla e-flexural e-162.3 MPa, ebonisa ukusebenza okugqwesileyo okubanzi.
Imifanekiso ye-SEM yokuguquka kwesakhiwo se-microstructure se-RSiC epholisiweyo emva kwemijikelo ye-polymer impregnation kunye ne-pyrolysis (PIP)-recrystallization: I-RSiC yokuqala (A), emva komjikelo wokuqala we-PIP-recrystallization (B), nasemva komjikelo wesithathu (C)
II. Ukucoca ngaphandle koxinzelelo
Iiseramikhi zesilicon carbide (SiC) ezingenaxinzelelo zidla ngokulungiswa kusetyenziswa umgubo weSiC ococekileyo kakhulu, ocoliweyo kakhulu njengezinto eziluhlaza, kunye nezixa ezincinci zezinto zokuncedisa ukunyibilikisa, kwaye zitshiswe kwindawo engasebenziyo okanye kwi-vacuum kwi-1800–2150°C. Le ndlela ifanelekile ukuvelisa izinto ezinkulu zeseramikhi ezakhiwe ngendlela enzima. Nangona kunjalo, ekubeni iSiC ibotshelelwe ngokudibeneyo, i-self-diffusion coefficient yayo iphantsi kakhulu, okwenza ukuba ukuxinana kube nzima ngaphandle kwezinto zokuncedisa ukunyibilikisa.
Ngokusekelwe kwindlela yokusila, ukusila okungenaxinzelelo kunokwahlulwahlulwa kube ngamacandelo amabini: ukusila okungenaxinzelelo lwesigaba solwelo (i-PLS-SiC) kunye nokusila okungenaxinzelelo lwesimo esiqinileyo (i-PSS-SiC).
1.1 I-PLS-SiC (Ukucoca iSigaba soLwelo)
I-PLS-SiC idla ngokungcoliswa ngaphantsi kwama-2000°C ngokongeza malunga ne-10 wt.% yezinto ezinceda ekungcolisweni kwe-eutectic (ezifana ne-Al₂O₃, i-CaO, i-MgO, i-TiO₂, kunye ne-rare-earth oxides i-RE₂O₃) ukwenza isigaba solwelo, okukhuthaza ukuhlelwa kwakhona kwamasuntswana kunye nokudluliselwa kobunzima ukuze kufezekiswe uxinano. Le nkqubo ifanelekile kwiiseramikhi ze-SiC zezinga loshishino, kodwa akukho ngxelo ze-SiC ecocekileyo kakhulu efunyenwe ngokungcoliswa kwesigaba solwelo.
1.2 I-PSS-SiC (Ukucoca i-Solid-State)
I-PSS-SiC ibandakanya uxinano lwe-solid-state kumaqondo obushushu angaphezu kwe-2000°C malunga ne-1 wt.% yezongezo. Le nkqubo ixhomekeke kakhulu ekusasazekeni kweeathomu kunye nokulungiswa kwakhona kweenkozo okuqhutywa ngamaqondo obushushu aphezulu ukunciphisa amandla omphezulu kunye nokufezekisa uxinano. Inkqubo ye-BC (boron-carbon) yindibaniselwano eqhelekileyo yokongeza, enokunciphisa amandla omda weenkozo kwaye isuse i-SiO₂ kumphezulu we-SiC. Nangona kunjalo, izongezo ze-BC zendabuko zihlala zizisa ukungcola okushiyekileyo, okunciphisa ubumsulwa be-SiC.
Ngokulawula umxholo wokongeza (B 0.4 wt.%, C 1.8 wt.%) kunye nokusila kwi-2150°C kangangeeyure eziyi-0.5, kufunyenwe iiseramikhi zeSiC ezicocekileyo kakhulu ezinobumsulwa be-99.6 wt.% kunye noxinano oluhambelanayo lwe-98.4%. Isakhiwo esincinci sibonise iinkozo zekholamu (ezinye zidlula i-450 µm ubude), kunye neembobo ezincinci kwimida yeenkozo kunye namaqhekeza egrafiti ngaphakathi kweenkozo. Iiseramikhi zibonise amandla e-flexural angama-443 ± 27 MPa, i-modulus elastiki engama-420 ± 1 GPa, kunye ne-thermal expansion coefficient ye-3.84 × 10⁻⁶ K⁻¹ kububanzi bobushushu begumbi ukuya kwi-600°C, nto leyo ebonisa ukusebenza okugqwesileyo ngokubanzi.
Ulwakhiwo oluncinci lwe-PSS-SiC: (A) Umfanekiso we-SEM emva kokupholisha kunye nokukrola kwe-NaOH; (BD) Imifanekiso ye-BSD emva kokupholisha kunye nokukrola
III. Ukucofa okushushu
Ukucinezela okushushu (HP) yindlela yokunciphisa ubushushu esebenzisa ngaxeshanye uxinzelelo lobushushu kunye noxinzelelo lwe-uniaxial kwizinto zomgubo phantsi kweemeko zobushushu obuphezulu kunye noxinzelelo oluphezulu. Uxinzelelo oluphezulu luthintela kakhulu ukwakheka kweembobo kwaye luthintela ukukhula kweenkozo, ngelixa ubushushu obuphezulu bukhuthaza ukudibana kweenkozo kunye nokwakheka kwezakhiwo ezixineneyo, ekugqibeleni kuvelisa iiseramikhi zeSiC ezinoxinano oluphezulu, olucocekileyo oluphezulu. Ngenxa yendlela yokucinezela ebhekisa kwicala, le nkqubo idla ngokubangela i-anisotropy yeenkozo, ichaphazela iimpawu zoomatshini kunye nokuguguleka.
Iiceramics zeSiC ezicocekileyo kunzima ukuziqinisa ngaphandle kwezongezo, zifuna ukucutha okuphezulu kakhulu. UNadeau nabanye balungiselele ngempumelelo iSiC exineneyo ngokupheleleyo ngaphandle kwezongezo kwi-2500°C kunye ne-5000 MPa; uSun nabanye bafumene izixhobo ezinkulu ze-β-SiC ezinobunzima beVickers obufikelela kwi-41.5 GPa kwi-25 GPa kunye ne-1400°C. Besebenzisa uxinzelelo lwe-4 GPa, iiceramics zeSiC ezinobunzima obumalunga ne-98% kunye ne-99%, ubunzima be-35 GPa, kunye ne-elastic modulus ye-450 GPa zalungiswa kwi-1500°C kunye ne-1900°C, ngokulandelelana. Umgubo weSiC obukhulu be-micron kwi-5 GPa kunye ne-1500°C wavelisa iiceramics ezinobunzima be-31.3 GPa kunye nobunzima be-98.4%.
Nangona ezi ziphumo zibonisa ukuba uxinzelelo oluphezulu kakhulu lunokufezekisa uxinano olungenazo izongezo, ubunzima kunye neendleko eziphezulu zezixhobo ezifunekayo zithintela ukusetyenziswa kwemizi-mveliso. Ke ngoko, ekulungiseleleni okusebenzayo, izongezo ezilandelelanayo okanye i-powder granulation zihlala zisetyenziselwa ukwandisa amandla okuqhuba i-sintering.
Ngokongeza i-4 wt.% ye-phenolic resin njengesongezelelo kunye ne-sintering kwi-2350°C kunye ne-50 MPa, ii-ceramics ze-SiC ezinezinga lokuxinana le-92% kunye nobumsulwa be-99.998% zifunyenwe. Kusetyenziswe izixa eziphantsi zesongezelelo (i-boric acid kunye ne-D-fructose) kunye ne-sintering kwi-2050°C kunye ne-40 MPa, i-SiC ecocekileyo ephezulu ene-relative density >99.5% kunye nomxholo we-B oshiyekileyo we-556 ppm kuphela yalungiswa. Imifanekiso ye-SEM ibonise ukuba, xa kuthelekiswa neesampuli ezingenaxinzelelo, iisampuli ezicinezelweyo ezishushu zazineenkozo ezincinci, ii-pores ezimbalwa, kunye nobunzima obuphezulu. Amandla e-flexural yayiyi-453.7 ± 44.9 MPa, kwaye i-elastic modulus ifikelele kwi-444.3 ± 1.1 GPa.
Ngokwandisa ixesha lokubamba kwi-1900°C, ubungakanani bengqolowa bunyuke ukusuka kwi-1.5 μm ukuya kwi-1.8 μm, kwaye ukuhanjiswa kobushushu kuphucuke ukusuka kwi-155 ukuya kwi-167 W·m⁻¹·K⁻¹, ngelixa kuphucula ukumelana nokugqwala kweplasma.
Phantsi kweemeko ze-1850°C kunye ne-30 MPa, ukucinezela okushushu kunye nokucinezela okushushu ngokukhawuleza kwe-granulated kunye ne-annealed SiC powder kuvelise iiseramikhi ze-β-SiC ezixineneyo ngokupheleleyo ngaphandle kwezongezo, ezinobunzima be-3.2 g/cm³ kunye nobushushu bokuthambisa obuphantsi kwe-150–200°C kuneenkqubo zemveli. Iiseramikhi zibonakalise ubunzima be-2729 GPa, ubunzima bokuqhekeka obuyi-5.25–5.30 MPa·m^1/2, kunye nokumelana okuhle kakhulu kokuqhekeka (amazinga okuqhekeka angama-9.9 × 10⁻¹⁰ s⁻¹ kunye ne-3.8 × 10⁻⁹ s⁻¹ kwi-1400°C/1450°C kunye ne-100 MPa).
(A) Umfanekiso we-SEM womphezulu ocoliweyo; (B) Umfanekiso we-SEM womphezulu owaphukileyo; (C, D) Umfanekiso we-BSD womphezulu ocoliweyo
Kuphando lwe-3D lokushicilela iiceramics ze-piezoelectric, i-ceramic slurry, njengeyona nto iphambili echaphazela ukwakheka nokusebenza, iye yaba yinto ephambili ekugxilwe kuyo ngaphakathi nangaphandle. Izifundo zangoku ngokubanzi zibonisa ukuba iiparameters ezifana nobukhulu be-powder particles, i-slurry viscosity, kunye nomxholo oqinileyo zichaphazela kakhulu umgangatho wokwakheka kunye neempawu ze-piezoelectric zemveliso yokugqibela.
Uphando lufumanise ukuba ii-slurry ze-ceramic ezilungiselelwe kusetyenziswa ii-micron-, submicron-, kunye ne-nano-size barium titanate powders zibonisa umahluko omkhulu kwiinkqubo ze-stereolithography (umz., i-LCD-SLA). Njengoko ubungakanani be-particle buncipha, i-slurry viscosity iyanda kakhulu, kunye nee-nano-size powders ezivelisa ii-slurry ezine-viscosities ezifikelela kwiibhiliyoni ze-mPa·s. Ii-slurry ezinee-micron-size powders zinokwehliswa kwe-demination kunye ne-repeal ngexesha lokuprinta, ngelixa ii-submicron kunye ne-nano-size powders zibonisa ukuziphatha okuzinzileyo kokwakheka. Emva kokusila kobushushu obuphezulu, iisampulu ze-ceramic eziphumayo zifikelele kuxinano lwe-5.44 g/cm³, i-piezoelectric coefficient (d₃₃) emalunga ne-200 pC/N, kunye nezinto eziphantsi zokulahleka, ezibonisa iimpawu zokuphendula ze-electromechanical ezibalaseleyo.
Ukongeza, kwiinkqubo ze-micro-stereolithography, ukulungisa umxholo oqinileyo we-slurries yohlobo lwe-PZT (umz., i-75 wt.%) ivelise imizimba e-sintered enobunzima be-7.35 g/cm³, ifikelela kwi-piezoelectric constant ukuya kuthi ga kwi-600 pC/N phantsi kwamacandelo ombane aphantsi kwe-poling. Uphando malunga ne-micro-scale deformation consolidation luphucule kakhulu ukuchaneka kokwakheka, lwaphucula ukuchaneka kwejometri ukuya kuthi ga kwi-80%.
Olunye uphando kwi-PMN-PT piezoelectric ceramics lutyhile ukuba umxholo oqinileyo unefuthe elikhulu kwisakhiwo se-ceramic kunye neempawu zombane. Kwi-80 wt.% yomxholo oqinileyo, iimveliso ezingasemva zavela ngokulula kwi-ceramics; njengoko umxholo oqinileyo wanda ukuya kwi-82 wt.% nangaphezulu, iimveliso ezingasemva zanyamalala kancinci kancinci, kwaye isakhiwo se-ceramic saba msulwa ngakumbi, kunye nokusebenza okuphuculweyo kakhulu. Kwi-82 wt.%, ii-ceramics zibonise iimpawu zombane ezifanelekileyo: i-piezoelectric constant ye-730 pC/N, i-relative permittivity ye-7226, kunye nokulahleka kwe-dielectric ye-0.07 kuphela.
Ngamafutshane, ubungakanani beesuntswana, umxholo oqinileyo, kunye neempawu ze-rheological ze-slurries ze-ceramic azichaphazeli nje kuphela uzinzo kunye nokuchaneka kwenkqubo yokuprinta kodwa zikwamisela ngokuthe ngqo uxinano kunye nempendulo ye-piezoelectric yemizimba e-sintered, nto leyo ezenza zibe ziiparameter ezibalulekileyo zokufezekisa i-3D-printed piezoelectric ceramics esebenza kakuhle.
Inkqubo ephambili yokuprinta i-LCD-SLA 3D yeesampuli ze-BT/UV
Iimpawu zeeseramikhi ze-PMN-PT ezinomxholo owahlukileyo oqinileyo
IV. Ukuthungulwa kwePlasma yeSpark
I-Spark plasma sintering (SPS) yiteknoloji ephucukileyo yokusinta esebenzisa uxinzelelo lwamandla olushukumayo kunye nolwemishini olusetyenziswa ngaxeshanye kwiimpuphu ukuze kufezekiswe uxinano olukhawulezayo. Kule nkqubo, umbane ufudumeza ngqo isikhunta kunye nomgubo, uvelise ubushushu beJoule kunye neplasma, okwenza ukuba i-sintering isebenze kakuhle ngexesha elifutshane (ngesiqhelo kwimizuzu eli-10). Ukufudumala okukhawulezayo kukhuthaza ukusasazwa komphezulu, ngelixa ukukhutshwa kwe-spark kunceda ukususa iigesi ezifakwe emanzini kunye neengqimba ze-oxide kwiindawo zomgubo, kuphucula ukusebenza kwe-sintering. Isiphumo sokufuduka kwe-electromigration esibangelwa ziintsimi ze-electromagnetic sikwaphucula ukusasazwa kwe-athomu.
Xa kuthelekiswa noxinzelelo olushushu lwendabuko, i-SPS isebenzisa ubushushu obuthe ngqo ngakumbi, okuvumela uxinano kumaqondo obushushu aphantsi ngelixa ithintela ngempumelelo ukukhula kweenkozo ukuze kufumaneke izakhiwo ezincinci nezifanayo. Umzekelo:
- Ngaphandle kwezongezo, ukusebenzisa umgubo we-SiC ocoliweyo njengezinto eziluhlaza, ukunyibilikisa kwi-2100°C kunye ne-70 MPa imizuzu engama-30 kuvelise iisampulu ezinoxinano lwe-98%.
- Ukusila kwi-1700°C kunye ne-40 MPa kangangemizuzu eli-10 kuvelise i-cubic SiC enoxinano lwe-98% kunye nobukhulu beenkozo obuyi-30–50 nm kuphela.
- Ukusebenzisa i-80 µm granular SiC powder kunye ne-sintering kwi-1860°C kunye ne-50 MPa imizuzu emi-5 kuphumele kwi-SiC ceramics esebenza kakuhle ene-98.5% relative density, i-Vickers microhardness ye-28.5 GPa, amandla e-flexural ye-395 MPa, kunye nokuqina kwe-fracture ye-4.5 MPa·m^1/2.
Uhlalutyo lwezakhiwo ezincinci lubonise ukuba njengoko ubushushu bokuthambisa bunyuka ukusuka kwi-1600°C ukuya kwi-1860°C, ukubola kwezinto kwehla kakhulu, kusondela kuxinano olupheleleyo kumaqondo obushushu aphezulu.
Ulwakhiwo oluncinci lweeseramikhi zeSiC ezitshiswe ngamaqondo obushushu ahlukeneyo: (A) 1600°C, (B) 1700°C, (C) 1790°C kunye (D) 1860°C
V. Ukwenziwa kwezinto ezongezelelekileyo
Ukwenziwa kwezinto ezongezelelweyo (AM) kutshanje kubonakalise amandla amakhulu ekwenzeni izinto zeseramikhi ezintsonkothileyo ngenxa yenkqubo yokwakha umaleko-ngamaleko. Kwiseramikhi zeSiC, kuye kwaphuhliswa ubuchwepheshe obuninzi be-AM, kubandakanya i-binder jetting (BJ), i-3DP, i-selective laser sintering (SLS), ukubhala i-inki ngqo (DIW), kunye ne-sterolithography (SL, DLP). Nangona kunjalo, i-3DP kunye ne-DIW zinobunono obuphantsi, ngelixa i-SLS idla ngokubangela uxinzelelo lobushushu kunye nokuqhekeka. Ngokwahlukileyo koko, i-BJ kunye ne-SL zibonelela ngeenzuzo ezinkulu ekuveliseni iiseramikhi ezintsonkothileyo ezicocekileyo kakhulu nezichanekileyo.
- Ukubopha iBinder (BJ)
Itekhnoloji ye-BJ ibandakanya ukutshiza umaleko ngomaleko we-binder ukuya kwi-bond powder, kulandele ukuhluza kunye nokusila ukuze kufunyanwe imveliso yokugqibela ye-ceramic. Ukudibanisa i-BJ kunye ne-chemical vapor infiltration (CVI), ii-ceramics ze-SiC ezicocekileyo kakhulu, ezi-crystalline ngokupheleleyo zilungiselelwe ngempumelelo. Le nkqubo ibandakanya:
① Ukwenza imizimba eluhlaza yeseramikhi yeSiC kusetyenziswa i-BJ.
② Ukunciphisa nge-CVI kwi-1000°C kunye ne-200 Torr.
③ I-SiC ceramic yokugqibela yayinobunzima obuyi-2.95 g/cm³, i-thermal conductivity eyi-37 W/m·K, kunye namandla e-flexural angama-297 MPa.
Umzobo weskimu wokuprinta ijethi yokuncamathelisa (BJ). (A) Imodeli yoyilo oluncediswa yikhompyutha (CAD), (B) umzobo weskimu womgaqo we-BJ, (C) ukuprintwa kwe-SiC yi-BJ, (D) uxinano lwe-SiC ngokungena komphunga ngamakhemikhali (CVI)
- I-Stereolithography (SL)
I-SL yiteknoloji yokwenza i-ceramic esekwe kwi-UV ephilisayo enobuchule obuphezulu kakhulu kunye nobuchule bokwenza ulwakhiwo oluntsonkothileyo. Le ndlela isebenzisa i-slurries ye-ceramic ethambileyo ene-photosensitive enomxholo ophezulu oqinileyo kunye ne-viscosity ephantsi ukwenza imizimba eluhlaza ye-ceramic ye-3D ngokusebenzisa i-photopolymerization, ilandelwe yi-debinding kunye ne-high-temperature sintering ukuze kufunyanwe imveliso yokugqibela.
Kusetyenziswa i-35 vol.% SiC slurry, imizimba eluhlaza ye-3D esemgangathweni ophezulu yalungiswa phantsi kwe-405 nm UV irradiation kwaye yandiswa ngakumbi ngokutshiswa kwepolymer kwi-800°C kunye nonyango lwe-PIP. Iziphumo zibonise ukuba iisampulu ezilungiselelwe nge-35 vol.% slurry zifikelele kuxinano oluhambelanayo lwe-84.8%, ziphumelela ngaphezu kwamaqela olawulo angama-30% kunye nama-40%.
Ngokungenisa i-lipophilic SiO₂ kunye ne-phenolic epoxy resin (PEA) ukuze kutshintshwe ukutyibilika, ukusebenza kwe-photopolymerization kuphuculwe ngempumelelo. Emva kokunyibilikisa kwi-1600°C kangangeeyure ezi-4, ukuguqulwa okuphantse kube ngokupheleleyo kwi-SiC kufezekisiwe, kunye nomxholo wokugqibela weoksijini we-0.12% kuphela, okuvumela ukwenziwa kwe-SiC ceramics ecocekileyo kakhulu, eyakhiwe ngendlela enzima ngaphandle kwamanyathelo angaphambi kokufakwa okanye angaphambi kokungena.
Umzobo wesakhiwo sokuprinta kunye nenkqubo yaso yokusila. Imbonakalo yesampulu emva kokomiswa kwi-(A) 25°C, i-pyrolysis kwi-(B) 1000°C, kunye nokusila kwi-(C) 1600°C.
Ngokuyila ii-slurries ze-ceramic ze-Si₃N₄ ezithambileyo kwi-stereolithography 3D printing kunye nokusebenzisa iinkqubo zokuguga ezikhupha i-debinding-presintering kunye ne-high-temperature aging, ii-ceramics ze-Si₃N₄ ezine-93.3% theoretical density, amandla okutsalwa angama-279.8 MPa, kunye namandla okugoba angama-308.5–333.2 MPa zalungiswa. Izifundo zifumanise ukuba phantsi kweemeko zomxholo oqinileyo we-45 vol.% kunye nexesha lokuvezwa kwe-10 s, imizimba eluhlaza enomgangatho omnye ene-IT77-level curing precision inokufumaneka. Inkqubo yokukhupha i-debinding yobushushu obuphantsi enesantya sokufudumeza se-0.1 °C/min incede ukuvelisa imizimba eluhlaza engenaziqhekeko.
Ukusinta linyathelo eliphambili elichaphazela ukusebenza kokugqibela kwi-sterolithography. Uphando lubonisa ukuba ukongeza izixhobo zokusinta kunokuphucula ngempumelelo uxinano lwe-ceramic kunye neempawu zoomatshini. Ukusebenzisa i-CeO₂ njengesixhobo sokusinta kunye netekhnoloji yokusinta encediswa ngumbane ukulungiselela ii-ceramics ze-Si₃N₄ ezinoxinano oluphezulu, i-CeO₂ ifunyenwe yahlulahlula kwimida yeenkozo, ikhuthaza ukutyibilika komda weenkozo kunye noxinano. Ii-ceramics ezivelileyo zibonise ubunzima be-Vickers be-HV10/10 (1347.9 ± 2.4) kunye nokuqina kokuqhekeka kwe-(6.57 ± 0.07) MPa·m¹/². Nge-MgO–Y₂O₃ njengezongezo, i-homogeneity yesakhiwo se-ceramic iphuculwe, yaphucula kakhulu ukusebenza. Kwinqanaba elipheleleyo le-doping le-8 wt.%, amandla e-flexural kunye ne-thermal conductivity ifikelele kwi-915.54 MPa kunye ne-59.58 W·m⁻¹·K⁻¹, ngokulandelanayo.
VI. Isiphelo
Ngamafutshane, iiceramics zesilicon carbide (SiC) ezicocekileyo kakhulu, njengezixhobo zobunjineli ezibalaseleyo, zibonise amathuba amaninzi okusetyenziswa kwizixhobo ze-semiconductors, kwi-aerospace, nakwizixhobo ezikwimeko egqithisileyo. Eli phepha lihlalutye ngokucwangcisiweyo iindlela ezintlanu eziqhelekileyo zokulungiselela iiceramics zeSiC ezicocekileyo kakhulu—ukunyibilikisa ikristale kwakhona, ukunyibilikisa ngaphandle koxinzelelo, ukucinezela okushushu, ukunyibilikisa iplasma yentlantsi, kunye nokuveliswa kwezinto ezongezelelweyo—ngeengxoxo ezineenkcukacha malunga neendlela zazo zokuxinana, ukulungiswa kweeparameter eziphambili, ukusebenza kwezinto, kunye neenzuzo kunye nemida efanelekileyo.
Kuyacaca ukuba iinkqubo ezahlukeneyo nganye ineempawu ezizodwa ngokubhekiselele ekufezekiseni ubunyulu obuphezulu, uxinano oluphezulu, izakhiwo ezintsonkothileyo, kunye nokusebenza kwemizi-mveliso. Itekhnoloji yokwenziwa kwezinto ezongeziweyo, ngokukodwa, ibonakalise amandla amakhulu ekwenzeni izinto ezimile ngendlela entsonkothileyo nezilungiselelwe wena, kunye nokuphumelela kwiindawo ezincinci ezifana ne-sterolithography kunye ne-binder jetting, nto leyo eyenza ukuba ibe yindlela ebalulekileyo yophuhliso lokulungiselela i-ceramic ye-SiC ecocekileyo kakhulu.
Uphando lwexesha elizayo malunga nokulungiswa kwe-SiC ceramic ecocekileyo kakhulu kufuneka luhlolisise nzulu, lukhuthaze utshintsho ukusuka kwizicelo zobunjineli ezinkulu nezithembekileyo kakhulu zelebhu, ngaloo ndlela lubonelela ngenkxaso ebalulekileyo yezinto zokwakha izixhobo eziphezulu kunye nobuchwepheshe bolwazi besizukulwana esilandelayo.
I-XKH lishishini eliphambili eligxile kuphando kunye nokuveliswa kwezinto zeseramikhi ezisebenza kakuhle. Izinikele ekuboneleleni ngezisombululo ezenzelwe abathengi ngendlela yeseramikhi zesilicon carbide (SiC) ezicocekileyo kakhulu. Le nkampani ineetekhnoloji zokulungiselela izinto eziphambili kunye nobuchule bokucubungula obuchanekileyo. Ishishini layo liquka uphando, imveliso, ukucubungula ngokuchanekileyo, kunye nonyango lomphezulu weseramikhi zeSiC ezicocekileyo kakhulu, ukuhlangabezana neemfuno ezingqongqo ze-semiconductor, amandla amatsha, i-aerospace kunye nezinye iindawo zezinto zeseramikhi ezisebenza kakuhle. Sisebenzisa iinkqubo zokusila ezivuthiweyo kunye neetekhnoloji zokuvelisa ezongeziweyo, sinokubonelela abathengi ngenkonzo enye ukusuka ekuphuculeni ifomula yezinto, ukwakheka kwesakhiwo esintsonkothileyo ukuya ekucutshungulweni ngokuchanekileyo, ukuqinisekisa ukuba iimveliso zineempawu ezintle zoomatshini, uzinzo lobushushu kunye nokumelana nokugqwala.
Ixesha leposi: Julayi-30-2025